NANOROD LIGHT-EMITTING DEVICE, METHOD OF MANUFACTURING THE NANOROD LIGHT-EMITTING DEVICE, AND DISPLAY APPARATUS INCLUDING THE NANOROD LIGHTEMITTING DEVICE

1 . A nanorod light-emitting device comprising:

a semiconductor light-emitting structure having a nanorod shape;

a surface activation layer provided on a sidewall of the semiconductor light-emitting structure; and

an epitaxial passivation layer provided on the surface activation layer.

2 . The nanorod light-emitting device of claim 1 , wherein the surface activation layer is plasma-treated and configured to have surface roughness in a range of about 5 Å to about 50 Å.

3 . The nanorod light-emitting device of claim 1 , wherein the surface activation layer has a thickness in a range of about 1 nm to about 5 nm.

4 . The nanorod light-emitting device of claim 1 , wherein the surface activation layer comprises InGaN and AlN.

5 . The nanorod light-emitting device of claim 1 , wherein the epitaxial passivation layer has a lattice matching epitaxy relationship or a domain matching epitaxy relationship with the semiconductor light-emitting structure.

6 . The nanorod light-emitting device of claim 1 , wherein the epitaxial passivation layer comprises at least one of ZrO, SrO, MgO, BaO, CeO 2 , Gd 2 O 3 , CaO, HfO 2 , TiO 2 , AlO x , BaN, SiN, TiN, CeN, AlN, ZnSe, ZnS, AlGaN, or Al x Ga 1-x As (x≥0.9).

7 . The nanorod light-emitting device of claim 1 , wherein the epitaxial passivation layer has a thickness in a range of about 5 nm to about 20 nm.

8 . The nanorod light-emitting device of claim 1 , further comprising an amorphous passivation layer on the epitaxial passivation layer.

9 . The nanorod light-emitting device of claim 8 , wherein the amorphous passivation layer has a thickness in a range of about 20 nm to about 70 nm.

10 . The nanorod light-emitting device of claim 1 , wherein the epitaxial passivation layer is configured to have a roughness in a range of about 5 Å to about 50 Å.

11 . The nanorod light-emitting device of claim 1 , further comprising a distributed Bragg reflective layer on the epitaxial passivation layer.

12 . The nanorod light-emitting device of claim 1 , wherein the semiconductor light-emitting structure comprises:

a first semiconductor layer doped to a first conductivity type;

an emission layer provided on the first semiconductor layer; and

a second semiconductor layer provided on the emission layer and doped to a second conductivity type different from the first conductivity type.

13 . A display apparatus comprising:

a plurality of pixel electrodes;

a common electrode corresponding to the plurality of pixel electrodes; and

a plurality of nanorod light-emitting devices connected between the plurality of pixel electrodes and the common electrode,

wherein each of the plurality of nanorod light-emitting devices comprises:

a semiconductor light-emitting structure having a nanorod shape;

a surface activation layer provided on a sidewall of the semiconductor light-emitting structure; and

an epitaxial passivation layer provided on the surface activation layer.

14 . A method of manufacturing a nanorod light-emitting device, the method comprising:

forming, on a substrate, a first semiconductor layer doped to a first conductivity type;

forming an emission layer on the first semiconductor layer;

forming, on the emission layer, a second semiconductor layer doped to a second conductivity type different from the first conductivity type;

forming a plurality of semiconductor light-emitting structures by patterning the first semiconductor layer, the emission layer, and the second semiconductor layer into a plurality of nanorod shapes;

forming a surface activation layer on sidewalls of the plurality of semiconductor light-emitting structures; and

forming an epitaxial passivation layer on the surface activation layer.

15 . The method of claim 14 , wherein the forming of the surface activation layer comprises:

performing a precursor flow operation, a first purge supply operation, a reactant flow operation, and a second purge supply operation one or more times; and

performing a plasma process after performing the precursor flow operation, the first purge supply operation, the reactant flow operation, and the second purge supply operation one or more times.

16 . The method of claim 14 , wherein the performing of the plasma process uses an argon (Ar) plasma method, an N 2 plasma method, or an NH 3 plasma method.

17 . The method of claim 14 , wherein the forming of the epitaxial passivation layer comprises:

an operation of depositing a material of the epitaxial passivation layer using an atomic layer deposition method;

heating and crystallizing the deposited material of the epitaxial passivation layer; and

repeating the depositing of the material of the epitaxial passivation layer and the crystallizing of the deposited material of the epitaxial passivation layer a plurality of times.

18 . The method of claim 14 , wherein the surface activation layer has a thickness in a range of about 1 nm to about 5 nm.

19 . The method of claim 14 , wherein the surface activation layer comprises InGaN and AlN.

20 . The method of claim 17 , wherein the operation of depositing the material of the epitaxial passivation layer is performed in range of 1 to 10 times.