SEMICONDUCTOR NANOPARTICLE, A PRODUCTION METHOD THEREOF, AND ELECTRONIC DEVICE INCLUDING THE SAME

1 . A semiconductor nanoparticle comprising:

silver, indium, gallium, and sulfur, wherein the semiconductor nanoparticle is configured to emit blue light, and the blue light has a peak emission wavelength of greater than or equal to about 400 nanometers and less than 490 nanometers,

wherein the semiconductor nanoparticle is configured to have a quantum yield of greater than or equal to about 40% and a full width at half maximum of less than about 70 nanometers.

2 . The semiconductor nanoparticle of claim 1 , wherein the peak emission wavelength is greater than or equal to about 410 nanometers and less than or equal to about 480 nanometers.

3 . The semiconductor nanoparticle of claim 1 , wherein the semiconductor nanoparticle is configured to have a full width at half maximum of less than about 55 nm, a quantum yield of greater than or equal to about 45%, or both.

4 . The semiconductor nanoparticle of claim 1 , wherein in a photoluminescence spectrum of the semiconductor nanoparticle, a trap emission value defined by Equation 1 is less than about 0.3:

trap emission value= A 2 /A 1  Equation 1

wherein, in Equation 1,

A1 is an intensity at a peak emission wavelength, and

A2 is a maximum intensity in a tail wavelength range of the peak emission wavelength+greater than or equal to 60 nm.

5 . The semiconductor nanoparticle of claim 1 , wherein a mole ratio of gallium to a sum of indium and gallium, [Ga:(In+Ga)] is greater than or equal to about 0.85:1 and less than or equal to about 0.995:1.

6 . The semiconductor nanoparticle of claim 1 , wherein

a mole ratio of indium to sulfur [In:S] is greater than or equal to about 0.01:1, and less than or equal to about 0.08:1;

a mole ratio of silver to sulfur [Ag:S] is greater than or equal to about 0.1 and less than or equal to about 0.34:1; or

a mole ratio of gallium to sulfur (Ga:S) is greater than or equal to about 0.77:1 and less than or equal to about 2.5:1, or

any combination thereof is satisfied.

7 . The semiconductor nanoparticle of claim 1 , wherein

a mole ratio of a sum of indium and gallium to silver [(In+Ga):Ag] is greater than or equal to about 1.9:1 and less than or equal to about 7:1; or

a mole ratio of silver to a sum of silver, indium, and gallium [Ag:(Ag+In+Ga)] is greater than or equal to about 0.09:1 and less than about 0.38:1, or

a combination thereof is satisfied.

8 . The semiconductor nanoparticle of claim 1 , wherein

a mole ratio of sulfur to a sum of silver, indium, and gallium [S:(Ag+In+Ga)] is greater than or equal to about 0.7:1 and less than or equal to about 1.35:1.

9 . The semiconductor nanoparticle of claim 1 , wherein at least four of the following mole ratios is satisfied:

a mole ratio of gallium to a sum of indium and gallium, [Ga:(In+Ga)] is greater than or equal to about 0.85:1 and less than or equal to about 0.995:1.

a mole ratio of indium to sulfur [In:S] is greater than or equal to about 0.01:1, and less than or equal to about 0.08:1;

a mole ratio of silver to sulfur [Ag:S] is greater than or equal to about 0.1 and less than or equal to about 0.34:1;

a mole ratio of gallium to sulfur (Ga:S) is greater than or equal to about 0.77:1 and less than or equal to about 2.5:1,

a mole ratio of a sum of indium and gallium to silver [(In+Ga):Ag] is greater than or equal to about 1.9:1 and less than or equal to about 7:1; or

a mole ratio of silver to a sum of silver, indium, and gallium [Ag:(Ag+In+Ga)] is greater than or equal to about 0.09:1 and less than about 0.38:1.

10 . The semiconductor nanoparticle of claim 1 ,

wherein the semiconductor nanoparticle does not comprise lithium.

11 . The semiconductor nanoparticle of claim 1 ,

wherein in the semiconductor nanoparticle, an indium amount in a portion adjacent to a surface of the semiconductor nanoparticle is less than an indium amount in a central portion of the semiconductor nanoparticle.

12 . A method for producing the semiconductor nanoparticle of claim 1 , the method comprising:

heating a first reaction solution comprising a first metal precursor and a first sulfur precursor to a first reaction temperature to prepare a semiconductor nanocrystal; and

reacting a second metal precursor and a second sulfur precursor in an organic solvent in the presence of the semiconductor nanocrystal to prepare the semiconductor nanoparticle, wherein the first metal precursor comprises a first silver compound, a first gallium compound, and a first indium compound, and the second metal precursor includes a second gallium compound and, optionally, a second silver compound, and

wherein in the first reaction solution, a mole ratio of gallium to indium is greater than or equal to about 3.5:1, and the first reaction temperature is greater than or equal to about 240° C.

13 . The method of claim 12 , wherein

in the first reaction solution, a mole ratio of gallium to indium as determined from the first gallium compound and the first indium compound is greater than or equal to about 4:1 and less than or equal to about 20:1, and

a first reaction temperature is greater than or equal to about 255° C. and less than about 300° C.

14 . The method of claim 12 , wherein a photoluminescent spectrum of the semiconductor nanocrystal exhibits a first emission peak at a wavelength of less than 500 nm and a second emission peak at a wavelength of greater than 500 nm.

15 . The method of claim 12 , wherein the reacting of the second metal precursor with the second sulfur precursor comprises:

preparing a reaction medium containing the second sulfur precursor and an organic ligand in the organic solvent;

heating the reaction medium to an addition temperature;

adding the semiconductor nanocrystal and the second metal precursor to the reaction medium to obtain a reaction mixture;

heating the reaction mixture to a second reaction temperature, wherein the addition temperature is greater than or equal to about 120° C. and less than or equal to about 280° ° C., the second reaction temperature is greater than or equal to about 180° C. and less than or equal to about 380° C.

16 . An ink composition comprising a liquid vehicle, and a semiconductor nanoparticle of claim 1 .

17 . A composite comprising:

a matrix; and

the semiconductor nanoparticle of claim 1 ,

wherein the semiconductor nanoparticle is dispersed in the matrix.

18 . A device comprising:

a color conversion layer comprising a color conversion region, and optionally, partition walls defining the color conversion region,

wherein the color conversion region comprises a first region corresponding to a first pixel, and

wherein the first region comprises the composite of claim 17 .

19 . An electroluminescent device, comprising:

a first electrode and a second electrode spaced apart from each other; and

a light emitting layer between the first electrode and the second electrode;

wherein the light emitting layer comprises the semiconductor nanoparticle of claim 1 .

20 . A display device comprising the semiconductor nanoparticle of claim 1 .