SINTERED BODY AND COMPONENT PART INCLUDING SAME
The sintered body includes boron carbide, wherein a volume ratio of grains of the boron carbide having a grain size greater than 1 μm and less than or equal to 4 μm is 61% to 86% based on a volume ratio of total grains on a surface of the sintered body.
1 . A sintered body comprising boron carbide, wherein a volume ratio of grains of the boron carbide having a grain size greater than 1 μm and less than or equal to 4 μm is 61% to 86% based on a total volume of grains on a surface of the sintered body.
2 . The sintered body of claim 1 , wherein a carbon content of the sintered body is 18 wt % to 30 wt % based on a total weight of the sintered body according to an X-ray fluorescence analysis.
3 . The sintered body of claim 1 , wherein a porosity of the sintered body is 5 vol % or less.
4 . The sintered body of claim 1 , wherein a volume ratio of grains of the boron carbide having a grain size of 1 μm or less is in a range of 1.5% to 15% based on the total volume of grains on the surface of the sintered body.
5 . The sintered body of claim 1 , wherein a volume ratio of grains of the boron carbide having a grain size of greater than 4 μm is in a range of 7.2% to 31% based on the total volume of grains on the surface of the sintered body.
6 . The sintered body of claim 1 , wherein the sintered body has an average grain size of 2 μm to 5 μm.
7 . The sintered body of claim 1 , wherein a porosity of the sintered body is 0.5 vol % or less.
8 . The sintered body of claim 1 , wherein a content of boron and carbon is 97 wt % or more.
9 . The sintered body of claim 1 , wherein an etch rate of the sintered body according to Equation 1 below is 2% or less under plasma etching conditions, where a pressure of a chamber is 100 mTorr, a plasma power is 800 W, a plasma exposure time is 300 minutes, a flow rate of CF 4 gas in the chamber is 50 sccm, a flow rate of Ar gas is 100 sccm, and a flow rate of O 2 gas is 20 sccm:
Etch rate={(thickness of the sintered body before etching-thickness of the sintered body after etching)/(thickness of the sintered body after etching)}×100% [Equation 1]
10 . The sintered body of claim 1 , wherein the sintered body has a thermal conductivity of 18 W/mK to 33 W/mK at 25° C.
11 . A method of preparing a sintered body comprising:
charging a raw material composition in a mold, molding the raw material composition, and carbonizing the molded raw material at a temperature of 500° C. to 1000° C.;
a first sintering of performing a first thermal process at a temperature of 1900° C. to 2100° C. after the carbonizing; and
a second sintering of performing a second thermal process at a temperature of 2000° C. to 2230° C. after the first sintering.
12 . The method of claim 11 , wherein the raw material composition comprises boron carbide and a sintering enhancer.
13 . The method of claim 11 , wherein the first sintering and the second sintering are performed at a pressure of 25 MPa to 60 MPa, respectively.
14 . The method of claim 11 , wherein the raw material composition is raw material granules obtained by spray-drying a raw material slurry comprising boron carbide, a sintering enhancer, and a solvent.
15 . A component part disposed inside a plasma processing apparatus comprising the sintered body of claim 1 .