Display device including a strip oxide semiconductor overlapping an opening
According to one embodiment, a display device includes a gate line extending in a first direction, first and second source lines crossing the gate line and arranged in the first direction, a first light-shielding layer having first and second openings, and an oxide semiconductor layer crossing the gate line, and in the display device, the first opening and the second opening are arranged in a second direction crossing the first direction between the first source line and the second source line, the gate line is located between the first opening and the second opening, and the oxide semiconductor layer has a first overlapping portion overlapping the first opening.
1. A display device comprising:
a first source line;
a second source line next to the first source line in a first direction;
a first gate line;
a second gate line next to the first gate line in a second direction;
a third gate line next to the second gate line in the second direction; and
an oxide semiconductor crossing the second gate line between the first source line and the second source line, wherein
the second gate line is between the first gate line and the third gate line,
the oxide semiconductor includes a first end and a second end,
the first end of the oxide semiconductor is located between the second gate line and the third gate line in the second direction,
the first end of the oxide semiconductor is located between the first source line and the second source line in the first direction,
the second end of the oxide semiconductor is located between the first gate line and the second gate line in the second direction, and
the second end of the oxide semiconductor is connected to the second source line.
2. The display device of claim 1 , further comprising:
a light-shielding layer, wherein
the light-shielding layer extends parallel to the second gate line, and overlaps the second gate line,
the oxide semiconductor crosses both of the second gate line and the light-shielding layer in a crossing area, and
in the crossing area where the oxide semiconductor crosses both of the second gate line and the light-shielding layer, the oxide semiconductor is sandwiched the second gate line and the light-shielding layer in a sectional view.
3. The display device of claim 2 , wherein a width of the light-shielding layer in the second direction is larger than a width of the second gate line in the second direction.
4. The display device of claim 3 , wherein the light-shielding layer is conductive and is connected to the second gate line.
5. The display device of claim 4 , wherein the light-shielding layer crosses both of the first source line and the second source line.
6. The display device of claim 1 , wherein
the oxide semiconductor has a band-like shape and includes a bent portion,
the bent portion of the oxide semiconductor is located between the first source line and the second source line in the first direction, and
the bent portion of the oxide semiconductor is located between the first gate line and the second gate line in the second direction.
7. The display device of claim 6 , wherein
a first portion of the oxide semiconductor is a portion between the first end and the bent portion,
a second portion of the oxide semiconductor is a portion between the second end and the bent portion, and
the first portion of the oxide semiconductor crosses the second gate line between the first source line and the second source line.
8. The display device of claim 7 , further comprising:
a first pixel electrode; and
a second pixel electrode, wherein
the first pixel electrode is located between the first source line and the second source line, and between the first gate line and the second gate line,
the second pixel electrode is located between the first source line and the second source line, and between the second gate line and the third gate line,
the second pixel electrode is connected to the first end of the oxide semiconductor,
the first pixel electrode overlaps a part of the second portion of the oxide semiconductor,
the first pixel electrode overlaps a part of the first portion of the oxide semiconductor, and
the first pixel electrode overlaps the bent portion.
9. A substrate comprising:
a first source line;
a second source line next to the first source line in a first direction;
a first gate line;
a second gate line next to the first gate line in a second direction;
a third gate line next to the second gate line in the second direction; and
an oxide semiconductor crossing the second gate line between the first source line and the second source line, wherein
the second gate line is between the first gate line and the third gate line,
the oxide semiconductor includes a first end and a second end,
the first end of the oxide semiconductor is located between the second gate line and the third gate line in the second direction,
the first end of the oxide semiconductor is located between the first source line and the second source line in the first direction,
the second end of the oxide semiconductor is located between the first gate line and the second gate line in the second direction, and
the second end of the oxide semiconductor is connected to the second source line.
10. The substrate of claim 9 , further comprising:
a light-shielding layer, wherein
the light-shielding layer extends parallel to the second gate line, and overlaps the second gate line,
the oxide semiconductor crosses both of the second gate line and the light-shielding layer in a crossing area, and
in the crossing area where the oxide semiconductor crosses both of the second gate line and the light-shielding layer, the oxide semiconductor is sandwiched the second gate line and the light-shielding layer in a sectional view.
11. The substrate of claim 10 , wherein a width of the light-shielding layer in the second direction is larger than a width of the second gate line in the second direction.
12. The substrate of claim 11 , wherein the light-shielding layer is conductive and is connected to the second gate line.
13. The substrate of claim 12 , wherein the light-shielding layer crosses both of the first source line and the second source line.
14. The substrate of claim 9 , wherein
the oxide semiconductor has a band-like shape and includes a bent portion,
the bent portion of the oxide semiconductor is located between the first source line and the second source line in the first direction, and
the bent portion of the oxide semiconductor is located between the first gate line and the second gate line in the second direction.
15. The substrate of claim 14 , wherein
a first portion of the oxide semiconductor is a portion between the first end and the bent portion,
a second portion of the oxide semiconductor is a portion between the second end and the bent portion, and
the first portion of the oxide semiconductor crosses the second gate line between the first source line and the second source line.
16. The substrate of claim 15 , further comprising:
a first pixel electrode; and
a second pixel electrode, wherein
the first pixel electrode is located between the first source line and the second source line, and between the first gate line and the second gate line,
the second pixel electrode is located between the first source line and the second source line, and between the second gate line and the third gate line,
the second pixel electrode is connected to the first end of the oxide semiconductor,
the first pixel electrode overlaps a part of the second portion of the oxide semiconductor,
the first pixel electrode overlaps a part of the first portion of the oxide semiconductor, and
the first pixel electrode overlaps the bent portion.