METHOD OF MANUFACTURING SEMICONDUCTOR DEVICES, CORRESPONDING SUBSTRATE AND SEMICONDUCTOR DEVICE

1 . A method, comprising:

providing a common electrically conductive substrate for a plurality of semiconductor devices, wherein the common electrically conductive substrate comprises a plurality of first substrate portions configured to host respective semiconductor chips, wherein adjacent first substrate portions in the common electrically conductive substrate have mutually facing sides with elongate sacrificial connecting bars extending between the mutually facing sides;

providing the elongate sacrificial connecting bars with an apertured structure comprising apertures distributed along a length of the elongate sacrificial connecting bars; and

cutting the common electrically conductive substrate along the length of the elongate sacrificial connecting bars to provide singulated individual substrate portions.

2 . The method of claim 1 , wherein the apertures comprise slits extending transverse the elongate sacrificial connecting bars.

3 . The method of claim 1 , further comprising providing tie bars distributed along the length of the elongate sacrificial connecting bars and coupling the elongate connecting bars to facing sides of the adjacent first substrate portions in the common electrically conductive substrate, wherein the apertured structure of the elongate sacrificial connecting bars comprises apertures provided at said tie bars.

4 . The method of claim 3 , wherein the apertures provided at tie bars comprise terminal ends of the apertures extending into the tie bars.

5 . The method of claim 1 , wherein the plurality of first substrate portions in the common electrically conductive substrate comprise die pads configured to host respective semiconductor chips, wherein the method comprises providing apertures distributed along the length of the elongate sacrificial connecting bars at said die pads.

6 . The method of claim 1 , further comprising molding a molding compound onto the common electrically conductive substrate, wherein the molding compound penetrates into the apertured structure of the elongate sacrificial connecting bars.

7 . The method of claim 6 , further comprising cutting through the common electrically conductive substrate along the length of the elongate sacrificial connecting bars with the molding compound penetrated into the apertured structure of the elongate sacrificial connecting bars.

8 . The method of claim 1 , further comprising:

providing respective semiconductor chips at the plurality of substrate portions in the common electrically conductive substrate; and

cutting along the length of the elongate sacrificial connecting bars, wherein the common electrically conductive substrate has respective semiconductor chips provided at the plurality of substrate portions.

9 . The method of claim 1 , wherein the apertures comprise openings which pass completely through a thickness of the elongate sacrificial connecting bars.

10 . The method of claim 1 , wherein the common electrically conductive substrate further comprises a plurality of second substrate portions configured to provide electrical leads, wherein adjacent second substrate portions in the common electrically conductive substrate have mutually facing sides with elongate sacrificial connecting bars extending between the mutually facing sides, and wherein the apertures distributed along the length of the elongate sacrificial connecting bars are not present at the second substrate portions configured to provide electrical leads.

11 . An electrically conductive substrate, comprising:

a plurality of first substrate portions configured to host respective semiconductor chips;

wherein adjacent first substrate portions in the electrically conductive substrate have mutually facing sides and have elongate sacrificial connecting bars extending between the mutually facing sides; and

wherein the elongate sacrificial connecting bars have an apertured structure comprising apertures distributed along a length of the elongate sacrificial connecting bars.

12 . The electrically conductive substrate of claim 11 , wherein the apertures comprise slits extending transverse the elongate sacrificial connecting bars.

13 . The electrically conductive substrate of claim 11 , further comprising:

tie bars distributed along the length of the elongate sacrificial connecting bars to couple the elongate connecting bars to facing sides of the adjacent first substrate portions in the electrically conductive substrate;

wherein the apertured structure of the elongate sacrificial connecting bars comprises apertures provided at said tie bars.

14 . The electrically conductive substrate of claim 13 , wherein the apertures provided at said tie bars preferably comprise terminal ends of the apertures extending into the tie bars.

15 . The electrically conductive substrate of claim 11 , wherein the plurality of first substrate portions in the electrically conductive substrate comprise die pads configured to host respective semiconductor chips, and wherein the electrically conductive substrate comprises apertures distributed along the length of the elongate sacrificial connecting bars at said die pads.

16 . The electrically conductive substrate of claim 11 , wherein the apertures comprise openings which pass completely through a thickness of the elongate sacrificial connecting bars.

17 . The electrically conductive substrate of claim 11 , wherein the electrically conductive substrate further comprises a plurality of second substrate portions configured to provide electrical leads, wherein adjacent second substrate portions in the electrically conductive substrate have mutually facing sides with elongate sacrificial connecting bars extending between the mutually facing sides, and wherein the apertures distributed along the length of the elongate sacrificial connecting bars are not present at the second substrate portions configured to provide electrical leads.

18 . A semiconductor device, comprising:

an electrically conductive substrate including a substrate portion;

a semiconductor chip mounted to the substrate portion;

wherein the electrically conductive substrate further includes at least one tie bar projecting from a side of the substrate portion;

wherein said at least one tie bar includes an aperture extending through the at least one tie bar at a distal end of the at least one tie bar; and

a protective package of insulating molding material encapsulating the semiconductor chip, said protective package having a side edge; and

wherein the distal end of the at least one tie bar and aperture are exposed at the side edge.

19 . The semiconductor device of claim 18 , further comprising a molding compound within the aperture at the distal end of the at least one tie bar.