PEROVSKITE BATTERY, METHOD FOR PREPARING SAME, AND PHOTOVOLTAIC MODULE CONTAINING SAME

1 . A perovskite battery, comprising:

a first electrode;

a second electrode;

a perovskite layer, located between the first electrode and the second electrode;

an organic hole transport layer, located between the first electrode and the perovskite layer; and

an inorganic hole transport layer, located between the organic hole transport layer and the perovskite layer,

wherein,

a thickness H 1 of the inorganic hole transport layer and a thickness H 2 of the organic hole transport layer satisfy H 1 /H 2 ≤0.4; and

the inorganic hole transport layer comprises an inorganic hole transport material, and the inorganic hole transport material is selected from inorganic P-type semiconductor materials that are soluble in N,N-dimethylformamide under a room temperature at a solubility lower than 0.10 mg/mL.

2 . The perovskite battery according to claim 1 , wherein a thickness H 1 of the inorganic hole transport layer and a thickness H 2 of the organic hole transport layer satisfy 0.1≤H 1 /H 2 ≤0.4.

3 . The perovskite battery according to claim 1 , wherein the thickness H 1 of the inorganic hole transport layer is less than or equal to 10 nm.

4 . The perovskite battery according to claim 1 , wherein the thickness H 2 of the organic hole transport layer is 10 nm to 30 nm.

5 . The perovskite battery according to any one of claim 1 , wherein H 1 +H 2 ≤30 nm.

6 . The perovskite battery according to claim 1 , wherein the thickness H 1 of the inorganic hole transport layer, the thickness H 2 of the organic hole transport layer, and a thickness H 3 of the perovskite layer satisfy (H 1 +H 2 )/H 3 ≤1/20.

7 . The perovskite battery according to claim 1 , wherein the inorganic P-type semiconductor materials comprise at least one of a material represented by a structural formula MN x or a material obtained by doping same; in the structural formula, M is at least one of Cu, Ni, Mo, Co, Cr, Sn, Mn, W, or V.

8 . The perovskite battery according to claim 1 , wherein, a conduction band minimum of the inorganic P-type semiconductor materials is greater than or equal to −3.9 eV, and a valence band maximum falls between −5.4 eV and −5.1 eV.

9 . The perovskite battery according to claim 1 , wherein the organic hole transport layer comprises an organic hole transport material, and the organic hole transport material is at least one selected from poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine], poly(3-hexylthiophene), triptycene-cored triphenylamine, 3,4-ethylenedioxythiophene-methoxytriphenylamine, N-(4-aniline)carbazole-spirobifluorene, poly(3,4-ethylenedioxythiophene):polystyrene sulfonic acid, polythiophene, a derivative of any one thereof, and a material obtained by doping any one thereof.

10 . The perovskite battery according to claim 1 , wherein the perovskite layer comprises a perovskite material; and optionally, the perovskite material is at least one selected from an inorganic halide perovskite material, an organic halide perovskite material, and an organic-inorganic hybrid halide perovskite material.

11 . The perovskite battery according to claim 1 , wherein

a material of the first electrode comprises a transparent metal conductive oxide; and/or

a material of the second electrode comprises at least one of carbon, gold, silver, aluminum, copper, fluorine-doped tin oxide, indium-doped tin oxide, aluminum-doped zinc oxide, boron-doped zinc oxide, or indium-doped zinc oxide.

12 . The perovskite battery according to claim 1 , wherein the perovskite battery further comprises an electron transport layer located between the perovskite layer and the second electrode.

13 . A method for preparing a perovskite battery, comprising at least steps of: forming an organic hole transport layer on a first electrode, forming an inorganic hole transport layer on the organic hole transport layer, and forming a perovskite layer on the inorganic hole transport layer,

wherein,

a thickness H 1 of the inorganic hole transport layer and a thickness H 2 of the organic hole transport layer satisfy H 1 /H 2 ≤0.4, and optionally 0.1≤H 1 /H 2 ≤0.4; and

the inorganic hole transport layer comprises an inorganic hole transport material, and the inorganic hole transport material is selected from inorganic P-type semiconductor materials that are soluble in N,N-dimethylformamide under a room temperature at a solubility lower than 0.10 mg/mL.

14 . The method according to claim 13 , wherein the thickness H 1 of the inorganic hole transport layer is less than or equal to 10 nm, and optionally, 2 nm≤H 1 ≤8 nm.

15 . The method according to claim 13 , wherein the thickness H 2 of the organic hole transport layer is 10 nm to 30 nm.

16 . The method according to claim 13 , wherein H 1 +H 2 ≤30 nm.

17 . The method according to claim 13 , wherein the thickness H 1 of the inorganic hole transport layer, the thickness H 2 of the organic hole transport layer, and a thickness H 3 of the perovskite layer satisfy (H 1 +H 2 )/H 3 ≤1/20, and optionally, 1/50≤(H 1 +H 2 )/H 3 ≤1/20.

18 . The method according to claim 13 , wherein the inorganic P-type semiconductor materials comprise at least one of a material represented by a structural formula MN x or a material obtained by doping same; in the structural formula, M is at least one of Cu, Ni, Mo, Co, Cr, Sn, Mn, W, or V.

19 . The method according to claim 13 , wherein, a conduction band minimum of the inorganic P-type semiconductor materials is greater than or equal to −3.9 eV, and a valence band maximum falls between −5.4 eV and −5.1 eV.

20 . A photovoltaic module, comprising the perovskite battery according to claim 1 .