Photovoltaic devices and method of manufacturing
A photovoltaic device includes a substrate structure and at least one Se-containing layer, such as a CdSeTe layer. A process for manufacturing the photovoltaic device includes forming the CdSeTe layer over a substrate by at least one of sputtering, evaporation deposition, CVD, chemical bath deposition process, and vapor transport deposition process. The process can also include controlling a thickness range of the Se-containing layer.
1 . A photovoltaic device comprising:
a transparent conductive oxide (TCO) layer;
a back contact; and
an absorber layer between the TCO layer and the back contact, wherein:
the absorber layer comprises cadmium, selenium, and tellurium in a CdSe x Te 1-x compound, wherein x is less than or equal to 0.30 throughout the absorber layer;
the absorber layer has a concentration gradient of Se therein;
a concentration of Se proximate to the TCO layer is higher than a concentration of Se proximate to the back contact;
a total thickness of the absorber layer is in a range from about 1500 nm to about 4500 nm;
a value of x proximate to the TCO layer is in a range of about 0.05 to 0.30; and
the value of x is less than 0.01 at a distance from about 800 nm to about 2000 nm away from the TCO layer.
2 . The photovoltaic device of claim 1 , comprising: a buffer layer between the TCO layer and the absorber layer.
3 . The photovoltaic device of claim 2 , wherein a peak concentration of Se is located at an interface between the buffer layer and the absorber layer.
4 . The photovoltaic device of claim 3 , wherein the buffer layer comprises magnesium.
5 . The photovoltaic device of claim 3 , wherein the buffer layer comprises tin oxide.
6 . The photovoltaic device of claim 3 , wherein the buffer layer has a thickness in a range of 20 nm-60 nm.
7 . The photovoltaic device of claim 1 , wherein the absorber layer comprises a dopant.
8 . The photovoltaic device of claim 1 , wherein the back contact comprises one of: ZnTe, CdZnTe, ZnTe:Cu, or a bi-layer including a layer of ZnTe and a layer of CdZnTe.
9 . The photovoltaic device of claim 1 , further comprising a back metal electrode formed on the back contact, wherein the back metal electrode comprises MoN x .
10 . The photovoltaic device of claim 1 , wherein the back contact comprises ZnTe.
11 . A photovoltaic device comprising:
a transparent conductive oxide (TCO) layer;
a back contact layer; and
an absorber layer between the TCO layer and the back contact layer, wherein:
the absorber comprises a surface proximate to the TCO layer and a surface proximate to the back contact;
the absorber layer is p-type;
the absorber layer comprises a CdSe x Te 1-x compound, wherein x is less than or equal to 0.30 throughout the absorber layer;
the absorber layer has a concentration gradient of Se therein, wherein Se is present throughout the absorber layer; and
a peak concentration of Se, of the concentration gradient of Se, is located within the absorber layer and between the surface proximate to the TCO layer and the surface proximate to the back contact; wherein:
a total thickness of the absorber layer is in a range from about 1500 nm to about 4500 nm;
a value of x proximate to the TCO layer is in a range of about 0.05 to 0.30; and
the value of x is less than 0.01 at a distance from about 800 nm to about 2000 nm away from the TCO layer.
12 . The photovoltaic device of claim 11 , comprising: a buffer layer between the TCO layer and the absorber layer.
13 . The photovoltaic device of claim 12 , wherein the buffer layer comprises tin oxide, and the buffer layer has a thickness in a range of 20 nm-60 nm.
14 . The photovoltaic device of claim 11 , wherein the absorber layer comprises a dopant.
15 . The photovoltaic device of claim 11 , further comprising a back metal electrode formed on the back contact, wherein the back metal electrode comprises MoN x , and wherein the back contact comprises ZnTe.
16 . A method of forming a photovoltaic device comprising the steps of:
depositing a transparent conductive oxide (TCO) layer over a substrate;
depositing an absorber layer over the TCO layer, wherein the absorber layer comprises cadmium, selenium, and tellurium in a CdSe x Te 1-x compound, wherein x is less than or equal to 0.30 throughout the absorber layer; and wherein:
a concentration of Se proximate to the TCO layer is higher than a concentration of Se proximate to the back contact;
a total thickness of the absorber layer is in a range from about 1500 nm to about 4500 nm;
a value of x proximate to the TCO layer is in a range of about 0.05 to 0.30; and
the value of x is less than 0.01 at a distance from about 800 nm to about 2000 nm away from the TCO layer; and
depositing a back contact over the absorber layer, whereby the absorber layer is between the TCO layer and the back contact.
17 . The method of claim 16 , further comprising: depositing a buffer layer on the TCO layer prior to the step of depositing the absorber layer, whereby the buffer layer is between the TCO layer and the absorber layer.
18 . The method of claim 16 , wherein the absorber layer comprises a dopant.
19 . The method of claim 16 , wherein the back contact comprises ZnTe.
20 . The method of claim 16 , wherein the buffer layer comprises tin oxide.