Granted Patent B2

US 12,570,929 · App. 18/457,365 · Granted Mar 10, 2026

Inventor: Hiroyuki Tano (Tokyo, JP)

Assignee: JSR Corporation

C11D3/3707B08B3/10C11D3/201C11D3/2068C11D3/26C11D3/28C11D7/261C11D7/263C11D7/3209C11D7/3218H01L21/0206H01L21/02074C11D2111/22H01L21/30604

Abstract

Claims (48)

1 . A composition for semiconductor processing comprising:

(A) a compound represented by the following general formula (1);

(B) a compound represented by the following general formula (2);

(C) a compound having at least one functional group selected from the group consisting of an amino group and a salt thereof, excluding a compound having a carboxyl group and a nitrogen-containing heterocyclic compound; and

(D) a liquid medium,

wherein, a content of the (A) component is indicated by M A [mass %] and a content of the (B) component is indicated by M B [mass %], and M A /M B is 1.0×10 2 to 1.0×10 6 ,

RO(CH 2 ) 2 O(CH 2 ) 2 OH  (1)

ROH  (2)

and

in the formula (1) and the formula (2), each R represents the same hydrocarbon group which is an alkyl group having from 1 to 4 carbon atoms.

2 . The composition for semiconductor processing according to claim 1 ,

wherein the (C) component is at least one selected from the group consisting of methanolamine, ethanolamine, isopropanolamine and diethylethanolamine.

3 . The composition for semiconductor processing according to claim 1 ,

wherein the (D) component is an aqueous medium.

4 . The composition for semiconductor processing according to claim 1 , further comprising:

a nitrogen-containing heterocyclic compound.

5 . A processing method comprising:

a step of processing a semiconductor substrate comprising contacting the composition for semiconductor processing according to claim 1 with the substrate.

6 . A processing method comprising:

a step of processing a semiconductor substrate comprising contacting the composition for semiconductor processing according to claim 2 with the substrate.

7 . A processing method comprising:

a step of processing a semiconductor substrate comprising contacting the composition for semiconductor processing according to claim 3 with the substrate.

8 . A processing method comprising:

a step of processing a semiconductor substrate comprising contacting the composition for semiconductor processing according to claim 4 with the substrate.

9 . A processing method comprising:

a step of supplying the composition for semiconductor processing according to claim 1 having a temperature of 25° C. or higher and 65° C. or lower

while a semiconductor substrate is rotated at 300 rpm or faster and 1000 rpm or slower

at a supply rate of the composition for semiconductor processing of 500 mL/minute or faster and 1500 mL/minute or slower

for a supply time of the composition for semiconductor processing of 30 seconds or longer and 300 seconds or shorter

to be brought into contact with the semiconductor substrate.

10 . A processing method comprising:

a step of supplying the composition for semiconductor processing according to claim 2 having a temperature of 25° C. or higher and 65° C. or lower

while a semiconductor substrate is rotated at 300 rpm or faster and 1000 rpm or slower

at a supply rate of the composition for semiconductor processing of 500 mL/minute or faster and 1500 mL/minute or slower

for a supply time of the composition for semiconductor processing of 30 seconds or longer and 300 seconds or shorter

to be brought into contact with the semiconductor substrate.

11 . A processing method comprising:

a step of supplying the composition for semiconductor processing according to claim 3 having a temperature of 25° C. or higher and 65° C. or lower

while a semiconductor substrate is rotated at 300 rpm or faster and 1000 rpm or slower

at a supply rate of the composition for semiconductor processing of 500 mL/minute or faster and 1500 mL/minute or slower

for a supply time of the composition for semiconductor processing of 30 seconds or longer and 300 seconds or shorter

to be brought into contact with the semiconductor substrate.

12 . A processing method comprising:

a step of supplying the composition for semiconductor processing according to claim 4 having a temperature of 25° C. or higher and 65° C. or lower

while a semiconductor substrate is rotated at 300 rpm or faster and 1000 rpm or slower

at a supply rate of the composition for semiconductor processing of 500 mL/minute or faster and 1500 mL/minute or slower

for a supply time of the composition for semiconductor processing of 30 seconds or longer and 300 seconds or shorter

to be brought into contact with the semiconductor substrate.

Assignments (2)

Priority Claims (1)

Continuity (1)

References Cited (11)