Semiconductor laser and method of production for optoelectronic semiconductor parts
In one embodiment the semiconductor laser comprises a carrier and an edge-emitting laser diode which is mounted on the carrier and which comprises an active zone for generating a laser radiation and a facet with a radiation exit region. The semiconductor laser further comprises a protective cover, preferably a lens for collimation of the laser radiation. The protective cover is fastened to the facet and to a side surface of the carrier by means of an adhesive. A mean distance between a light entrance side of the protective cover and the facet is at most 60 μm. The semiconductor laser is configured to be operated in a normal atmosphere without additional gas-tight encapsulation.
1. A semiconductor laser comprising
a carrier,
an edge-emitting laser diode which is mounted on the carrier and which has an active zone for generating laser radiation and has a facet with a radiation exit region,
a protective cover, and
an adhesive, by means of which the protective cover is fastened to the facet and to a side surface of the carrier, wherein
an average distance between a light entrance side of the protective cover and the facet is at most 15 μm, and
the semiconductor laser is configured to be operated in a normal atmosphere without additional gas-tight encapsulation,
in which the light entrance side is planar shaped and oriented inclined relative to the facet so that laser radiation reflected at the light entrance side is kept away from the radiation exit region and/or such that a resonator of the laser diode remains undisturbed by the reflected laser radiation,
wherein an angle α between the light entrance side and the facet is between 5° and 25° inclusive,
wherein a cavity is formed in the region of the active zone on the facet, said cavity is surrounded all around by the adhesive as seen in plan view of the facet, such that the radiation exit region, from which the laser radiation leaves the laser diode, is free of the adhesive,
wherein the cavity has side walls which are curved towards the adhesive such that the cavity has a biconvex shape in the radiation exit region when seen in cross-section perpendicular to the facet, and
wherein within the cross-section and starting from a maximum extent in a direction parallel to the facet, the cavity narrows in the direction towards the facet and in the direction towards the light entrance side of the protective cover.
2. The semiconductor laser according to claim 1 ,
in which the protective cover is a lens for collimation of the laser radiation and has a minimum distance from the facet of 0.1 μm.
3. The semiconductor laser according to claim 1 ,
wherein the laser radiation runs at a distance from the adhesive towards the light entrance side.
4. The semiconductor laser according to claim 1 ,
in which the protective cover comprises or consists of sapphire or SiC,
wherein a wavelength of maximum intensity of the laser radiation is between 365 nm and 530 nm inclusive.
5. The semiconductor laser according to claim 1 ,
wherein the adhesive is inorganic and comprises or consists of at least one metal and/or at least one glass.
6. The semiconductor laser according to claim 1 ,
in which the adhesive comprises or consists of a low-organic silicone, silazane and/or siloxane.
7. The semiconductor laser according to claim 1 ,
in which at least the light entrance side is provided with an anti-reflection coating for the laser radiation such that the light entrance side has a reflectivity of at most 0.5% for the laser radiation and/or such that a resonator of the laser diode remains undisturbed by the reflected laser radiation.
8. The semiconductor laser according to claim 1 ,
in which the active zone is located on a side of the laser diode facing the carrier,
wherein the facet projects beyond the carrier along a running direction of the laser radiation.