HIGH POWER LASER ARRAY DEVICES AND METHODS
In one example, an optoelectronic assembly may include a laser array, an amplifier array, and a multimode interference coupler optically coupling the laser array and the amplifier array. The laser array may include at least one primary laser and at least one spare laser configured to be activated if the primary laser fails. The amplifier array may include at least two amplifiers configured to amplify optical signals received from the laser array.
1 - 4 . (canceled)
5 . A method of manufacturing an optoelectronic assembly, the method comprising:
forming a multimode interference coupler, wherein forming the multimode interference coupler comprises:
depositing a quantum well and barrier layer on a substrate; and
annealing the quantum well and barrier layer to form a multimode interference region between other regions of the quantum well and barrier layer, the multimode interference region having a band gap that is different from the band gap of the other regions of the quantum well and barrier layer; and
providing a laser array on the substrate including optically coupling the laser array and the multimode interference coupler.
6 . The method of claim 5 , further comprising selecting, before forming the multimode interference coupler, a range of wavelengths of laser light to be emitted by the laser array,
wherein the multimode interference region is configured to absorb less of the range of wavelengths of laser light than the other regions of the quantum well and barrier layer.
7 . The method of claim 6 , wherein the multimode interference region is transparent to the range of wavelengths of the laser light.
8 . The method of claim 5 , wherein forming the multimode interference coupler further comprises depositing a buffer layer on the quantum well and barrier layer before annealing the quantum well and barrier layer.
9 . The method of claim 8 , wherein forming the multimode interference coupler further comprises depositing a cap layer on the buffer layer before annealing the quantum well and barrier layer.
10 . The method of claim 9 , wherein forming the multimode interference coupler further comprises directing ions at the buffer layer after depositing the cap layer and before annealing the quantum well and barrier layer.
11 . The method of claim 10 , wherein the cap layer is deposited on the buffer layer above the other regions of the quantum well and barrier layer and the buffer layer comprises an exposed surface without the cap layer deposited thereon.
12 . The method of claim 11 , wherein the cap layer comprises silicon nitride.
13 . The method of claim 11 , wherein the multimode interference region formed during the annealing of the quantum well and barrier layer is directly below the exposed surface of the buffer layer.
14 . The method of claim 10 , wherein the ions comprise phosphorus ions.
15 . The method of claim 10 , wherein forming the multimode interference coupler further comprises removing the cap layer from the buffer layer after annealing the quantum well and barrier layer.
16 . The method of claim 15 , wherein forming the multimode interference coupler further comprises removing the buffer layer after annealing the quantum well and barrier layer and after removing the cap.
17 . The method of claim 5 , wherein annealing the quantum well and barrier layer forms a spot size converter region.
18 . The method of claim 10 , further comprising providing an amplifier array on the substrate including optically coupling the amplifier array to an outlet of the multimode interference coupler.
19 . The method of claim 18 , further comprising:
optically coupling a lens array to the amplifier array;
optically coupling a fiber array to the lens array; and
optically coupling an isolator to and between the lens array and the fiber array.
20 . The method of claim 19 , wherein the isolator is configured to allow unidirectional travel of laser light from the lens array to the fiber array.
21 . The method of claim 5 , wherein annealing the quantum well and barrier layer to form a multimode interference region between other regions of the quantum well and barrier layer causes diffusion of vacancies in the quantum well and barrier layer.
22 . A method of manufacturing an optoelectronic assembly, the method comprising:
forming a multimode interference coupler, wherein forming the multimode interference coupler comprises:
depositing a quantum well and barrier layer on a substrate;
depositing a first mask on the quantum well and barrier layer;
depositing a second mask on first areas of the first mask without depositing the second mask on second areas of the first mask;
etching through the second areas of the first mask to remove portions of the first mask and portions of the quantum well and barrier layer below the second areas of the first mask;
growing butt joints in spaces of the quantum well and barrier layer exposed during the etching; and
removing the first mask and the second mask; and
providing a laser array on the substrate including optically coupling the laser array and the multimode interference coupler.