IP Library Granted Patent US 12,603,572
Granted Patent B2
US 12,603,572 · App. 18/608,044 · Granted Apr 14, 2026

Conduction mode (CRM) control in digital power supply using mosfet drain-to-source edge detection

Inventors: Xun Gong (Shenzhen, CN); Bin Huang (Beijing, CN)
Assignee: STMicroelectronics International N.V.
H02M3/157H02M1/0009H02M1/0025H02M3/158
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Quick Facts
Patent No.
US 12,603,572
App. No.
18/608,044
Granted
Apr 14, 2026
Kind
B2
Abstract

A method of operating a DC-DC converter includes generating a high-side control signal for a high-side transistor and generating a low-side control signal for a low-side transistor to thereby cause conversion of an input voltage to an output voltage. A time shift is measured between a falling edge of the low-side control signal and a time at which a drain-to-source voltage of the low-side transistor becomes higher than a set threshold voltage. A time shift error is determined as a difference between a dead time and the measured time shift, with the dead time being a time between the falling edge of the low-side control signal and a rising edge of the high-side control signal. A frequency of the high-side control signal and the low-side control signal is adjusted, based upon the time shift error, to maintain the DC-DC converter as operating in critical conduction mode.

Claims (29)

1 . A method of operating a DC-DC converter, comprising:

generating a high-side control signal for a high-side transistor of the DC-DC converter and generating a low-side control signal for a low-side transistor of the DC-DC converter to thereby cause conversion of an input voltage to an output voltage;

measuring a time shift between a falling edge of the low-side control signal and a time at which a drain-to-source voltage of the low-side transistor becomes higher than a set threshold voltage;

determining a time shift error as a difference between a dead time and the measured time shift, with the dead time being a time between the falling edge of the low-side control signal and a rising edge of the high-side control signal; and

adjusting a frequency of the high-side control signal and the low-side control signal, based upon the time shift error, to maintain the DC-DC converter as operating in critical conduction mode.

2 . The method of claim 1 , wherein adjusting the frequency of the high-side control signal and the low-side control signal, based upon the time shift error, is performed by:

decreasing the frequency of the high-side control signal and the low-side control signal when the measured time shift is greater than the dead time.

3 . The method of claim 2 , further comprising maintaining the DC-DC converter as operating in the critical conduction mode, or switching operation of the DC-DC converter to the critical conduction mode, based upon the measured time shift being greater than the dead time.

4 . The method of claim 2 , wherein adjusting the frequency of the high-side control signal and the low-side control signal, based upon the time shift error, is performed by:

increasing the frequency of the high-side control signal and the low-side control signal when the measured time shift is less than the dead time.

5 . The method of claim 4 , further comprising maintaining the DC-DC converter as operating in the critical conduction mode based upon the measured time shift being less than the dead time.

6 . The method of claim 1 , further comprising changing the set threshold voltage to thereby change a level of negativity of the inductor current occurring during the dead time.

7 . The method of claim 1 , further comprising increasing the set threshold voltage to increase a level of negativity of the inductor current occurring during the dead time.

8 . The method of claim 1 , further comprising decreasing the set threshold voltage to decrease a level of negativity of the inductor current occurring during the dead time.

9 . A power converter, comprising:

a DC-DC converter including a high-side transistor and a low-side transistor, the DC-DC converter being operable to convert an input voltage to an output voltage;

pulse width modulation (PWM) circuitry configured to generate a high-side control signal for the high-side transistor and generate a low-side control signal for the low-side transistor to thereby cause conversion of the input voltage to the output voltage;

a comparator configured to assert its output in response to a drain-to-source voltage of the low-side transistor being greater than a set threshold voltage;

time-shift capture circuitry configured to measure a time shift between a falling edge of the low-side control signal and a time at which the comparator is asserted;

time-shift control circuitry configured to determine a time shift error as a difference between a dead time and the measured time shift, with the dead time being a time between the falling edge of the low-side control signal and a rising edge of the high-side control signal;

frequency adjustment circuitry configured to generate an output signal indicative of a frequency of the high-side control signal and the low-side control signal, based upon the time shift error, that would maintain the DC-DC converter as operating in critical conduction mode; and

a policy circuit configured to generate a PWM control signal for the PWM circuitry, based upon the output signal from the frequency adjustment circuitry;

wherein the PWM circuitry operates based upon the PWM control signal.

10 . The power converter of claim 9 , further comprising a coupling clamp configured to clamp the drain-to-source voltage of the low-side transistor and provide that clamped drain-to-source voltage to the comparator.

11 . The power converter of claim 10 , further comprising a digital-to-analog converter configured to generate the set threshold voltage.

12 . The power converter of claim 9 , wherein the frequency adjustment circuitry adjusts the frequency of the high-side control signal and the low-side control signal, based upon the time shift error, by decreasing the frequency of the high-side control signal and the low-side control signal when the measured time shift is greater than the dead time.

13 . The power converter of claim 12 , wherein the policy circuitry is further configured to maintain the DC-DC converter as operating in the critical conduction mode, or switch operation of the DC-DC converter to the critical conduction mode, based upon the measured time shift being greater than the dead time.

14 . The power converter of claim 12 , wherein the frequency adjustment circuitry adjusts the frequency of the high-side control signal and the low-side control signal, based upon the time shift error, by increasing the frequency of the high-side control signal and the low-side control signal when the measured time shift is less than the dead time.

15 . The power converter of claim 14 , wherein the policy circuitry is further configured to maintain the DC-DC converter as operating in the critical conduction mode based upon the measured time shift being less than the dead time.

Assignments (4)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jul 18, 2024
From: STMICROELECTRONICS (BEIJING) R&D CO., LTD.
To: STMICROELECTRONICS INTERNATIONAL N.V.
Reel/Frame 068024/0471 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jul 18, 2024
From: STMICROELECTRONICS (SHENZHEN) R&D CO., LTD.
To: STMICROELECTRONICS INTERNATIONAL N.V.
Reel/Frame 068025/0573 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Mar 18, 2024
From: GONG, XUN
To: STMICROELECTRONICS (SHENZHEN) R&D CO., LTD.
Reel/Frame 066810/0204 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Mar 18, 2024
From: HUANG, BIN
To: STMICROELECTRONICS (BEIJING) R&D CO., LTD.
Reel/Frame 066810/0353 →
Continuity (1)
Related Publication 20250293600A1 · Sep 18, 2025
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