Electronic device
The electronic device includes a first substrate, a second substrate, a first support member, a planarization layer, and an alignment layer. The second substrate is opposite to the first substrate. The first support member is disposed in the peripheral region and located between the first substrate and the second substrate. The planarization layer is disposed on the first substrate and has a first portion and an opening. The first portion is disposed between the opening, and the first support member and the first portion are overlapped in a normal direction of the first substrate. The alignment layer is disposed on the planarization layer. The alignment layer on the first portion has a first thickness. The alignment layer in the opening has a second thickness. The first thickness is greater than or equal to zero and less than the second thickness.
1. An electronic device comprising:
a first substrate;
an active device disposed on the first substrate and comprising a gate and a semiconductor layer;
a first conductive element disposed on the first substrate, wherein the first conductive element is a same layer of the gate of the active device;
a first support member disposed on the first substrate, wherein the first support member overlaps the first conductive element;
a second conductive element disposed on the first substrate;
a second support member overlapping the second conductive element; and
a package element disposed on the first substrate, wherein in a cross-sectional view of the electronic device, at least a portion of the first support member and at least a portion of the second support member are laterally surrounded by the package element and at least a portion of the package element is disposed between the first support member and the second support member, and wherein in a top view of the electronic device, the first conductive element and the second conductive element extend in a same direction, and the semiconductor layer is between the first conductive element and the second conductive element.
2. The electronic device as claimed in claim 1 , wherein the first conductive element is adjacent to the gate and spaced apart from the gate by a gap.
3. The electronic device as claimed in claim 1 , wherein in the top view, the gate is located between the first conductive element and the second conductive element and the second conductive element is the same layer of the gate of the active device.
4. The electronic device as claimed in claim 1 , wherein the semiconductor includes metal oxide.
5. The electronic device as claimed in claim 1 , wherein a width of the second support member is the same as a width of the first support member.
6. The electronic device as claimed in claim 1 , wherein in the top view of the electronic device, the package element overlaps the semiconductor layer, the first conductive element and the second conductive element.