LIGHT-EMITTING DEVICE AND MANUFACTURING METHOD THEREOF
A light-emitting device includes a substrate comprising an upper surface, a plurality of side surfaces, and a semiconductor stack located on the upper surface. The substrate includes a hexagonal crystal structure. The plurality of side surfaces includes a first side surface. The first side surface is tilted away from a m-plane of the hexagonal crystal structure, and an acute angle is formed between the first side surface and the m-plane. The first side surface includes a first modified stripe, and the first modified stripe includes a plurality of first modified regions. A pitch is between the adjacent first modified regions, and the pitch is not less than 5 μm. The first side surface comprises a folded structure.
1 . A light-emitting device, comprising:
a substrate, comprising an upper surface and a plurality of side surfaces, wherein the plurality of side surfaces comprises a first side surface; and
a semiconductor stack located on the upper surface;
wherein the substrate comprises a hexagonal crystal structure comprising a m-plane, the first side surface is tilted away from the m-plane of the hexagonal crystal structure, and an acute angle is formed between the first side surface and the m-plane;
wherein the first side surface comprises a first modified stripe, and the first modified stripe comprises a plurality of first modified regions;
wherein a pitch is between the adjacent first modified regions, and the pitch is not less than 5 μm;
wherein the first side surface comprises a folded structure.
2 . The light-emitting device according to claim 1 , wherein from a top view, the upper surface comprises an edge and connects the first side surface by the edge, and the folded structure forms a zig-zag shape on the edge.
3 . The light-emitting device according to claim 1 , wherein the first side surface comprises a first zone located between the upper surface and the first modified stripe, and the folded structure is located in the first zone.
4 . The light-emitting device according to claim 1 , wherein the folded structure comprises a plurality of ridge portions and a plurality of valley portions, the plurality of ridge portions extends from the first modified stripe towards the upper surface.
5 . The light-emitting device according to claim 3 , wherein the first zone comprises a first root mean square slope RΔq_ 1 , the first modified stripe comprises a second root mean square slope RΔq_ 2 , and wherein RΔq_ 1 >0.5×RΔq_ 2 .
6 . The light-emitting device according to claim 5 , wherein RΔq_ 1 >RΔq_ 2 .
7 . The light-emitting device according to claim 1 , wherein the first side surface comprises a second modified stripe, and the second modified stripe comprises a plurality of second modified regions, and the first side surface comprises a second zone located between the first modified stripe and the second modified stripe.
8 . The light-emitting device according to claim 7 , wherein the folded structure is located in the second zone, the second zone comprises a third root mean square slope RΔq_ 3 and the first modified stripe comprises a second root mean square slope RΔq_ 2 , wherein RΔq_ 3 >0.5×RΔq_ 2 .
9 . The light-emitting device according to claim 1 , wherein the substrate further comprises a lower surface, and an angle formed between the lower surface and the first side surface is in a range of between 84 degrees and 96 degrees.
10 . The light-emitting device according to claim 9 , wherein the first side surface comprises a third zone located between the second modified stripe and the lower surface, and the folded structure is located in the third zone.
11 . The light-emitting device according to claim 9 , further comprising a first reflection structure adjacent to the lower surface.
12 . The light-emitting device according to claim 1 , wherein the light-emitting device comprises a first maximum luminous intensity at an angle of 0 degree to 90 degrees of a luminous intensity distribution curve measured in a far-field region, and comprises a second maximum luminous intensity at an angle of 0 degree to −90 degrees of the luminous intensity distribution curve, and the difference between the first maximum luminous intensity and the second maximum luminous intensity is lower than 5%.
13 . The light-emitting device according to claim 11 , wherein the light-emitting device comprises a lowest luminous intensity at an angle of −7.5 degrees to +7.5 degrees of the luminous intensity distribution curve.
14 . The light-emitting device according to claim 1 , further comprising a second reflection structure located on a surface of the semiconductor stack.
15 . The light-emitting device according to claim 1 , wherein the acute angle is formed between a projection of the first side surface on a c-plane of the hexagonal crystal structure and a projection of the m-plane on the c-plane, and the acute angle is in a range between 5 degrees and 25 degrees.
16 . The light-emitting device according to claim 1 , wherein the plurality of side surfaces comprises a second side surface, the second side surface is opposite to the first side surface, and an acute angle formed between a projection of the second side surface on a c-plane of the hexagonal crystal structure and a projection of the m-plane on the c-plane is in a range between 5 degrees and 25 degrees.
17 . The light-emitting device according to claim 1 , wherein the plurality of side surfaces comprises a third side surface, the third side surface comprises a third modified stripe, and the third modified stripe comprises a plurality of third modified regions, wherein the third side surface comprises a folded structure.
18 . The light-emitting device according to claim 17 , wherein the third modified stripe does not connect to the first modified stripe.
19 . The light-emitting device according to claim 1 , wherein the pitch of the adjacent first modified regions is in a range between 8 μm and 20 μm.