UV REFLECTIVE MIRRORS FOR DISPLAY FABRICATION
An apparatus is disclosed which includes an ultraviolet laser and at least one reflective mirror having a substrate which is made from beryllium, an aluminum metal matrix, or silicon carbide. The at least one mirror is adapted to reflect a laser beam generated from the ultraviolet laser, which can then be used on a silicon film used in the production of an electronic display. The laser beam can be used to anneal the silicon film, or in a laser lift-off process for separating the silicon film from a temporary substrate upon which the silicon film was mounted.
1 .- 27 . (canceled)
28 . An ultraviolet reflective mirror, comprising:
a mirror substrate; and
an ultraviolet reflective coating deposited upon a front surface of the mirror substrate;
wherein the mirror substrate is:
a mirror substrate comprising beryllium and at least one alloying element selected from Al, Ti, Co, Ni, Cu, Pd, Au, Nb, Ag, Ta, V, Cr, Mn, Fe, Mo, W, Re, Zr, Hf, Y, La, Ce, Th, U, Np, Pu, Am, Ca, and Mg, wherein the mirror substrate contains from about 50 wt % to about 99.99 wt % of beryllium and from about 0.01 wt % to about 50 wt % of the at least one alloying element; or
a mirror substrate made from an aluminum-beryllium composition, which is in the form of an alloy or a metal matrix composite, wherein the aluminum-beryllium composition contains at least 60 wt % beryllium and at least 30 wt % aluminum.
29 . The ultraviolet reflective mirror of claim 28 , wherein the mirror substrate comprises a grade of beryllium selected from at least one of:
(a) O-50, having a 99.5 wt % minimum Be content and a 0.5 wt % maximum BeO content;
(b) S-65, having a 99 wt % minimum Be content and a 1 wt % maximum BeO content;
(c) I-70, having a 99 wt % minimum Be content and a 0.7 wt % maximum BeO content;
(d) S-200, having a 98.5 wt % minimum Be content and a 1.5 wt % maximum BeO content;
(e) I-220 having a 98 wt % minimum Be content and a 2.2 wt % maximum BeO content; and
(f) I-250 having a 97.5 wt % minimum Be content and a 2.5 wt % maximum BeO content.
30 . The ultraviolet reflective mirror of claim 28 , wherein the mirror substrate is made from an aluminum-beryllium metal matrix composite and one or more reinforcing particles.
31 . The ultraviolet reflective mirror of claim 30 , wherein the one or more reinforcing particles includes at least one ceramic material selected from the group consisting of carbides, oxides, silicides, borides, and nitrides.
32 . The ultraviolet reflective mirror of claim 30 , wherein the one or more reinforcing particles includes silicon carbide.
33 . The ultraviolet reflective mirror of claim 28 , wherein the ultraviolet reflective coating includes a base layer deposited upon the front surface of the mirror substrate and at least one dielectric layer upon the base layer.
34 . The ultraviolet reflective mirror of claim 28 , wherein the ultraviolet reflective coating is a layer made from a combination of hafnium dioxide (HfO 2 ) and silicon dioxide (SiO 2 ), or wherein the ultraviolet reflective coating is formed from alternating layers of (i) a coating formed from aluminum and hafnium oxide and (ii) a coating formed from aluminum and silicon dioxide.
35 . The ultraviolet reflective mirror of claim 28 , wherein a rear surface of the mirror substrate includes ribs for strengthening the ultraviolet reflective mirror.
36 . An ultraviolet laser apparatus comprising:
an ultraviolet laser; and
at least one ultraviolet reflective mirror according to claim 28 , wherein the at least one ultraviolet reflective mirror is adapted to reflect a laser beam generated from the ultraviolet laser.
37 . The ultraviolet laser apparatus of claim 36 , further comprising a beam homogenizer, a beam expander, a focusing lens, or a beam splitter.
38 . A method of making an electronic part, comprising:
receiving an ultraviolet laser apparatus comprising an ultraviolet laser and at least one ultraviolet reflective mirror comprising a mirror substrate;
generating a laser beam with the ultraviolet laser; and
reflecting the laser beam with the at least one ultraviolet reflective mirror toward a precursor film to produce the electronic part;
wherein the mirror substrate is:
a mirror substrate comprising beryllium and at least one alloying element selected from Al, Ti, Co, Ni, Cu, Pd, Au, Nb, Ag, Ta, V, Cr, Mn, Fe, Mo, W, Re, Zr, Hf, Y, La, Ce, Th, U, Np, Pu, Am, Ca, and Mg, wherein the mirror substrate contains from about 50 wt % to about 99.99 wt % of beryllium and from about 0.01 wt % to about 50 wt % of the at least one alloying element; or
a mirror substrate made from an aluminum-beryllium composition, which is in the form of an alloy or a metal matrix composite, wherein the aluminum-beryllium composition contains at least 60 wt % beryllium and at least 30 wt % aluminum.
39 . The method of claim 38 , wherein the precursor film is an amorphous film.
40 . The method of claim 39 , wherein the laser beam is reflected directly upon the precursor film to induce crystallization of the amorphous film.
41 . The method of claim 38 , wherein the precursor film is mounted upon a temporary substrate, and the laser beam is reflected through the temporary substrate onto the precursor film to separate the precursor film from the temporary substrate.
42 . The method of claim 38 , wherein the electronic part is used in an is used in an organic light-emitting diode (OLED) display or a low-temperature polycrystalline silicon liquid crystal display (LTPS LCD).
43 . A method of using a display fabrication apparatus, comprising:
reflecting an ultraviolet laser beam with at least one ultraviolet reflective mirror onto a silicon film to produce an electronic part to be used in a panel display;
wherein the display fabrication apparatus comprises an ultraviolet laser and the at least one ultraviolet reflective mirror comprises:
a mirror substrate comprising beryllium and at least one alloying element selected from Al, Ti, Co, Ni, Cu, Pd, Au, Nb, Ag, Ta, V, Cr, Mn, Fe, Mo, W, Re, Zr, Hf, Y, La, Ce, Th, U, Np, Pu, Am, Ca, and Mg, wherein the mirror substrate contains from about 50 wt % to about 99.99 wt % of beryllium and from about 0.01 wt % to about 50 wt % of the at least one alloying element; or
a mirror substrate made from an aluminum-beryllium composition, which is in the form of an alloy or a metal matrix composite, wherein the aluminum-beryllium composition contains at least 60 wt % beryllium and at least 30 wt % aluminum.
44 . The method of claim 43 , wherein the silicon film is an amorphous silicon film.
45 . The method of claim 43 , wherein the ultraviolet laser beam is reflected directly upon the silicon film to induce crystallization of the silicon film.
46 . The method of claim 43 , wherein the silicon film is mounted upon a temporary substrate, and the ultraviolet laser beam is reflected through the temporary substrate onto the silicon film to separate the silicon film from the temporary substrate.
47 . The method of claim 43 , wherein the electronic part is used in an organic light-emitting diode (OLED) display or a low-temperature polycrystalline silicon liquid crystal display (LTPS LCD).