Semiconductor light-emitting element and method for manufacturing semiconductor light-emitting element
A semiconductor light-emitting element includes a growth substrate, a plurality of columnar semiconductor layers formed on the growth substrate, a p-type embedded semiconductor layer that is in contact with side surfaces of the plurality of columnar semiconductor layers and that covers the columnar semiconductor layers, a tunnel junction layer formed on the embedded semiconductor layer, and an n-type semiconductor layer formed on the tunnel junction layer. A mesa structure is formed in the embedded semiconductor layer, the tunnel junction layer, and the n-type semiconductor layer. The tunnel junction layer is formed to extend up to a side surface of the mesa structure.
1 . A semiconductor light-emitting element comprising:
a growth substrate;
a plurality of columnar semiconductor layers formed on the growth substrate;
a p-type embedded semiconductor layer that is in contact with side surfaces of the plurality of columnar semiconductor layers and that covers the columnar semiconductor layers;
a tunnel junction layer formed on the embedded semiconductor layer; and
an n-type semiconductor layer formed on the tunnel junction layer,
wherein a mesa structure is formed in the embedded semiconductor layer, the tunnel junction layer, and the n-type semiconductor layer, and
the tunnel junction layer is formed to extend up to a side surface of the mesa structure, and
the tunnel junction layer is formed with a groove reaching up from a surface of the mesa structure.
2 . The semiconductor light-emitting element according to claim 1 , wherein the tunnel junction layer has a stacked structure of an n+ layer and a p+ layer, and the groove reaches up to at least the p+ layer from the surface of the mesa structure.
3 . The semiconductor light-emitting element according to claim 2 ,
wherein the groove is formed to reach up to the embedded semiconductor layer.
4 . The semiconductor light-emitting element according to claim 3 ,
wherein the groove is formed to reach up to a growth substrate side with respect to a top surface of the columnar semiconductor layer.
5 . The semiconductor light-emitting element according to claim 1 ,
wherein the groove is formed in a region except for the columnar semiconductors, in a plan view.
6 . The semiconductor light-emitting element according to claim 1 ,
wherein the groove is formed in a dot shape or a linear shape.
7 . A method for manufacturing a semiconductor light-emitting element, the method comprising:
a first growth step of forming, on a growth substrate, a plurality of columnar semiconductor layers and a p-type embedded semiconductor layer;
a second growth step of forming, on the embedded semiconductor layer, a tunnel junction layer and an n-type semiconductor layer;
a mesa forming step of forming a mesa structure in the embedded semiconductor layer, the tunnel junction layer, and the n-type semiconductor layer to expose the tunnel junction layer from a side surface of the mesa structure; and
an activation step of activating a p+ layer included in the tunnel junction layer, after the mesa forming step.
8 . The method for manufacturing a semiconductor light-emitting element according to claim 7 , further comprising:
a groove etching step of forming, by etching, a groove that reaches up to at least the p+ layer from a surface of the mesa structure, after the second growth step and before the activation step.
9 . The method for manufacturing a semiconductor light-emitting element according to claim 7 ,
wherein the second growth step includes a groove mask removal step of:
forming a mask on a part of the embedded semiconductor layer;
growing the tunnel junction layer and the n-type semiconductor layer, by selective growth using the mask; and
removing the mask to form a groove, after the second growth step and before the activation step.