Gallium nitride-based active current flowback prevention
An improved current flowback prevention device that uses a Gallium Nitride (GaN) device or transistor to mitigate the effects of short circuits is described herein. For example, a GaN device may have an ideal diode-like behavior during reverse conduction. This characteristic of the GaN device can be used to protect electrical systems against short circuit incidents caused by upstream circuits or electronic components. As an illustrative example, a power regulator may be injecting current towards a direct current (DC) bus. While the power regulator is operating normally, the gate of the GaN device may be kept high to allow current to pass through the GaN device from the power regulator to the DC bus. If a short circuit event occurs, the gate of the GaN device may no longer receive a high signal and prevent current from passing through the GaN device.
1 . A system for preventing current flowback, the system comprising:
a Gallium Nitride (GaN) device comprising a source, a drain, and a gate;
electrical equipment, wherein an output of the electrical equipment is coupled to the source of the GaN device;
a latch, wherein an output of the latch is coupled to the gate of the GaN device; and
a current sense circuit, wherein an output of the current sense circuit is coupled to a first input of the latch, wherein an input of the current sense circuit is coupled to the output of the electrical equipment and the source of the GaN device, and wherein the current sense circuit is configured to:
detect a direction of current output by the electrical equipment; and
output a low signal to the first input of the latch and a high signal to a second input of the latch to cause the latch to output a second low signal that causes the GaN device to prevent a flow of current from the drain of the GaN device to the source of the GaN device in response to detecting that the direction of current output by the electrical equipment is from the source of the GaN device to the output of the electrical equipment.
2 . The system of claim 1 , further comprising a gate drive circuit, wherein the gate drive circuit is coupled between the output of the latch and the gate of the GaN device, wherein the gate drive circuit is configured to amplify the second low signal output by the latch and output the amplified second low signal to the gate of the GaN device.
3 . The system of claim 1 , wherein the second input comprises an enable input.
4 . The system of claim 1 , wherein the current sense circuit is further configured to:
detect that a second direction of the current output by the electrical equipment is from the output of the electrical equipment to the source of the GaN device at a first time before a time at which the direction of the current is detected; and
cause the latch to drive the gate of the GaN device, wherein driving the gate of the GaN device causes the GaN device to allow the current to flow from the source of the GaN device to the drain of the GaN device.
5 . The system of claim 1 , wherein the drain of the GaN device is coupled to a high voltage distribution box.
6 . The system of claim 1 , wherein the second low signal has a voltage level that falls below a threshold voltage level.
7 . The system of claim 1 , wherein the electrical equipment comprises a power regulator.
8 . The system of claim 7 , wherein the power regulator comprises a fuel cell power regulator.
9 . The system of claim 1 , wherein the system is comprised within one of a spacecraft, an automobile, a train, a plane, or a ship.
10 . A method for preventing current flowback, the method comprising:
detecting a first direction of current from a power regulator, wherein an output of the power regulator is coupled to a source of a Gallium Nitride (GaN) device;
causing a gate of the GaN device to be driven in response to detecting that the direction of current from the power regulator is in a direction of the source of the GaN device;
detecting a second direction of the current from the power regulator; and
outputting a low signal to a first input of a latch and a high signal to a second input of the latch to cause the gate of the GaN device to no longer be driven in response to detecting that the second direction of the current from the power regulator is in a direction away from the source of the GaN device.
11 . The method of claim 10 , wherein outputting a low signal to a first input of a latch and a high signal to a second input of the latch further comprises causing the latch coupled to the gate of the GaN device to output the low signal below a threshold voltage level.
12 . The method of claim 11 , wherein causing the latch coupled to the gate of the GaN device to output the low signal further comprises causing a gate drive circuit coupled between the output of the latch and the gate of the GaN device to amplify the low signal output by the latch and output the amplified low signal to the gate of the GaN device.
13 . The method of claim 10 , wherein the second input of the latch comprises an enable input.
14 . The method of claim 13 , wherein the latch is configured to output the high signal to the gate of the GaN device.
15 . The method of claim 10 , wherein a drain of the GaN device is coupled to a high voltage distribution box.
16 . The method of claim 10 , wherein the power regulator comprises a fuel cell power regulator.
17 . The method of claim 10 , wherein the power regulator and the GaN device are comprised within one of a spacecraft, an automobile, a train, a plane, or a ship.
18 . A method for preventing current flowback, the method comprising:
detecting a direction of current output by electrical equipment, wherein an output of the electrical equipment is coupled to a source of a Gallium Nitride (GaN) device;
causing a gate of the GaN device to be driven in response to detecting that the direction of the current output by the electrical equipment is in a direction of the source of the GaN device;
detecting a change in the direction of the current output by the electrical equipment; and
outputting a low signal to a first input of a latch and a high signal to a second input of the latch to cause the gate of the GaN device to no longer be driven.
19 . The method of claim 18 , wherein outputting a low signal to a first input of a latch and a high signal to a second input of the latch further comprises causing the latch coupled to the gate of the GaN device to output the low signal below a threshold voltage level.
20 . The method of claim 18 , wherein the electrical equipment and the GaN device are comprised within one of a spacecraft, an automobile, a train, a plane, or a ship.