Bulk acoustic wave device including patterned acoustic mirror layers to reduce effective thickness and related methods
In an acoustic mirror of a bulk-acoustic wave (BAW) device, acoustic energy is reflected at interfaces of layers having different acoustic impedances, and the wavelengths of the acoustic energy reflected at each layer depends on the layer thickness. The acoustic mirror comprises a patterned layer including a first region of a first material and a second region of the first material separated by a second material to reduce an effective thickness of the layer for acoustic reflection. As operating frequencies in wireless devices increase, current manufacturing practices may be unable to produce the correspondingly thinner layers of the acoustic mirror. Thus, the BAW device described herein can be employed to provide a reduced effective thickness for acoustic reflection with layers having an actual thickness that can be formed by existing manufacturing practices. In some examples, the first material and the second material have different acoustic impedances.
1 . A bulk acoustic wave (BAW) device comprising:
a piezoelectric layer;
a first electrode disposed on a first side of the piezoelectric layer;
a second electrode disposed on a second side of the piezoelectric layer; and
an acoustic mirror disposed between the second electrode and a substrate, the acoustic mirror comprising a plurality of layers comprising a first patterned layer;
wherein:
the first patterned layer comprises a first region of a first material and a second region of the first material;
the first region and the second region are discrete regions separated from each other by a second material different from the first material;
the first patterned layer comprises the first material and the second material disposed in a first area of the first patterned layer corresponding to the second electrode;
the first area extends parallel to a surface of the second electrode in a first direction and a second direction orthogonal to the first direction; and
the plurality of layers further comprising:
a first isolation layer comprising the second material disposed between the second electrode and the first patterned layer;
a substrate;
a second isolation layer comprising the second material disposed between the first patterned layer and the substrate; and
a non-patterned layer comprising a single region of the first material in the first area corresponding to the second electrode.
2 . The BAW device of claim 1 , wherein the plurality of layers further comprises a third layer comprising only the second material disposed between the first patterned layer and the non-patterned layer.
3 . The BAW device of claim 1 , wherein the plurality of layers further comprises a second patterned layer disposed between the first patterned layer and the second electrode.
4 . The BAW device of claim 3 , wherein the first patterned layer and the second patterned layer are disposed between the non-patterned layer and the second electrode.
5 . The BAW device of claim 3 , wherein the non-patterned layer is disposed between the first patterned layer and the second electrode.
6 . The BAW device of claim 1 integrated into a device selected from the group consisting of: a set-top box; an entertainment unit; a navigation device; a communications device; a fixed location data unit; a mobile location data unit; a global positioning system (GPS) device; a mobile phone; a cellular phone; a smartphone; a session initiation protocol (SIP) phone; a tablet; a phablet; a server; a computer; a portable computer; a mobile computing device; a wearable computing device; a desktop computer; a personal digital assistant (PDA); a monitor; a computer monitor; a television; a tuner; a radio; a satellite radio; a music player; a digital music player; a portable music player; a digital video player; a video player; a digital video disc (DVD) player; a portable digital video player; an automobile; a vehicle component; an avionics system; a drone; and a multicopter.
7 . A method of manufacturing a bulk acoustic wave (BAW) device, the method comprising:
forming a piezoelectric layer;
forming a first electrode on a first side of the piezoelectric layer;
forming a second electrode on a second side of the piezoelectric layer; and
forming an acoustic mirror on a surface of the second electrode, the acoustic mirror comprising a plurality of layers comprising a first patterned layer;
wherein:
the first patterned layer comprises a first region of a first material and a second region of the first material;
the first region and the second region are discrete regions separated from each other by a second material different from the first material;
the first patterned layer comprises the first material and the second material disposed in a first area of the first patterned layer corresponding to the second electrode;
the first area extends parallel to a surface of the second electrode in a first direction and a second direction orthogonal to the first direction; and
the plurality of layers further comprising:
a first isolation layer comprising the second material disposed between the second electrode and the first patterned layer;
a substrate;
a second isolation layer comprising the second material disposed between the first patterned layer and the substrate; and
a non-patterned layer comprising a single region of the first material in the first area corresponding to the second electrode.
8 . An acoustic filter package comprising:
a substrate; and
at least one bulk acoustic wave (BAW) device disposed on the substrate, the BAW device comprising:
a piezoelectric layer;
a first electrode on a first side of the piezoelectric layer;
a second electrode on a second side of the piezoelectric layer; and
an acoustic mirror on a surface of the second electrode, the acoustic mirror comprising a plurality of layers comprising a first patterned layer;
wherein:
the first patterned layer comprises a first region of a first material and a second region of the first material;
the first region and the second region are discrete regions separated from each other by a second material different from the first material;
the first patterned layer comprises the first material and the second material disposed in a first area of the first patterned layer corresponding to the second electrode;
the first area extends parallel to a surface of the second electrode in a first direction and a second direction orthogonal to the first direction; and
the plurality of layers further comprising:
a first isolation layer comprising the second material disposed between the second electrode and the first patterned layer;
a substrate;
a second isolation layer comprising the second material disposed between the first patterned layer and the substrate; and
a non-patterned layer comprising a single region of the first material in the first area corresponding to the second electrode.
9 . A bulk acoustic wave (BAW) device comprising:
a piezoelectric layer;
a first electrode disposed on a first side of the piezoelectric layer;
a second electrode disposed on a second side of the piezoelectric layer; and
an acoustic mirror disposed between the second electrode and a substrate, the acoustic mirror comprising a plurality of layers comprising a first patterned layer and a non-patterned layer;
wherein:
the first patterned layer comprises a first region of a first material and a second region of the first material;
the first region and the second region are discrete regions separated from each other by a second material different from the first material;
the first patterned layer comprises the first material and the second material disposed in a first area of the first patterned layer corresponding to the second electrode; and
the non-patterned layer comprises a single region of the first material in the first area corresponding to the second electrode.
10 . The BAW device of claim 9 , wherein the plurality of layers further comprises a first layer comprising only the second material disposed between the first patterned layer and the non-patterned layer.
11 . The BAW device of claim 9 , wherein the plurality of layers further comprises a second patterned layer disposed between the first patterned layer and the second electrode.
12 . The BAW device of claim 11 , wherein the first patterned layer and the second patterned layer are disposed between the non-patterned layer and the second electrode.
13 . The BAW device of claim 9 , wherein the non-patterned layer is disposed between the first patterned layer and the second electrode.
14 . The BAW device of claim 9 , wherein the plurality of layers further comprises:
a first isolation layer comprising the second material disposed between the second electrode and the first patterned layer; and
a substrate.
15 . The BAW device of claim 9 , wherein the plurality of layers further comprises:
a substrate; and
a second isolation layer comprising the second material disposed between the first patterned layer and the substrate.