SINTERED BODY AND PARTS INCLUDING SAME
The sintered body including boron carbide, wherein the sintered body includes a zone, in which a volume ratio of grains having a grain size of greater than 30 μm and 60 μm or less is in a range of 50% to 70% based on a total volume of grains, as observed on a surface of the sintered body, is disclosed.
1 . A sintered body comprising boron carbide, wherein the sintered body comprises a zone, in which a volume ratio of grains having a grain size of greater than 30 μm and 60 μm or less is in a range of 50% to 70% based on a total volume of grains, as observed on a surface of the sintered body.
2 . The sintered body of claim 1 , wherein a volume ratio of the grains having a grain size of 10 μm or less is in a range of 0.01% to 1% based on the total volume of grains.
3 . The sintered body of claim 1 , wherein a volume ratio of the grains having a grain size of greater than 60 μm and 80 μm or less is in a range of 12% to 20% based on the total volume of grains.
4 . The sintered body of claim 1 , wherein the sintered body has an average grain size of 30 μm to 70 μm.
5 . The sintered body of claim 1 , wherein the sintered body has a boron and carbon content of 97% by weight or more based on a total weight of the sintered body.
6 . The sintered body of claim 1 , wherein the sintered body has an etching rate of 1.8% or less, as measured according to the following Equation 1 under plasma etching conditions, where a chamber pressure is 100 mTorr, a plasma power is 800 W, an exposure time is 300 minutes, a CF 4 gas flow rate is 50 sccm, an Ar gas flow rate is 100 sccm, and an O 2 gas flow rate is 20 sccm in the chamber:
Etching Rate={(Thickness before etching−Thickness after etching)/(Thickness after etching)}×100% [Equation 1]
7 . The sintered body of claim 1 , wherein the sintered body has a thermal conductivity at 25° C. of 23 W/mK or more and 42 W/mK or less.
8 . A sintered body comprising boron carbide, wherein the sintered body has a carbon content of 30% by weight to 43% by weight based on the total weight of the sintered body, as measured by X-ray fluorescence spectrometry.
9 . The sintered body of claim 8 , wherein the sintered body has an oxygen content of 0.1% by weight to 0.9% by weight based on the total weight of the sintered body, as measured by X-ray fluorescence spectrometry.
10 . The sintered body of claim 8 , wherein the sintered body has a silicon content of 0.05% by weight to 0.5% by weight based on the total weight of the sintered body, as measured by X-ray fluorescence spectrometry.
11 . The sintered body of claim 8 , wherein the sintered body has a boron and carbon content of 97% by weight or more.
12 . The sintered body of claim 8 , wherein the sintered body has an etching rate of 1.8% or less, as measured according to the following Equation 1 under plasma etching conditions, where a chamber pressure is 100 mTorr, a plasma power is 800 W, an exposure time is 300 minutes, a CF 4 gas flow rate is 50 sccm, an Ar gas flow rate is 100 sccm, and an O 2 gas flow rate is 20 sccm in the chamber:
Etching Rate={(Thickness before etching−Thickness after etching)/(Thickness after etching)}×100% [Equation 1]
13 . The sintered body of claim 8 , wherein the sintered body has a thermal conductivity at 25° C. of 23 W/mK or more and 42 W/mK or less.
14 . A method of manufacturing a sintered body comprising:
thermally treating a molded body, which is manufactured by molding a raw material composition, at a temperature of 500° C. to 1,000° C., to prepare a carbonized molded body;
thermally treating the carbonized molded body at a temperature of 2,100° C. to 2,300° C. to prepare a first sintered molded body; and
thermally treating the first sintered molded body at a temperature of 2,200° C. to 2,320° C. to prepare a second sintered molded body,
wherein the raw material composition comprises boron carbide, a carbon-based material, and a sinterability enhancer.
15 . The method of claim 14 , wherein the raw material composition comprises raw material granules obtained by spray drying a raw material slurry comprising boron carbide, a carbon-based material, a sinterability enhancer, and a solvent.
16 . The method of claim 14 , wherein the first sintered molded body and the second sintered molded body are prepared by sintering at a pressure of 0.2 MPa or less.
17 . The method of claim 14 , wherein the first sintered molded body is prepared by sintering for 0.5 hours to 2 hours.
18 . The method of claim 14 , wherein the second sintered molded body is prepared by sintering for 1 hour to 3 hours.
19 . A part included in a plasma processing apparatus, wherein the part comprises the sintered body of claim 1 .
20 . A part included in a plasma processing apparatus, wherein the part comprises the sintered body of claim 8 .