Transmission-based temperature measurement of a workpiece in a thermal processing system
A thermal processing system for performing thermal processing can include a workpiece support plate configured to support a workpiece and heat source(s) configured to heat the workpiece. The thermal processing system can include window(s) having transparent region(s) that are transparent to electromagnetic radiation within a measurement wavelength range and opaque region(s) that are opaque to electromagnetic radiation within a portion of the measurement wavelength range. A temperature measurement system can include a plurality of infrared emitters configured to emit infrared radiation and a plurality of infrared sensors configured to measure infrared radiation within the measurement wavelength range where the transparent region(s) are at least partially within a field of view the infrared sensors. A controller can be configured to perform operations including obtaining transmittance and reflectance measurements associated with the workpiece and determining, based on the measurements, a temperature of the workpiece less than about 600° C.
1. A thermal processing system for performing thermal processing of a semiconductor workpiece, the thermal processing system comprising:
a workpiece support plate configured to support a workpiece;
one or more heat sources configured to heat the workpiece;
a window disposed between the workpiece support plate and the one or more heat sources, the window comprising one or more transparent regions that are transparent to at least a portion of electromagnetic radiation within a measurement wavelength range; and
a temperature measurement system configured to obtain a temperature measurement indicative of a temperature of the workpiece based at least in part on one or more measurement from a plurality of infrared sensor when the temperature of the workpiece is less than about 600° C.
2. The thermal processing system of claim 1 , wherein the workpiece support plate is transparent and configured to pass at least a portion of electromagnetic radiation through the workpiece support plate.
3. The thermal processing system of claim 1 , wherein each infrared sensor corresponds to one of the plurality of infrared emitters, each of the plurality of infrared emitters configured to emit infrared radiation directed at the workpiece, wherein at least a portion of infrared radiation transmitted through the workpiece.
4. The thermal processing system of claim 1 , wherein each infrared sensor corresponds to one of the plurality of infrared emitters, each of the plurality of infrared emitters configured to emit infrared radiation directed at the workpiece, wherein at least a portion of infrared radiation reflected by the workpiece.
5. The thermal processing system of claim 1 , wherein the temperature measurement system comprising a plurality of infrared emitters positioned outside of a workpiece processing chamber.
6. The thermal processing system of claim 1 , wherein the temperature measurement system comprising an emissivity measurement system configured to measure an emissivity of the workpiece, wherein the temperature measurement system obtained the temperature measurement indicative of the temperature of the workpiece based at least in part on the emissivity of the workpiece.
7. The thermal processing system of claim 6 , wherein the emissivity measurement system comprises an infrared emitter configured to emit infrared radiation directed toward the workpiece.
8. The thermal processing system of claim 1 , wherein the temperature measurement system comprising a transmittance measurement system configured to obtain one or more transmittance measurements of a workpiece.
9. The thermal processing system of claim 8 , wherein the transmittance measurement system obtained a center transmittance measurement of a center portion of the workpiece and an edge transmittance measurement of an edge portion of the workpiece.
10. The thermal processing system of claim 1 , wherein the temperature measurement system comprising an emissivity measurement system and a transmittance measurement system.
11. The thermal processing system of claim 10 , wherein the emissivity measurement system and the transmittance measurement system operate at a same wavelength.
12. The thermal processing system of claim 1 , wherein at least one infrared sensor of the plurality of the infrared sensor is phase-locked, the infrared sensor is pulsed at a pulsing frequency.
13. The thermal processing system of claim 5 , wherein at least one infrared emitter of the plurality of infrared emitters is phase-locked, the least one infrared emitter is pulsed at a pulsing frequency.
14. The thermal processing system of claim 1 , wherein the one or more heat sources are configured to emit broadband radiation to heat the workpiece.
15. The thermal processing system of claim 14 , wherein the window comprises one or more opaque regions are configured to block at least a portion of the broadband radiation emitted by the heat sources and within the measurement wavelength range.
16. The thermal processing system of claim 1 , wherein the at least one infrared sensor comprises one or more pyrometers.
17. A method for determining a temperature of a workpiece in a thermal processing system, the thermal processing system comprising a workpiece support plate configured to support a workpiece; one or more heat sources configured to heat the workpiece; a window disposed between the workpiece support plate and the one or more heat sources, the window comprising one or more transparent regions that are transparent to at least a portion of electromagnetic radiation within a measurement wavelength range; a temperature measurement system comprising an emissivity measurement system and a transmittance measurement system, the method comprising:
obtaining, from a plurality of infrared sensors, one or more measurements associated with the transmittance measurement system; and
determining, based at least in part on the one or more measurements associated with the transmittance measurement system, a temperature of the workpiece when the temperature of the workpiece is less than about 600° C.
18. The method of claim 17 , wherein the method further comprises:
obtaining, from the at least one infrared sensor, one or more measurements associated with the emissivity measurement system; and
determining, based at least in part on the one or more measurements associated with the emissivity measurement system, a temperature of the workpiece when the temperature of the workpiece is greater than about 600° C.