Method for wavelength control of silicon photonic external cavity tunable laser
A tunable solid state laser device are described comprising a semiconductor based gain chip and a silicon photonic filter chip with tuning capability. The silicon photonic filter chip can comprises an input-output silicon waveguide, at least two ring resonators formed with silicon waveguides, one or more connecting silicon waveguides interfacing with the ring resonators, a separate heater associated with each ring resonator, a temperature sensor configured to measure the chip temperature, and a controller connected to the temperature sensor and the separate heaters and programmed with a feedback loop to maintain the filter temperature to provide the tuned frequency. The one or more connecting silicon waveguides are configured to redirect light resonant with each of the at least two ring resonators back through the input-output silicon waveguide. Corresponding methods are described for the control of the laser frequency. Improved structures of the SiPho multiple filter chip involve a Zagnac interferometer.
1. An optical chip comprising:
an input waveguide;
a Sagnac interferometer optically connected to the input waveguide, comprising:
at least two waveguide branches, and
at least two ring resonators each coupled to a separate waveguide branch;
at least two resistance heaters, each associated with one of the at least two ring resonators; and
at least two resistance temperature sensors, each associated with one of the at least two resistance heaters,
wherein a controller is connected to receive a signal from each of the at least two resistance temperature sensors to account for one or more temperature measurements in a feedback loop, and
wherein a ring resonator, of the at least two ring resonators, is associated with a thermal isolation trench such that a corresponding resistance heater, a corresponding resistance temperature sensor, and the ring resonator are within a thermally isolated region from other components of the optical chip.
2. The optical chip of claim 1 , wherein the thermal isolation trench undercuts the ring resonator and surrounds the ring resonator on a bottom and two sides of the ring resonator.
3. The optical chip of claim 1 , wherein the corresponding resistance heater is located directly above the ring resonator.
4. The optical chip of claim 3 , wherein the corresponding resistance heater is formed in a cladding layer.
5. The optical chip of claim 3 , wherein a width of the corresponding resistance heater is greater than a width of the ring resonator.
6. The optical chip of claim 1 , wherein the corresponding resistance temperature sensor is positioned laterally offset from, and in a same layer as, the corresponding resistance heater.
7. The optical chip of claim 1 , wherein the thermal isolation trench has an arcuate shape having a curvature that substantially matches a curvature of the ring resonator.
8. The optical chip of claim 1 , wherein the thermal isolation trench extends circumferentially in an arc between 30 and 90 degrees.
9. The optical chip of claim 1 , wherein the thermal isolation trench extends circumferentially in an arc of at least 340 degrees.
10. The optical chip of claim 1 , wherein the thermal isolation trench is a first thermal isolation trench,
wherein the ring resonator is associated with a second thermal isolation trench that is located within the thermally isolated region,
wherein the first thermal isolation trench has a first radius that is greater than a radius of the ring resonator, and
wherein the second thermal isolation trench has a second radius that is less than the radius of the ring resonator.
11. A tunable solid state laser device comprising:
a semiconductor-based gain chip; and
a silicon photonic filter chip with tuning capability, wherein the silicon photonic filter chip comprises:
an input waveguide;
a Sagnac interferometer optically connected to the input waveguide, comprising:
at least two waveguide branches, and
at least two ring resonators each coupled to a separate waveguide branch;
at least two resistance heaters, each associated with one of the at least two ring resonators; and
at least two resistance temperature sensors, each associated with one of the at least two resistance heaters,
wherein a controller is connected to receive a signal from each of the at least two resistance temperature sensors to account for one or more temperature measurements in a feedback loop, and
wherein a ring resonator, of the at least two ring resonators, is associated with a thermal isolation trench such that a corresponding resistance heater, a corresponding resistance temperature sensor, and the ring resonator are within a thermally isolated region from other components of the silicon photonic filter chip.
12. The tunable solid state laser device of claim 11 , wherein the thermal isolation trench undercuts the ring resonator and surrounds the ring resonator on a bottom and two sides of the ring resonator.
13. The tunable solid state laser device of claim 11 , wherein the corresponding resistance heater is located directly above the ring resonator.
14. The tunable solid state laser device of claim 13 , wherein the corresponding resistance heater is formed in a cladding layer.
15. The tunable solid state laser device of claim 13 , wherein a width of the corresponding resistance heater is greater than a width of the ring resonator.
16. The tunable solid state laser device of claim 11 , wherein the corresponding resistance temperature sensor is positioned laterally offset from, and in a same layer as, the corresponding resistance heater.
17. The tunable solid state laser device of claim 11 , wherein the thermal isolation trench has an arcuate shape having a curvature that substantially matches a curvature of the ring resonator.
18. The tunable solid state laser device of claim 11 , wherein the thermal isolation trench extends circumferentially in an arc between 30 and 90 degrees.
19. The tunable solid state laser device of claim 11 , wherein the thermal isolation trench extends circumferentially in an arc of at least 340 degrees.
20. The tunable solid state laser device of claim 11 , wherein the thermal isolation trench is a first thermal isolation trench,
wherein the ring resonator is associated with a second thermal isolation trench that is located within the thermally isolated region,
wherein the first thermal isolation trench has a first radius that is greater than a radius of the ring resonator, and
wherein the second thermal isolation trench has a second radius that is less than the radius of the ring resonator.