DISPLAY DEVICE AND MANUFACTURING METHOD THEREOF
According to one embodiment, a display device includes a lower electrode, a rib including a pixel aperture, a partition which includes a conductive bottom portion on the rib, a stem portion on the bottom portion, and a top portion on the stem portion, an organic layer which covers the lower electrode through the pixel aperture, and an upper electrode which covers the organic layer and is in contact with the bottom portion. The bottom portion and the top portion protrude from a side surface of the stem portion. A first protrusion length of the bottom portion from the side surface is greater than or equal to 0.2 μm and less than or equal to 0.7 μm.
1 . A display device comprising:
a lower electrode;
a rib comprising a pixel aperture which overlaps the lower electrode;
a partition which includes a conductive bottom portion provided on the rib, a stem portion provided on the bottom portion, and a top portion provided on the stem portion;
an organic layer which covers the lower electrode through the pixel aperture and emits light based on application of voltage; and
an upper electrode which covers the organic layer and is in contact with the bottom portion, wherein
the bottom portion and the top portion protrude from a side surface of the stem portion, and
a first protrusion length of the bottom portion from the side surface is greater than or equal to 0.2 μm and less than or equal to 0.7 μm.
2 . The display device of claim 1 , wherein
the first protrusion length is greater than or equal to 0.3 μm and less than or equal to 0.5 μm.
3 . The display device of claim 1 , wherein
the first protrusion length is less than a second protrusion length of the top portion from the side surface.
4 . The display device of claim 1 , wherein
the bottom portion is thinner than the stem portion.
5 . The display device of claim 1 , wherein
the first protrusion length is greater than a thickness of the bottom portion.
6 . The display device of claim 1 , wherein
the bottom portion is formed of titanium nitride.
7 . The display device of claim 6 , wherein
the stem portion is formed of aluminum.
8 . The display device of claim 1 , wherein
the top portion comprises a first top layer, and a second top layer provided on the first top layer.
9 . The display device of claim 8 , wherein
the first top layer is formed of titanium, and
the second top layer is formed of ITO.
10 . The display device of claim 1 , further comprising a sealing layer which continuously covers the partition and a thin film including the organic layer and the upper electrode.
11 . The display device of claim 10 , wherein
the thin film further comprises an optical adjustment layer which covers the upper electrode, and
the optical adjustment layer is formed of a material which is different from the upper electrode and the sealing layers.
12 . The display device of claim 10 , wherein
the rib and the sealing layer are formed of inorganic insulating materials which are different from each other.
13 . A manufacturing method of a display device, including:
forming a lower electrode;
forming a rib which covers at least part of the lower electrode; and
forming a partition on the rib, the partition including a conductive bottom portion, a stem portion located on the bottom portion and a top portion located on the stem portion, wherein
the forming the partition includes:
forming a conductive first layer;
forming a second layer on the first layer;
forming a third layer on the second layer;
forming a resist on the third layer;
forming the top portion by removing a portion of the third layer exposed from the resist;
removing a portion of the second layer exposed from the top portion;
decreasing a width of the second layer which remains under the top portion to a first width which is less than a width of the top portion;
forming the bottom portion by removing a portion of the first layer exposed from the second layer and having the first width; and
forming the stem portion by decreasing the width of the second layer to a second width which is less than a width of the bottom portion after forming the bottom portion.
14 . The manufacturing method of claim 13 , wherein
a first protrusion length of the bottom portion from a side surface of the stem portion is greater than or equal to 0.2 μm and less than or equal to 0.7 μm.
15 . The manufacturing method of claim 14 , wherein
the first protrusion length is greater than or equal to 0.3 μm and less than or equal to 0.5 μm.
16 . The manufacturing method of claim 13 , wherein
the width of the second layer is decreased to the first width by first wet etching before forming the bottom portion and is decreased to the second width by second wet etching after forming the bottom portion.
17 . The manufacturing method of claim 13 , wherein
the first layer is formed of titanium nitride.
18 . The manufacturing method of claim 13 , wherein
the second layer is formed of aluminum.
19 . The manufacturing method of claim 13 , further including:
forming an organic layer which covers the lower electrode and emits light based on application of voltage; and
forming an upper electrode which covers the organic layer and is in contact with the bottom portion.
20 . The manufacturing method of claim 19 , further including
forming a sealing layer which continuously covers the partition and a thin film including the organic layer and the upper electrode.