LIGHT-EMITTING DEVICE

1 . A light-emitting device, comprising:

a light-emitting unit; and

a light-conversion structure disposed on the light-emitting unit;

wherein the light-conversion structure comprising:

a quantum dot layer, wherein the quantum dot layer has surfaces; and

an etching blocking layer disposed on one of the surfaces of the quantum dot layer.

2 . The light-emitting device of claim 1 , wherein the etching blocking layer includes an inorganic transparent insulating material.

3 . The light-emitting device of claim 2 , wherein the etching blocking layer includes silicon dioxide.

4 . The light-emitting device of claim 1 , wherein the etching blocking layer includes a transparent insulating layer.

5 . The light-emitting device of claim 1 , wherein an edge of the quantum dot layer is aligned with an edge of the etching blocking layer.

6 . The light-emitting device of claim 1 , further comprising a transparent protective layer disposed on the other surface of the quantum dot layer.

7 . The light-emitting device of claim 1 , further comprising an adhesive layer disposed between the light-emitting unit and the light-conversion structure.

8 . The light-emitting device of claim 7 , wherein an edge of the light-conversion structure is aligned with an edge of the adhesive layer.

9 . The light-emitting device of claim 1 , further comprising a covering layer surrounding the light-emitting unit.

10 . The light-emitting device of claim 9 , wherein the covering layer further includes a black matrix material.

11 . The light-emitting device of claim 1 , wherein a side wall of the quantum dot layer comprises an inclined plane.

12 . The light-emitting device of claim 1 , wherein the light-emitting unit includes a micro light-emitting diode (μLED).

13 . The light-emitting device of claim 1 , wherein the light-emitting unit emits ultraviolet light or blue light.

14 . The light-emitting device of claim 7 , the adhesive layer includes polyimide (PI), epoxy, or silicone.

15 . A method of forming light-emitting device, comprising:

providing a substrate;

forming an adhesive layer on the substrate;

forming a quantum dot layer on the adhesive layer having a plurality of surfaces;

forming an etching blocking layer disposed on one of the surfaces of the quantum dot layer;

using the etching blocking layer as a patterned mask;

performing a patterning process to form a light-conversion structure;

providing a light-emitting unit; and

transferring the light-conversion structure onto the light-emitting unit.

16 . The method of claim 15 , wherein form the etching blocking layer on the quantum dot layer by a low-temperature deposition process.

17 . The method of claim 15 , wherein transferring the light-conversion structure onto the light-emitting unit includes a laser transfer process or a stamp transfer process.

18 . The method of claim 15 , further comprising:

forming a transparent protective layer disposed on the other surface of the quantum dot layer.

19 . The method of claim 15 , wherein the etching blocking layer includes a transparent insulating layer.

20 . The method of claim 17 , wherein the energy of the laser light in the laser transfer process is greater than 0.5 millijoule per millimeter squared.