Core shell quantum dot and electronic device including the same
A cadmium-free, core shell quantum dot, a quantum dot polymer composite, and electronic devices including the quantum dot polymer composite. The core shell quantum dot has an extinction coefficient per gram of greater than or equal to 0.3, an ultraviolet-visible absorption spectrum curve that has a positive differential coefficient value at 450 nm, wherein the core shell quantum dot includes a semiconductor nanocrystal core including indium and phosphorus, and optionally zinc, and a semiconductor nanocrystal shell disposed on the semiconductor nanocrystal core, the shell including zinc, selenium, and sulfur, wherein the core shell quantum dot has a quantum efficiency of greater than or equal to about 80%, and is configured to emit green light upon excitation.
1. A quantum dot composite comprising a polymer matrix and a core shell quantum dot in the polymer matrix, wherein the core shell quantum dot comprises a semiconductor nanocrystal core comprising indium and phosphorus, and a semiconductor nanocrystal shell disposed on the semiconductor nanocrystal core, the semiconductor nanocrystal shell comprising zinc, selenium, and sulfur,
wherein the core shell quantum dot does not comprise cadmium, and
wherein the core shell quantum dot has a mole ratio of sulfur to selenium of greater than or equal to about 0.05:1 to less than or equal to about 3.5:1, and a mole ratio of zinc to indium of greater than or equal to about 10:1 and less than or equal to about 24:1.
2. The quantum dot composite of claim 1 , wherein the core shell quantum dot has a valley depth defined by the following equation of greater than or equal to about 0.4:
1−(Abs valley /Abs first )= VD
wherein, Abs first is an absorption rate at the first absorption peak, and Abs valley is an absorption rate at the lowest point of the valley adjacent to the first absorption peak; or
wherein an ultraviolet-visible absorption spectrum curve of the core shell quantum dot has a positive differential coefficient value at 450 nanometers.
3. The quantum dot composite of claim 1 , wherein the core shell quantum dot has a mole ratio of sulfur to selenium of greater than or equal to about 0.1:1 and less than or equal to about 2.4:1; or
wherein the core shell quantum dot has a mole ratio of indium with respect to a total sum of sulfur and selenium is greater than or equal to 0.05:1 and less than or equal to 0.15:1; or
wherein the semiconductor nanocrystal core further comprises zinc.
4. The quantum dot composite of claim 1 , wherein the core shell quantum dot has a mole ratio of zinc to indium of greater than or equal to about 13:1 and less than or equal to about 18:1.
5. The quantum dot composite of claim 1 , wherein the core shell quantum dot has a mole ratio of phosphorus to indium of greater than or equal to about 0.7 and less than or equal to about 1.5:1.
6. The quantum dot composite of claim 1 , wherein the core shell quantum dot is configured to emit green light; and
wherein a maximum peak emission wavelength of the green light is greater than or equal to about 500 nanometers and less than or equal to about 530 nm.
7. The quantum dot composite of claim 1 , wherein the quantum dot has a quantum efficiency of greater than or equal to about 85%.
8. The quantum dot composite of claim 1 , wherein the shell comprises a first semiconductor nanocrystal shell disposed on the semiconductor nanocrystal core and comprising zinc, selenium, and sulfur, and a second semiconductor nanocrystal shell disposed on the first semiconductor nanocrystal shell and comprising zinc and sulfur.
9. The quantum dot composite of claim 8 , wherein in the first semiconductor nanocrystal shell, a mole ratio of sulfur to a sum of selenium and sulfur is greater than or equal to about 0.1:1 and less than or equal to about 0.7:1.
10. The quantum dot composite of claim 1 , wherein the quantum dot polymer composite has an absorption rate of greater than or equal to about 90% for blue light having a wavelength in the range of about 450 nm to about 470 nm; or
wherein the core shell quantum dot has a quantum efficiency of greater than or equal to about 80%.
11. The quantum dot composite of claim 1 , wherein the quantum dot composite has a thickness of from about 2 μm to about 3.5 μm.
12. The quantum dot composite of claim 1 , wherein the quantum dot composite has a thickness of greater than or equal to about 5 μm and less than or equal to about 30 μm.
13. A patterned film including a repeating section, wherein the repeating section includes a first section configured to emit a first light, and the first section comprises the quantum dot composite of claim 1 .
14. The patterned film of claim 13 , wherein the repeating section further comprises a second section configured to emit a second light different from the first light.
15. An electronic device comprising a core shell quantum dot,
where the core shell quantum dot comprises: a semiconductor nanocrystal core comprising indium and phosphorus, and a semiconductor nanocrystal shell disposed on the semiconductor nanocrystal core, the semiconductor nanocrystal shell comprising zinc, selenium, and sulfur,
wherein the core shell quantum dot has a mole ratio of sulfur to selenium of greater than or equal to about 0.05:1 to less than or equal to about 3.5:1, and a mole ratio of zinc to indium of greater than or equal to about 10:1 and less than or equal to about 24:1, and
wherein the core shell quantum dot does not comprise cadmium.
16. The electronic device of claim 15 , wherein the core shell quantum dot has a mole ratio of sulfur to selenium of greater than or equal to about 0.1:1 and less than or equal to about 2.4:1 and wherein the core shell quantum dot has a mole ratio of zinc to indium of greater than or equal to about 13:1 and less than or equal to about 18:1.
17. The electronic device of claim 15 , wherein the core shell quantum dot has a mole ratio of phosphorus to indium of greater than or equal to about 0.7:1 and less than or equal to about 1.5:1.
18. The electronic device of claim 15 , wherein the core shell quantum dot is configured to emit green light; and
wherein a maximum peak emission wavelength of the green light is greater than or equal to about 500 nanometers and less than or equal to about 530 nm.
19. The electronic device of claim 15 , wherein the core shell quantum dot has a quantum efficiency of greater than or equal to about 85%; or
wherein the core shell quantum dot has a valley depth defined by the following equation of greater than or equal to about 0.4:
1−(Abs valley /Abs first )= VD
wherein, Abs first is an absorption rate at the first absorption peak, and Abs valley is an absorption rate at the lowest point of the valley adjacent to the first absorption peak; or
wherein an ultraviolet-visible absorption spectrum curve of the core shell quantum dot has a positive differential coefficient value at 450 nanometers.
20. The electronic device of claim 15 , wherein the electronic device is a light emitting diode.