QUANTUM DOT COMPOSITE STRUCTURE AND A FORMING METHOD THEREOF
A quantum dot composite structure and a method for forming the same are provided. The quantum dot composite structure includes: a glass particle including a glass matrix and a plurality of quantum dots located in the glass matrix, wherein at least one of the plurality of quantum dots includes an exposed surface in the glass matrix; and an inorganic protective layer disposed on the glass particle and covering the exposed surface.
1 . A quantum dot composite structure, comprising:
a glass particle including a glass matrix and a plurality of quantum dots located in the glass matrix, wherein at least one of the plurality of quantum dots includes an exposed surface in the glass matrix; and
an inorganic protective layer disposed on the glass particle and covering the exposed surface.
2 . The quantum dot composite structure as claimed in claim 1 , wherein a thickness of the inorganic protective layer is greater than or equal to 1 nm and less than or equal to 500 nm.
3 . The quantum dot composite structure as claimed in claim 1 , wherein the inorganic protective layer comprises inorganic oxide.
4 . The quantum dot composite structure as claimed in claim 1 , wherein the glass matrix comprises phosphosilicate glass, tellurite glass, borosilicate glass, borogermanate glass or combinations thereof.
5 . The quantum dot composite structure as claimed in claim 1 , wherein the inorganic protective layer comprises:
a first protective layer covering the glass particle and directly contacting the exposed surface; and
a second protective layer disposed on the first protective layer, wherein the first protective layer is located between the glass particle and the second protective layer.
6 . The quantum dot composite structure as claimed in claim 5 , wherein a thickness of the first protective layer is less than that of the second protective layer.
7 . The quantum dot composite structure as claimed in claim 5 , wherein a density of the first protective layer is larger than that of the second protective layer.
8 . The quantum dot composite structure as claimed in claim 5 , wherein the first protective layer comprises a plurality of sublayers.
9 . The quantum dot composite structure as claimed in claim 5 , wherein a shape of the first protective layer is conformal to that of the glass particle.
10 . The quantum dot composite structure as claimed in claim 5 , wherein the first protective layer is an inorganic oxide layer formed by an atomic layer deposition process and the second protective layer is an inorganic oxide layer formed by a sol-gel process.
11 . The quantum dot composite structure as claimed in claim 1 , wherein an emission wavelength of the plurality of quantum dots is larger than or equals to 300 nm and less than or equals to 800 nm.
12 . A method of forming a quantum dot composite structure, comprising:
providing a glass particle comprising a plurality of quantum dots;
forming a first protective layer on the glass particle by an atomic layer deposition (ALD) process to make the first protective layer cover the glass particle conformally; and
forming a second protective layer on the first protective layer by a sol-gel process to make the second protective layer cover the first protective layer.
13 . The method as claimed in claim 12 , wherein a reaction temperature of the ALD process and the sol-gel process is larger than or equals to 60° C. and less than or equals to 180° C.
14 . The method as claimed in claim 13 , wherein tris(dimethylamino)silane and ozone react at a temperature greater than or equal to 75° C. and less than or equal to 90° C. to form the first protective layer during the ALD process.
15 . The method as claimed in claim 13 , wherein azobisisobutyronitrile (AIBN) is used as an initiator to make polydimethylsiloxane (PDMS), tetraethoxysilane (TEOS), and dibutyltin dilaurate (DBTL) react at a temperature greater than or equal to 75° C. and less than or equal to 90° C. to form the second protective layer during the sol-gel process.
16 . The method as claimed in claim 12 , wherein the step of providing the glass particle further comprises:
forming a glass bulk by a melt-quench process;
performing a grinding process to break the glass bulk into the glass particles; and
performing a particle size screening process to select the glass particles with an average diameter greater than or equal to 20 μm and less than or equal to 50 μm.
17 . The method as claimed in claim 12 , wherein a thickness of the first protective layer is less than that of the second protective layer.
18 . The method as claimed in claim 12 , wherein a total thickness of the first protective layer and the second protective layer is less than or equal to 500 nm.
19 . The method as claimed in claim 12 , wherein a density of the first protective layer is larger than that of the second protective layer.
20 . The method as claimed in claim 12 , wherein the step of forming the first protective layer comprises forming a plurality of sublayers.