Memory cell
A memory cell includes first, second, and third semiconductor regions laterally bounded by insulated conductive walls; a first insulating layer overlaying the first, second, and third semiconductor regions; and a second conductive layer disposed facing a part of each of first, second, and third semiconductor regions. A first top part of the first semiconductor region is first conductivity type doped and faces the second conductive layer. The second semiconductor region includes second top parts forming a transistor with the first insulating layer and second conductive layer. A third top part of the third semiconductor region is second conductivity type doped and faces the second conductive layer. To program the memory cell, an electrical field is applied between the first semiconductor region and the second conductive layer and electrical field is applied between the third semiconductor region and the second conductive layer.
1 . A method for using a programmable memory cell, wherein the programmable memory cell comprises: first, second, and third semiconductor regions laterally bounded by insulated conductive walls, a first insulating layer overlaying the first, second, and third semiconductor regions and a second conductive layer disposed facing a part of each of the first, second, and third semiconductor regions, a first top part of the first semiconductor region doped of a first conductivity type and disposed facing the second conductive layer, the second semiconductor region comprising second top parts, the second top parts forming a transistor with the first insulating layer and second conductive layer, a third top part of the third semiconductor region doped of a second conductivity type and disposed facing the second conductive layer, wherein the second conductivity type is opposite the first conductivity type, the method comprising:
programming a first value into the programmable memory cell by applying an electrical field comprised between 5 MV/cm and 10 MV/cm between the first semiconductor region and the second conductive layer; and
programming a second value into the programmable memory cell by applying an electrical field comprised between 5 MV/cm and 10 MV/cm between the third semiconductor region and the second conductive layer.
2 . The method according to claim 1 , wherein the transistor is a MOSFET transistor.
3 . The method according to claim 1 , wherein the first conductivity type is P type and the second conductivity type is N type.
4 . The method according to claim 1 , wherein programming the first value of the programmable memory cell comprises applying a positive voltage to the first semiconductor region and wherein programming the second value of the programmable memory cell comprises applying a negative voltage to the third semiconductor region.
5 . The method according to claim 1 , wherein programming the first value of the programmable memory cell comprises the following steps:
causing the second and third semiconductor regions to be floating; and
applying a positive voltage to the first semiconductor region so that said electrical field comprised between 5 MV/cm and 10 MV/cm is generated.
6 . The method according to claim 5 , wherein the generated electrical field is equal to 7 MV/cm.
7 . The method according to claim 1 , wherein programming the second value of the programmable memory cell comprises the following steps:
causing the first and second semiconductor regions to be floating;
applying a negative voltage to the third semiconductor region so that said electrical field comprised between 5 MV/cm and 10 MV/cm is generated.
8 . The method according to claim 7 , wherein the generated electrical field is equal to 7 MV/cm.
9 . The method according to claim 1 , wherein the first semiconductor region and the first insulating layer and the second conductive layer form a first capacitor with a capacitive coupling ratio comprised between 0.2 and 0.5, and wherein the third semiconductor region and the first insulating layer and the second conductive layer form a second capacitor with a capacitive coupling ratio comprised between 0.2 and 0.5.
10 . The method according to claim 1 , wherein the first, second, and third semiconductor regions extend from a semiconductor region doped of the second conductivity type and insulated from a substrate doped of the second conductivity type by a buried well doped of the first conductivity type.
11 . The method according to claim 1 , wherein the second conductive layer is made of polysilicon.
12 . The method according to claim 1 , wherein each insulated conductive wall comprises an insulating envelope and a core made of polysilicon.
13 . The method according to claim 1 , further comprising sensing the programmable memory cell by:
applying a positive voltage between conduction terminals of the transistor;
applying a null voltage to the first and third semiconductor regions; and
measuring a current flowing through the transistor.
14 . A programmable memory cell, comprising:
first, second, and third semiconductor regions laterally bounded by insulated conductive walls;
a first insulating layer overlaying the first, second, and third semiconductor regions; and
a second conductive layer disposed facing a part of each of the first, second, and third semiconductor regions;
wherein a first top part of the first semiconductor region is doped of a first conductivity type and disposed facing the second conductive layer;
wherein the second semiconductor region comprises second top parts, the second top parts forming a transistor with the first insulating layer and second conductive layer;
wherein a third top part of the third semiconductor region is doped of a second conductivity type and disposed facing the second conductive layer; and
wherein the second conductivity type is opposite the first conductivity type.
15 . The programmable memory cell according to claim 14 , configured to:
program a first value in the programmable memory cell in response to application of an electrical field comprised between 5 MV/cm and 10 MV/cm between the first semiconductor region and the second conductive layer; and
program a second value in the programmable memory cell in response to application of an electrical field comprised between 5 MV/cm and 10 MV/cm between the third semiconductor region and the second conductive layer.
16 . The programmable memory cell according to claim 15 , wherein the first value is programmed by:
causing the second and third semiconductor regions to be floating; and
applying a positive voltage to the first semiconductor region so that the electrical field comprised between 5 MV/cm and 10 MV/cm is generated.
17 . The programmable memory cell according to claim 16 , wherein the generated electrical field is equal to 7 MV/cm.
18 . The programmable memory cell according to claim 15 , wherein the second value is programmed by:
causing the first and second semiconductor regions to be floating; and
applying a negative voltage to the third semiconductor region so that the electrical field comprised between 5 MV/cm and 10 MV/cm is generated.
19 . The programmable memory cell according to claim 18 , wherein the generated electrical field is equal to 7 MV/cm.
20 . The programmable memory cell according to claim 14 , wherein the transistor is a MOSFET transistor.
21 . The programmable memory cell according to claim 14 , wherein the first conductivity type is P type and the second conductivity type is N type.
22 . The programmable memory cell according to claim 14 , wherein the first semiconductor region and the first insulating layer and the second conductive layer form a first capacitor with a capacitive coupling ratio comprised between 0.2 and 0.5, and wherein the third semiconductor region and the first insulating layer and the second conductive layer form a second capacitor with a capacitive coupling ratio comprised between 0.2 and 0.5.
23 . The programmable memory cell according to claim 14 , wherein the first, second, and third semiconductor regions extend from a semiconductor region doped of the second conductivity type and insulated from a substrate doped of the second conductivity type by a buried well doped of the first conductivity type.
24 . The programmable memory cell according to claim 14 , wherein the second conductive layer is made of polysilicon.
25 . The programmable memory cell according to claim 14 , wherein each insulated conductive wall comprises an insulating envelope and a core made of polysilicon.
26 . The programmable memory cell according to claim 14 , configured to sense the programmable memory cell by:
applying a positive voltage between conduction terminals of the transistor;
applying a null voltage to the first and third semiconductor regions; and
measuring a current flowing through the transistor.
27 . The programmable memory cell according to claim 14 , configured to:
program the first value of the programmable memory cell by applying a positive voltage to the first semiconductor region; and
configured to program the second value of the programmable memory cell by applying a negative voltage to the third semiconductor region.