Memory device and refresh controlling method thereof

1 . A memory device, comprising:

a memory cell array including a plurality of memory cells disposed in a plurality of rows;

a register configured to store row addresses corresponding to the plurality of rows and access count for the plurality of rows; and

a refresh controller configured to:

determine a refresh address based on the stored row addresses and a refresh command being received, and

change a refresh period for a target row based on the refresh address being associated with a previously performed refresh for the target row and the access count for a row corresponding to the target row being reached a threshold value,

wherein the refresh controller is configured to change the refresh period for the target row by skipping output of the refresh address, by outputting a normal refresh address, or by entering an idle state of the memory device.

2 . The memory device of claim 1 , further comprising:

a counter configured to increase a count value when a match signal is received from the refresh controller, and output a threshold signal to the refresh controller when the count value reaches the threshold value,

wherein the refresh controller is configured to output the match signal when the refresh address is associated with a previously performed refresh for the target row, and change the refresh period for the target row in response to the threshold signal being received.

3 . The memory device of claim 2 , wherein:

the refresh controller is configured to output information of the refresh address and the match signal to the counter, and

the counter is configured to store a plurality of count values corresponding to a plurality of refresh addresses, increase a first count value corresponding to the refresh address among the plurality of count values, and output the threshold signal in response to the first count value being reached the threshold value.

4 . The memory device of claim 1 , wherein the memory device is configured such that when the refresh address matches an address of a target row performed refresh immediately before, the refresh controller changes the refresh period for the target row.

5 . The memory device of claim 1 , wherein the memory device is configured such that when the refresh address is included in addresses of a plurality of target rows performed refresh previously, the refresh controller changes the refresh period for the target row.

6 . The memory device of claim 1 , wherein:

the register is configured to further store victim points of the plurality of rows determined based on the access count, and

the refresh controller is configured to determine the refresh address based on the victim points.

7 . A memory device, comprising:

a memory cell array including a plurality of memory cells disposed in a plurality of rows;

a register counter including:

a first register counter configured to store r row addresses among a plurality of row addresses corresponding to r rows among the plurality of rows and access count for the r rows, r being an integer greater than 1, and

a second register counter configured to store s row addresses among the plurality of row addresses corresponding to s rows among the plurality of rows and access count for the s rows, s being an integer greater than 1, and

the register counter configured to increase the access count based on an active command being received; and

a refresh controller configured to:

determine a refresh address based on the stored row addresses,

determine whether intensive access is performed on the r rows based on a refresh signal being received when the access count of the second register counter matches a predetermined value, and

increase a refresh period for a target row corresponding to the refresh address based on the determination that the intensive access is performed on the r rows,

wherein the refresh controller is configured to increase the refresh period for the target row in response to the access count for the r rows being reached a threshold value.

8 . The memory device of claim 7 , further comprising:

a comparator configured to output a trigger signal based on the refresh signal when the second register counter matches the predetermined value,

wherein the refresh controller is configured to increase the refresh period for the target row based on the trigger signal.

9 . The memory device of claim 8 , further comprising:

a TRR counter configured to increase a count value when the trigger signal is received from the comparator, and output a threshold signal to the refresh controller when the count value reaches a threshold value,

wherein the refresh controller is configured to increase the refresh period for the target row when the threshold signal is received.

10 . The memory device of claim 8 , wherein the comparator is configured to output the trigger signal when the access count for the s rows corresponding to the second register counter matches the predetermined value.

11 . The memory device of claim 10 , wherein the second register counter is configured to store the s row addresses and the access count for the s rows when the first register counter is full.

12 . The memory device of claim 8 , wherein:

the refresh controller is configured to perform refresh based on the refresh address when the refresh signal is received, and

the comparator is configured to determine whether a value of the second register counter matches the predetermined value when the refresh signal is received.

13 . The memory device of claim 12 , wherein the comparator is configured to determine whether the value of the second register counter matches a predetermined value when the refresh signal is a target row refresh signal.

14 . The memory device of claim 7 , wherein the refresh controller is configured to increase the refresh period for the target row by skipping output of the refresh address, by outputting a normal refresh address, or by entering an idle state of the memory device.

15 . The memory device of claim 7 , wherein:

the register counter is configured to further store victim points of the rows determined based on the access count for the rows, and

the refresh controller is configured to determine the refresh address for the target row based on the access count for the rows or the victim points of the rows, and perform refresh based on the refresh address for the target row.

16 . A refresh controlling method of a memory device including a plurality of memory cells disposed in a plurality of rows, the method comprising:

determining a refresh address when a refresh command is received;

determining whether only one row is accessed based on the refresh address;

determining whether only n, n being an integer greater than 1 or less rows are accessed based on the refresh address when it is not determined that only the one row is accessed; and

increasing a refresh period for a target row when it is determined that only the n or less rows are accessed.

17 . The method of claim 16 , wherein the determining of whether only the one row is accessed includes:

determining that only the one row is accessed when the refresh address is included m times (m is an integer greater than 1) or more in a target row refresh history.

18 . The method of claim 16 , further comprising:

storing r row addresses corresponding to r rows and access count for the r rows among the plurality of rows in a first register counter;

storing s row addresses corresponding to s rows and access count for the s rows among the plurality of rows in a second register counter,

wherein the determining of whether only n or less rows are accessed includes:

determining that only n or less rows are accessed when all values of the second register counter are ‘0’.

19 . The method of claim 16 , further comprising:

performing a refresh for the target row based on the refresh address when it is determined that more than n rows are accessed.