Methods for improving perovskite solar cells
The present disclosure relates to a device that includes a first metal oxide layer having a first thickness, a second metal oxide layer having a second thickness, and a base layer having a third thickness, where the first metal oxide layer is positioned between the base layer and the second metal oxide layer, at least one of the base layer and/or the first metal oxide layer includes a carbon-containing material, and at least one of a carbon concentration gradient and/or an oxygen concentration gradient is present across at least one of a portion of the first thickness and/or a portion of the third thickness. In some embodiments of the present disclosure, the first metal oxide layer may be permeable to an oxygen-containing compound. In some embodiments of the present disclosure, the oxygen-containing compound may include at least one of O 3 , N 2 O, and/or H 2 O 2 .
1 . A method comprising:
a first depositing of a first layer comprising a first metal oxide onto a surface;
contacting at least one of the surface or the first layer with at least one of an oxygen-containing compound or an oxygen plasma; and
a second depositing of a second layer comprising a second metal oxide onto the first layer, wherein:
at least one of the surface or the first layer includes a carbon-containing material,
the oxygen-containing compound reacts with at least a portion of the carbon-containing material to form an oxygen-containing functional group bonded to carbon,
the oxygen-containing functional group provides a nucleation site that facilitates, during the second depositing, forming structures comprising -C-O-M at the surface, on the first layer, or a combination thereof, and
M is a metal from at least one of the first metal oxide or the second metal oxide.
2 . The method of claim 1 , wherein the oxygen-containing compound comprises at least one of N 2 O, O 3 , or H 2 O 2 .
3 . The method of claim 1 , wherein the oxygen-containing functional group comprises at least one of an epoxide, a hydroxyl, a carboxyl, a carbonyl, an aldehyde, an ester, a carboxylic acid, an ether, a ketone, an acyl halide, an amide, or an acid anhydride.
4 . The method of claim 1 , wherein the contacting with the oxygen-containing compound or oxygen plasma and the second depositing are performed between 1 and 150 times.
5 . The method of claim 1 , wherein the contacting further comprises contacting with ozone for a period of time between 10 ms and 60 seconds.
6 . The method of claim 1 , wherein the first depositing is performed using at least one of a gas phase method, a vapor phase method, or a solution phase method.
7 . The method of claim 6 , wherein the first depositing is performed using atomic layer deposition and a first metal oxide precursor.
8 . The method of claim 7 , wherein the first depositing is performed between 1 and 150 cycles.
9 . The method of claim 7 , wherein the first metal oxide precursor comprises tetrakis-dimethylamino tin(IV) and the first layer comprises tin oxide.
10 . The method of claim 7 , wherein the first depositing further comprises water.
11 . The method of claim 7 , wherein the first depositing is performed at a temperature between 50° C. and 150° C.
12 . The method of claim 1 , wherein the second depositing is performed using at least one of a gas phase method, a vapor phase method, or a solution phase method.
13 . The method of claim 12 , wherein the second depositing is performed using atomic layer deposition and a second metal oxide precursor.
14 . The method of claim 13 , wherein the second metal oxide precursor comprises tetrakis-dimethylamino tin(IV) and the second layer comprises tin oxide.
15 . The method of claim 13 , wherein the second depositing is performed at a temperature between 50° C. and 150° C.
16 . The method of claim 1 , wherein the surface is part of a base layer having a thickness.
17 . The method of claim 16 , wherein the oxygen-containing functional group is present in at least one of a gradient aligned in a direction across the thickness of the base layer or in a direction that is substantially orthogonal to an interface between the base layer and the first layer.
18 . The method of claim 16 , further comprising, prior to the first depositing, scribing at least a portion of the base layer resulting in a gap passing through the thickness of the base layer and resulting in the forming of the surface.
19 . The method of claim 16 , wherein the second depositing results in at least a portion of the second metal oxide penetrating into at least one of the surface or the base layer.