ISOLATION OF P-GAN HEMT BY USE OF GATE RING
A process for forming a high electron mobility transistor (HEMT) includes forming a semiconductor heterostructure including a channel layer of the HEMT, forming a gate layer of GaN on the channel layer, and patterning the gate layer to form a first gate finger, a second gate finger, and a gate arc connecting the first gate finger and the second gate finger. The process includes forming an isolation mask covering an active region of the semiconductor heterostructure and the gate arc and performing an ion bombardment process on an inactive region of the semiconductor heterostructure exposed by the isolation mask.
1 . A method, comprising:
forming a semiconductor heterostructure including a channel layer of a high electron mobility transistor (HEMT);
forming a gate layer of GaN on the channel layer;
patterning the gate layer to form a first gate finger, a second gate finger, and a gate arc connecting the first gate finger and the second gate finger;
forming an isolation mask covering an active region of the semiconductor heterostructure and the gate arc; and
performing an ion bombardment process on an inactive region of the semiconductor heterostructure exposed by the isolation mask.
2 . The method of claim 1 , comprising forming a source region positioned between the first gate finger and the second gate finger and in contact with the channel layer in the active region.
3 . The method of claim 2 , wherein the source region contacts a portion of the channel layer outside of the active region.
4 . The method of claim 2 , wherein the first and second gate fingers extend in a first direction, wherein the isolation mask has a substantially straight edge extending in a second direction transverse to the first direction past the first gate finger, the second gate finger, and the gate arc.
5 . The method of claim 2 , wherein the first and second gate fingers extend in a first direction, wherein an edge of the isolation mask has a first portion that is arced in a shape of an outer edge of the gate arc adjacent to the gate arc.
6 . The method of claim 5 , wherein the edge of the isolation mask has a second portion that is straight and extends in a second direction transverse to the first direction and connects to the first portion.
7 . The method of claim 2 , comprising:
removing the isolation mask after performing the ion bombardment process; and
forming the source region after removing the isolation mask.
8 . The method of claim 7 , comprising forming a drain region in contact with the channel region in a same process that forms the source region.
9 . The method of claim 1 , wherein the ion bombardment process includes implanting nitrogen ions in the inactive region.
10 . The method of claim 1 , comprising doping the gate layer with p-type dopants.
11 . The method of claim 1 , wherein the channel region includes AlGaN.
12 . A device, comprising:
a semiconductor heterostructure including an active region and an inactive region and having a channel layer of a high electron mobility transistor (HEMT);
a gate layer of GaN on the channel layer and including a first gate finger, a second gate finger, and a gate arc connecting the first gate finger and the second gate finger;
a source region between the first gate finger and the second gate finger and in contact with the channel layer between, wherein the channel layer has a higher concentration of an isolation dopant species in the inactive region than in the active region, wherein an entirety of the gate arc is directly above the active region.
13 . The device of claim 12 , wherein the first and second gate fingers extend in a first direction, wherein a boundary between the active region and the inactive region has a substantially straight edge extending in a second direction transverse to the first direction past the first gate finger, the second gate finger, and the gate arc.
14 . The device of claim 12 , wherein the first and second gate fingers extend in a first direction, wherein a boundary between the active region and the inactive region has a first portion that is arced in a shape of an outer edge of the gate arc adjacent to the gate arc.
15 . The device of claim 14 , wherein the boundary between the active region and the inactive region has a second portion that is straight and extends in a second direction transverse to the first direction and connects to the first portion.
16 . The device of claim 12 , comprising a drain region of the HEMT in contact with the channel region in the inactive region and in the active region.
17 . The device of claim 16 , wherein the drain region has a substantially straight edge, wherein the source region has a semicircular edge.
18 . A method, comprising:
forming a semiconductor heterostructure including a channel layer of AlGaN of a high electron mobility transistor (HEMT);
forming a gate layer of GaN on the channel layer;
patterning the gate layer to form a first gate finger extending in a first direction, a second gate finger extending the first direction, and a gate arc connecting the first gate finger and the second gate finger;
forming an isolation mask covering an active region of the semiconductor heterostructure and the gate arc and having a substantially straight edge adjacent to the gate arc and at least 500 nm away from the first gate finger and the second gate finger; and
defining an inactive region of the semiconductor heterostructure laterally outside the isolation mask by performing an ion bombardment process in a present of the isolation mask.
19 . The method of claim 18 , wherein the ion bombardment process implants nitrogen atoms in the inactive region of the semiconductor heterostructure.
20 . The method of claim 19 , comprising:
removing the isolation mask;
forming a source region of the HEMT between the first and second gate fingers and in contact with the channel layer only at the active region; and
forming a drain region of the HEMT in contact with the channel layer at the active region and the inactive region.