Light-emitting diode for generating a multi-peak broadband blue-violet light spectrum

1 . A light-emitting diode for plant illumination, the light-emitting diode having a multiple quantum well structure for generating a light beam with a broadband blue-violet light spectrum, wherein the broadband blue-violet light spectrum has a first peak and a second peak within a range from 410 nm to 450 nm, a wavelength value of the second peak is greater than a wavelength value of the first peak, and a difference between the wavelength value of the second peak and the wavelength value of the first peak ranges from 5 nm to 30 nm.

2 . The light-emitting diode according to claim 1 , wherein the light beam emitted by the light-emitting diode has a photosynthetic photon efficacy (PPE) greater than 2.0 μmol/j within a blue-violet wavelength band under operating current densities of 60 mA/mm2 and 120 mA/mm2.

3 . The light-emitting diode according to claim 1 , wherein a ratio of an intensity of the first peak to an intensity of the second peak ranges from 40% to 150%.

4 . The light-emitting diode according to claim 1 , wherein the broadband blue-violet light spectrum also has a second shoulder peak within a wavelength range from 430 nm to 480 nm, and a wavelength value of the second shoulder peak is greater than the wavelength value of the second peak, and a difference between the wavelength value of the second shoulder peak and the wavelength value of the second peak ranges from 5 to 30 nm; wherein a ratio of an intensity of the second shoulder peak to the intensity of the second peak is greater than 20% but less than 100%.

5 . The light-emitting diode according to claim 1 , wherein the broadband blue-violet light spectrum also has a first shoulder peak within a wavelength range from 380 nm to 420 nm, a wavelength value of the first shoulder peak is smaller than the wavelength value of the first peak, and a difference between the wavelength value of the first shoulder peak and the wavelength value of the first peak ranges from 0 to 20 nm; wherein a ratio of an intensity of the first shoulder peak to the intensity of the first peak is greater than 10% but less than 100%.

6 . The light-emitting diode according to claim 1 , wherein the multiple quantum well structure includes m well layers and m+1 barrier layers that are alternately stacked, the multiple quantum well structure is disposed between a P-type semiconductor layer and an N-type semiconductor layer and includes a plurality of second well layers and a plurality of third well layers, wherein the indium concentration of the third well layer is greater than the indium concentration of the second well layer.

7 . The light-emitting diode according to claim 6 , wherein the multiple quantum well structure further includes at least one fourth well layer, the indium concentration of the fourth well layer is greater than the indium concentration of the third well layers; and wherein the multiple quantum well structure also includes at least one first well layer, the indium concentration of the at least one first well layer is smaller than the indium concentration of the second well layer.

8 . The light-emitting diode according to claim 7 , wherein at least a first one of the well layers closest to the P-type semiconductor layer is the first well layer, at least two of the well layers that are located at a center of the multiple quantum well structure and close to the P-type semiconductor layer are the second well layers, at least two of the well layers located at a center of the light-emitting stack and close to the N-type semiconductor layer are the third well layers, and at least a first one of the well layers closest to the N-type semiconductor layer is the fourth well layer.

9 . The light-emitting diode according to claim 8 , wherein one of the second well layers is located between two of the third well layers.

10 . The light-emitting diode according to claim 6 , wherein the multiple quantum well structure further includes a plurality of barrier layers that are arranged alternately with the well layers, wherein a material of at least one of the barrier layers includes aluminum gallium nitride.