CHEMICAL MECHANICAL POLISHING COMPOSITION AND POLISHING METHOD
The present invention provides a chemical mechanical polishing composition with which it is possible to suppress ruthenium corrosion and also perform chemical mechanical polishing of a semiconductor substrate containing ruthenium while maintaining a stable polishing speed. The composition for chemical mechanical polishing of the present invention contains: (A) abrasive grains; (B) an acid containing at least one anion selected from the group consisting of periodate ions (IO 4 − ), hypochlorite ions (CIO − ), chlorite ions (CIO 2 − ) and hypobromite ions (BrO − ) or a salt of said acid; and (C) hydrogen peroxide. MB/MC=0.015 to 11, where MB (mol/L) is the amount of the (B) acid or salt thereof and MC (mol/L) is the amount of hydrogen peroxide (C).
1 . A chemical mechanical polishing composition comprising:
abrasive grains (A);
an acid containing at least one anion selected from the group consisting of periodate ions (IO 4 − ), hypochlorite ions (CIO − ), chlorite ions (CIO 2 −‘) and hypobromite ions (BrO − ) or a salt thereof (B); and
hydrogen peroxide (C),
wherein MB/MC=0.015 to 11, where MB (mol/L) is an amount of the acid or salt thereof (B) and MC (mol/L) is an amount of hydrogen peroxide (C).
2 . The chemical mechanical polishing composition according to claim 1 ,
wherein the abrasive grains (A) have a functional group represented by the following general formula (1) or (2),
(M + represents a monovalent cation).
3 . The chemical mechanical polishing composition according to claim 1 ,
wherein the abrasive grains (A) have a functional group represented by the following general formula (3) or (4),
(in the formulae (3) and (4), R 1 , R 2 and R 3 each independently represent a hydrogen atom or a substituted or unsubstituted hydrocarbon group, and M − represents an anion).
4 . The chemical mechanical polishing composition according to claim 1 ,
wherein the abrasive grains (A) in the chemical mechanical polishing composition have an absolute value of a zeta potential of 10 mV or higher.
5 . The chemical mechanical polishing composition according to claim 1 ,
wherein MB (mol/L) is 0.001 to 0.05 mol/L.
6 . The chemical mechanical polishing composition according to claim 1 ,
wherein pH is 6 or higher and 12 or lower.
7 . A polishing method comprising:
a step of polishing a semiconductor substrate using the chemical mechanical polishing composition according to claim 1 .
8 . The polishing method according to claim 7 ,
wherein the semiconductor substrate includes a part composed of at least one selected from the group consisting of ruthenium and a ruthenium alloy.
9 . The chemical mechanical polishing composition according to claim 2 ,
wherein the abrasive grains (A) in the chemical mechanical polishing composition have an absolute value of a zeta potential of 10 mV or higher.
10 . The chemical mechanical polishing composition according to claim 3 ,
wherein the abrasive grains (A) in the chemical mechanical polishing composition have an absolute value of a zeta potential of 10 mV or higher.
11 . The chemical mechanical polishing composition according to claim 2 ,
wherein MB (mol/L) is 0.001 to 0.05 mol/L.
12 . The chemical mechanical polishing composition according to claim 3 ,
wherein MB (mol/L) is 0.001 to 0.05 mol/L.
13 . The chemical mechanical polishing composition according to claim 4 ,
wherein MB (mol/L) is 0.001 to 0.05 mol/L.
14 . The chemical mechanical polishing composition according to claim 2 ,
wherein pH is 6 or higher and 12 or lower.
15 . The chemical mechanical polishing composition according to claim 3 ,
wherein pH is 6 or higher and 12 or lower.
16 . The chemical mechanical polishing composition according to claim 4 ,
wherein pH is 6 or higher and 12 or lower.
17 . The chemical mechanical polishing composition according to claim 5 ,
wherein pH is 6 or higher and 12 or lower.