Light emitting diodes with n-polarity and associated methods of manufacturing
Light emitting diodes (“LEDs”) with N-polarity and associated methods of manufacturing are disclosed herein. In one embodiment, a method for forming a light emitting diode on a substrate having a substrate material includes forming a nitrogen-rich environment at least proximate a surface of the substrate without forming a nitrodizing product of the substrate material on the surface of the substrate. The method also includes forming an LED structure with a nitrogen polarity on the surface of the substrate with a nitrogen-rich environment.
1. A semiconductor device, comprising:
a substrate including a substrate material; and
a light emitting diode including:
a first semiconductor material directly on a major surface of the substrate,
an active region on the first semiconductor material, and
a second semiconductor material on the active region; and
wherein the substrate comprises a first region adjacent the major surface having a higher concentration of nitrogen than a second region spaced apart from the major surface, and
wherein the first region is substantially free of covalent and ionic bonds between nitrogen atoms in the first region and the substrate material in the first region.
2. The semiconductor device of claim 1 , wherein the first region does not include a nitrodizing product of the substrate material at an interface between the surface of the substrate and the first semiconductor material.
3. The semiconductor device of claim 1 wherein:
the substrate includes a silicon wafer having a lattice structure;
the substrate material includes silicon (Si);
the first semiconductor material includes an N-type gallium nitride (GaN) material;
the active region includes an indium gallium nitride (InGaN) material;
the second semiconductor material includes a P-type GaN material; and
the nitrogen (N) atoms in the first region are trapped in the lattice structure of the silicon wafer without forming a silicon nitride (SiN) crystal structure with the silicon (Si) in the silicon wafer.
4. The semiconductor device of claim 1 wherein:
the substrate includes a silicon wafer;
the substrate material includes silicon (Si);
the first semiconductor material includes an N-type gallium nitride (GaN) material;
the active region includes an indium gallium nitride (InGaN) material;
the second semiconductor material includes a P-type GaN material; and
an interface between the surface of the silicon wafer and the N-type GaN material is substantially free of crystalline silicon nitride (SiN).
5. The semiconductor device of claim 1 wherein:
the substrate includes a silicon wafer;
the substrate material includes silicon (Si); and
an interface between the surface of the silicon wafer and the first semiconductor material is substantially free of crystalline silicon nitride (SiN).
6. The semiconductor device of claim 1 wherein:
the first semiconductor material is one of a P-type semiconductor material and an N-type semiconductor material; and
the second semiconductor material is the other of the P-type semiconductor material and the N-type semiconductor material.
7. The semiconductor device of claim 6 wherein the N-type semiconductor material is N-type gallium nitride.
8. The semiconductor device of claim 6 wherein the P-type semiconductor material is P-type gallium nitride.
9. The semiconductor device of claim 1 wherein the substrate material includes silicon (Si), silicon carbide (SiC), or sapphire (Al 2 O 3 ).
10. A light emitting diode device, comprising:
a substrate material having a first major surface and an opposite second major surface;
an active region carried by the substrate material, wherein a distance between the first major surface of the substrate material and the active region is less than a distance between the second major surface of the substrate material and the active region; and
nitrogen atoms in a first region of the substrate material adjacent the first major surface, wherein the first region is substantially free of covalent and ionic bonds between the nitrogen atoms and the substrate material.
11. The light emitting diode device of claim 10 wherein there is no nitrodizing product of the substrate material between the substrate material and the active region.
12. The light emitting diode device of claim 10 , further comprising a nitrogen-polar material between the substrate material and the active region.
13. The light emitting diode device of claim 12 wherein:
the nitrogen-polar material includes a first semiconductor material directly adjacent to a first side of the active region, and
the light emitting diode device further comprises a second semiconductor material directly adjacent to a second side of the active region opposite to the first side of the active region.
14. The light emitting diode device of claim 13 , wherein:
the first semiconductor material is one of a P-type semiconductor material and an N-type semiconductor material; and
the second semiconductor material is the other of the P-type semiconductor material and the N-type semiconductor material.
15. The light emitting diode device of claim 14 wherein the N-type semiconductor material is N-type gallium nitride.
16. The light emitting diode device of claim 14 wherein the P-type semiconductor material is P-type gallium nitride.
17. The light emitting diode device of claim 14 wherein the first semiconductor material is directly adjacent to the substrate material.
18. The light emitting diode device of claim 14 wherein the nitrogen-polar material includes a buffer material between the substrate material and the first semiconductor material.
19. The light emitting diode device of claim 10 wherein the substrate material includes silicon (Si), silicon carbide (SiC), or sapphire (Al 2 O 3 ).
20. A semiconductor device, comprising:
a silicon substrate having a first major surface and an opposite second major surface;
a light emitting diode (LED) carried by the silicon substrate, wherein a distance between the first major surface of the silicon substrate and the LED is less than a distance between the second major surface of the silicon substrate and the LED; and
nitrogen atoms in a first region of the silicon substrate adjacent the first major surface, wherein the first region is substantially free of covalent and ionic bonds between nitrogen atoms in the first region and silicon atoms in the first region.