IP Library Granted Patent US 12,327,023
Granted Patent B2
US 12,327,023 · App. 18/426,234 · Granted Jun 10, 2025

System and method for stream based data placement on hybrid SSD

Inventors: Jingpei Yang (San Jose, CA); Jing Yang (San Jose, CA); Rekha Pitchumani (Oak Hill, VA); YangSeok Ki (Palo Alto, CA)
Assignee: Samsung Electronics Co., Ltd.
G06F3/0613G06F3/0655G06F3/0679
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Quick Facts
Patent No.
US 12,327,023
App. No.
18/426,234
Granted
Jun 10, 2025
Kind
B2
Abstract

A multi-stream solid-state device (SSD) includes a normal-access memory associated with a first stream ID, a high-access memory having a higher endurance than the normal-access memory and being associated with a second stream ID, a controller processor, and a processor memory coupled to the controller processor, wherein the processor memory has stored thereon instructions that, when executed by the controller processor, cause the controller processor to perform identifying a data stream ID of an input data stream as one of the first and second stream IDs, in response to identifying the data stream ID as the first stream ID, storing the input data stream in the normal-access memory, and in response to identifying the data stream ID as the second stream ID, storing the input data stream in the high-access memory.

Claims (39)

1. A solid-state device (SSD) comprising:

a first memory;

a second memory separate from the first memory;

a controller processor; and

a processor memory coupled to the controller processor, wherein the processor memory has stored thereon instructions that, based on being executed by the controller processor, cause the controller processor to perform:

migrating first data from the second memory to the first memory; and

promoting the migrated first data from the first memory to the second memory based on determining, based on the migrated first data being stored in the first memory, that a used capacity of the second memory is less than a promotion threshold.

2. The SSD of claim 1 , wherein the second memory has a memory cell architecture different from that of the first memory.

3. The SSD of claim 2 , wherein the second memory comprises a single-level cell (SLC) NAND flash memory, and

wherein the first memory comprises at least one of a multi-level cell (MLC) NAND flash memory, a tri-level cell (TLC) NAND flash memory, or a quad-level cell (QLC) NAND flash memory.

4. The SSD of claim 1 , wherein the second memory supports higher input/output operations per second (IOPS) than the first memory.

5. The SSD of claim 1 , wherein the first memory comprises a first type of memory, the second memory comprises a second type of memory, and the SSD is configured to use firmware to determine the first and second types of memory.

6. The SSD of claim 5 , wherein the second memory has a higher input/output priority than the first memory.

7. The SSD of claim 5 , wherein the second memory has higher overprovisioning capacity than the first memory.

8. The SSD of claim 1 , wherein the instructions further cause the controller processor to perform:

migrating second data from the second memory to the first memory based on determining that a data temperature of the second memory is less than a first temperature threshold; and

promoting the migrated second data from the first memory to the second memory based on determining, based on the second data being stored in the first memory, that the data temperature of the second memory is greater than a second temperature threshold.

9. The SSD of claim 1 , wherein the instructions cause the controller processor to migrate the first data from the second memory to the first memory based on determining that the used capacity of the second memory is greater than a migration threshold.

10. A method of processing data in a solid-state device (SSD), the method comprising:

migrating first data from a second memory of the SSD to a first memory of the SSD separate from the second memory; and

promoting the migrated first data from the first memory to the second memory based on determining, based on the migrated first data being stored in the first memory, that a used capacity of the second memory is less than a promotion threshold.

11. The method of claim 10 , wherein the second memory has a memory cell architecture different from that of the first memory.

12. The method of claim 10 , wherein the second memory supports higher input/output operations per second (IOPS) than the first memory.

13. The method of claim 10 , wherein the first memory comprises a first type of memory, the second memory comprises a second type of memory, and the SSD is configured to use firmware to determine the first and second types of memory.

14. The method of claim 10 , further comprising:

migrating second data from the second memory to the first memory based on determining that a data temperature of the second memory is less than a first temperature threshold; and

promoting the second migrated data from the first memory to the second memory based on determining, based on the migrated second data being stored in the first memory, that the data temperature is greater than a second temperature threshold.

15. The method of claim 10 , wherein the first data is migrated from the second memory to the first memory based on determining that the used capacity of the second memory is greater than a migration threshold.

16. A solid-state device (SSD) comprising:

a first memory;

a second memory separate from the first memory;

a controller processor; and

a processor memory coupled to the controller processor, wherein the processor memory has stored thereon instructions that, based on being executed by the controller processor, cause the controller processor to perform:

migrating first data from the second memory to the first memory; and

promoting the migrated first data from the first memory to the second memory based on determining, based on the migrated first data being stored in the first memory, that a data temperature of the second memory is greater than a first temperature threshold.

17. The SSD of claim 16 , wherein monitoring the data temperature of the second memory comprises determining the data temperature based on an input/output (I/O) frequency of the second memory.

18. The SSD of claim 16 , wherein the second memory has a memory cell architecture different from that of the first memory.

19. The SSD of claim 16 , wherein the first memory comprises a first type of memory, the second memory comprises a second type of memory, and the SSD is configured to use firmware to determine the first and second types of memory.

20. The SSD of claim 16 , wherein the instructions cause the controller processor to migrate the first data from the second memory to the first memory based on determining that the data temperature of the second memory is less than a second data temperature.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Feb 12, 2024
From: YANG, JINGPEI; YANG, JING; PITCHUMANI, REKHA
To: SAMSUNG ELECTRONICS CO., LTD.
Reel/Frame 066440/0794 →
Continuity (3)
Continuation 17120068 · Dec 11, 2020
Provisional Application 63116740 · Nov 20, 2020
Related Publication 20240168646A1 · May 23, 2024
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