DISPLAY DEVICE AND MANUFACTURING METHOD THEREOF
According to one embodiment, a display device includes a lower electrode, a rib, a partition including bottom, stem and top portions, an organic layer covering the lower electrode, an upper electrode covering the organic layer and contacting the bottom portion, and a sealing layer continuously covering the partition and a thin film including the organic layer and the upper electrode. The bottom portion is formed of a molybdenum-tungsten alloy. A height from a lower surface of the bottom portion to an upper surface of the stem portion is less than or equal to 500 nm. A thickness of the sealing layer is less than or equal to 1.5 μm. A thickness of the bottom portion is greater than or equal to 50 nm.
1 . A display device comprising:
a lower electrode;
a rib comprising a pixel aperture which overlaps the lower electrode;
a partition which includes a conductive bottom portion provided on the rib, a stem portion provided on the bottom portion, and a top portion provided on the stem portion and protruding from a side surface of the stem portion;
an organic layer which covers the lower electrode through the pixel aperture and emits light based on application of voltage;
an upper electrode which covers the organic layer and is in contact with the bottom portion; and
a sealing layer which continuously covers the partition and a thin film including the organic layer and the upper electrode, wherein
the bottom portion is formed of a molybdenum-tungsten alloy,
a height from a lower surface of the bottom portion to an upper surface of the stem portion is less than or equal to 500 nm,
a thickness of the sealing layer is less than or equal to 1.5 μm, and
a thickness of the bottom portion is greater than or equal to 50 nm.
2 . The display device of claim 1 , wherein
the stem portion is formed of aluminum.
3 . The display device of claim 1 , wherein
a width of the bottom portion is equal to a width of the stem portion.
4 . The display device of claim 1 , wherein
the rib is formed of silicon oxynitride.
5 . The display device of claim 1 , wherein
the sealing layer is formed of silicon nitride.
6 . The display device of claim 1 , wherein
the thickness of the bottom portion is less than or equal to 100 nm.
7 . The display device of claim 1 , wherein
the top portion comprises a first top layer, and a second top layer provided on the first top layer.
8 . The display device of claim 7 , wherein
the first top layer is formed of titanium, and
the second top layer is formed of ITO.
9 . The display device of claim 1 , wherein
the thin film further includes an optical adjustment layer which covers the upper electrode, and
the optical adjustment layer is formed of a material which is different from the upper electrode and the sealing layer.
10 . The display device of claim 1 , wherein
the upper electrode is in contact with a side surface of the bottom portion and the side surface of the stem portion.
11 . A manufacturing method of a display device, including:
forming a lower electrode;
forming a rib which covers at least part of the lower electrode;
forming a partition on the rib, the partition including a conductive bottom portion, a stem portion located on the bottom portion and a top portion located on the stem portion;
forming an organic layer which covers the lower electrode and emits light based on application of voltage;
forming an upper electrode which covers the organic layer and is in contact with the bottom portion; and
forming a sealing layer which continuously covers the partition and a thin film including the organic layer and the upper electrode and has a thickness less than or equal to 1.5 μm, wherein
the forming the partition includes:
forming a first layer having a thickness greater than or equal to 50 nm using a molybdenum-tungsten alloy;
forming a second layer on the first layer, the second layer comprising an upper surface in which a height from a lower surface of the first layer is less than or equal to 500 nm;
forming a third layer on the second layer;
forming a resist on the third layer;
forming the top portion by removing a portion of the third layer exposed from the resist;
forming the stem portion by removing a portion of the second layer exposed from the top portion and by decreasing a width of the second layer which remains under the top portion so as to be less than a width of the top portion; and
forming the bottom portion by removing a portion of the first layer exposed from the stem portion.
12 . The manufacturing method of claim 11 , wherein
the first layer is formed by sputtering on a film formation condition which is less than or equal to 100° C.
13 . The manufacturing method of claim 11 , wherein
the second layer is formed of aluminum.
14 . The manufacturing method of claim 11 , wherein
the rib is formed of silicon oxynitride.
15 . The manufacturing method of claim 11 , wherein
the sealing layer is formed of silicon nitride.
16 . The manufacturing method of claim 11 , wherein
the first layer has a thickness which is less than or equal to 100 nm.
17 . The manufacturing method of claim 11 , wherein
the third layer comprises a first top layer, and a second top layer provide on the first top layer.
18 . The manufacturing method of claim 17 , wherein
the first top layer is formed of titanium, and
the second top layer is formed of ITO.
19 . The manufacturing method of claim 11 , wherein
the thin film further includes an optical adjustment layer which covers the upper electrode, and
the optical adjustment layer is formed of a material which is different from the upper electrode and the sealing layer.
20 . The manufacturing method of claim 11 , wherein
the upper electrode is formed so as to be in contact with a side surface of the bottom portion and a side surface of the stem portion.