Bulk acoustic wave devices having electrodes with acoustic impedance gradients to improve coupling efficiency and related fabrication methods
BAW devices include a piezoelectric layer with a first electrode layer on one face and a second electrode layer on the opposite face. The piezoelectric layer and electrode layers determine a coupling efficiency of the BAW devices, which is a measure of the acoustic response of the piezoelectric layer to an input signal. In a BAW device, a first side of the first electrode layer comprises a first material adjacent to a first face of the piezoelectric layer, and a second side of the first electrode layer, opposite to the first face of the piezoelectric layer, comprises a second material, where the first material and the second material have different acoustic impedances. An electrode layer with an acoustic impedance gradient increases the coupling efficiency of the BAW devices.
1 . A bulk acoustic wave (BAW) device, comprising:
a piezoelectric layer;
a first electrode layer on a first face of the piezoelectric layer; and
a second electrode layer on a second face of the piezoelectric layer,
wherein:
the first electrode layer comprises:
a first side comprising a first material adjacent to the first face of the piezoelectric layer; and
a second side comprising a second material opposite to the first face of the piezoelectric layer;
the first material comprises a first acoustic impedance;
the second material comprises a second acoustic impedance different than the first acoustic impedance; and
from the first side to the second side of the first electrode layer, an acoustic impedance of the first electrode layer changes continuously from the first acoustic impedance to the second acoustic impedance.
2 . The BAW device of claim 1 , wherein the second electrode layer comprises the first material, the second material, and a third material between the first material and the second material, wherein the third material comprises a third acoustic impedance between the first acoustic impedance and the second acoustic impedance.
3 . The BAW device of claim 2 , wherein:
the first material comprises a first conductive material;
the second material comprises a second conductive material; and
the third material comprises a third conductive material different than the first conductive material and the second conductive material.
4 . The BAW device of claim 3 , wherein the third conductive material is in direct contact with the first conductive material and the second conductive material.
5 . The BAW device of claim 1 , wherein:
the first material comprises a first conductive material; and
the second material comprises a second conductive material.
6 . The BAW device of claim 5 , wherein:
the first conductive material is in direct contact with the second conductive material.
7 . The BAW device of claim 5 , wherein:
the first material comprises less than five percent (5%) of the second conductive material; and
the second material comprises less than five percent (5%) of the first conductive material.
8 . The BAW device of claim 1 , wherein the second electrode layer comprises a first layer and a second layer, wherein:
the first layer is between the second layer and the piezoelectric layer;
the first layer comprises:
the first material on a first side of the second electrode layer adjacent to the second face of the piezoelectric layer; and
the second material disposed on the first material; and
the second layer comprises:
the first material disposed on the second material of the first layer; and
the second material on a second side of the second electrode layer.
9 . The BAW device of claim 8 , wherein:
the first layer further comprises:
a third material between the first material and the second material of the first layer; and
the second layer further comprises:
the third material between the first material and the second material of the second layer.
10 . The BAW device of claim 8 , wherein in the first layer and the second layer:
the first material comprises more than ninety-five percent (95%) of a first conductive material and less than five percent (5%) of a second conductive material; and
the second material comprises more than ninety-five percent (95%) of the second conductive material and less than five percent (5%) of the first conductive material.
11 . The BAW device of claim 1 , wherein the second electrode layer comprises:
a first sub-layer comprising a layer of the first material disposed on the piezoelectric layer;
a second sub-layer comprising a layer of the second material disposed on the first sub-layer; and
a third sub-layer comprising a layer of a third material disposed on the second sub-layer.
12 . The BAW device of claim 11 , wherein:
the first material comprises a first conductive material;
the second material comprises a second conductive material; and
the third material comprises the first conductive material and the second conductive material.
13 . The BAW device of claim 1 , wherein:
the first material comprises a first percentage of a first conductive material and a second percentage of a second conductive material;
the second material comprises a third percentage of the first conductive material and a fourth percentage of the second conductive material; and
the first percentage is different than the third percentage.
14 . The BAW device of claim 13 , wherein:
between the first side and the second side, the first electrode layer comprises a fifth percentage of the first conductive material and a sixth percentage of the second conductive material; and
the fifth percentage is between the first percentage and the third percentage.
15 . The BAW device of claim 1 , wherein the second acoustic impedance is greater than the first acoustic impedance.
16 . The BAW device of claim 1 , wherein the first acoustic impedance is greater than the second acoustic impedance.
17 . The BAW device of claim 1 , wherein from a first side to a second side of the second electrode layer, an acoustic impedance of the second electrode layer comprises at least one discontinuous change.
18 . The BAW device of claim 1 , wherein the second electrode layer comprises:
a third side comprising a fourth material adjacent to the second face of the piezoelectric layer; and
a fourth side comprising a fifth material opposite to the second face of the piezoelectric layer.
19 . The BAW device of claim 1 integrated into a semiconductor die.
20 . The BAW device of claim 1 integrated into a device selected from the group consisting of: a set-top box; an entertainment unit; a navigation device; a communications device; a fixed location data unit; a mobile location data unit; a global positioning system (GPS) device; a mobile phone; a cellular phone; a smartphone; a session initiation protocol (SIP) phone; a tablet; a phablet; a server; a computer; a portable computer; a mobile computing device; a wearable computing device; a desktop computer; a personal digital assistant (PDA); a monitor; a computer monitor; a television; a tuner; a radio; a satellite radio; a music player; a digital music player; a portable music player; a digital video player; a video player; a digital video disc (DVD) player; a portable digital video player; an automobile; a vehicle component; avionics systems; a drone; and a multicopter.
21 . The BAW device of claim 1 , wherein an acoustic impedance of the second electrode layer comprises at least one discontinuous change.
22 . The BAW device of claim 1 , wherein an acoustic impedance of the second electrode layer changes continuously from a first side of the second electrode layer to a second side of the second electrode layer.
23 . A bulk acoustic wave (BAW) device, comprising:
a piezoelectric layer;
a first electrode layer on a first face of the piezoelectric layer; and
a second electrode layer on a second face of the piezoelectric layer,
wherein:
the first electrode layer comprises:
a first side comprising a first material adjacent to the first face of the piezoelectric layer; and
a second side comprising a second material opposite to the first face of the piezoelectric layer;
the first material comprises a first acoustic impedance;
the second material comprises a second acoustic impedance different than the first acoustic impedance;
the first electrode layer comprises a first layer and a second layer;
the first layer is between the second layer and the piezoelectric layer;
the first layer comprises:
the first material on the first side adjacent to the first face of the piezoelectric layer; and
the second material disposed on the first material;
the second layer comprises:
the first material disposed on the second material of the first layer; and
the second material on the second side;
an acoustic impedance of the first layer comprises at least one discontinuous change; and
an acoustic impedance of the second layer changes continuously.
24 . A bulk acoustic wave (BAW) device, comprising:
a piezoelectric layer;
a first electrode layer on a first face of the piezoelectric layer; and
a second electrode layer on a second face of the piezoelectric layer,
wherein:
the first electrode layer comprises:
a first side comprising a first material adjacent to the first face of the piezoelectric layer; and
a second side comprising a second material opposite to the first face of the piezoelectric layer;
the first material comprises a first acoustic impedance;
the second material comprises a second acoustic impedance different than the first acoustic impedance;
the first electrode layer comprises a first layer and a second layer;
the first layer is between the second layer and the piezoelectric layer;
the first layer comprises:
the first material on the first side adjacent to the first face of the piezoelectric layer; and
the second material disposed on the first material;
the second layer comprises:
the first material disposed on the second material of the first layer; and
the second material on the second side;
an acoustic impedance of the first layer changes continuously; and
an acoustic impedance of the second layer comprises at least one discontinuous change.
25 . A method of making a bulk acoustic wave (BAW) device, the method comprising:
forming a piezoelectric layer;
forming a second electrode layer on a second face of the piezoelectric layer; and
forming a first electrode layer on a first face of the piezoelectric layer,
wherein:
the first electrode layer comprises:
a first material on a first side of the first electrode layer adjacent to the first face of the piezoelectric layer; and
a second material on a second side of the first electrode layer opposite to the first face of the piezoelectric layer;
the first material comprises a first acoustic impedance;
the second material comprises a second acoustic impedance different than the first acoustic impedance; and
from the first side to the second side of the first electrode layer, an acoustic impedance of the first electrode layer changes continuously from the first acoustic impedance to the second acoustic impedance.