IP Library Granted Patent US 12,468,442
Granted Patent B2
US 12,468,442 · App. 18/612,867 · Granted Nov 11, 2025

Techniques for power management using loopback

Inventors: Thomas H. Kinsley (Boise, ID); Matthew A. Prather (Boise, ID)
G06F3/0604G06F3/061G06F3/0625G06F3/0629G06F3/0671
View Patent ↗
Loading inventors, assignments & file history…
Monitor This Case
Get email alerts when status or documents change.
Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US 12,468,442
App. No.
18/612,867
Granted
Nov 11, 2025
Kind
B2
Abstract

Techniques and devices for managing power consumption of a memory system using loopback are described. When a memory system is in a first state (e.g., a deactivated state), a host device may send a signal to change one or more components of the memory system to a second state (e.g., an activated state). The signal may be received by one or more memory devices, which may activate one or more components based on the signal. The one or more memory devices may send a second signal to a power management component, such as a power management integrated circuit (PMIC), using one or more techniques. The second signal may be received by the PMIC using a conductive path running between the memory devices and the PMIC. Based on receiving the second signal or some third signal that is based on the second signal, the PMIC may enter an activated state.

Claims (33)

1 . A method, comprising:

receiving, at a power management integrated circuit (PMIC) that is configured to provide power to a memory device, an activation signal from the memory device to activate a regulator of the PMIC, wherein the activation signal is received at an input pin of the PMIC over a conductive path coupled with an output pin of the memory device while the regulator of the PMIC is in a deactivated state, and wherein the activation signal is received at the input pin based at least in part on a second activation signal transmitted by a host device;

activating the regulator of the PMIC, which regulates the power provided to the memory device, based at least in part on receiving the activation signal from the memory device over the conductive path; and

deactivating the regulator in response to a deactivation signal received from the host device over a sideband that excludes the input pin used to receive the activation signal from the memory device.

2 . The method of claim 1 , wherein the memory device and the PMIC are integrated into a dual input memory module (DIMM).

3 . The method of claim 1 , wherein the activation signal is received by an inter-integrated circuit of the PMIC.

4 . The method of claim 1 , wherein the activation signal received at the PMIC is induced via inductive coupling between the conductive path and a second conductive path.

5 . The method of claim 1 , wherein the activation signal is received at the PMIC based at least in part on activation of a transistor configured to selectively isolate the conductive path from the memory device.

6 . The method of claim 1 , further comprising:

entering, by the PMIC, the deactivated state based at least in part on the memory device entering a deactivated state, wherein receiving the activation signal is based at least in part on the PMIC being in the deactivated state.

7 . A power management integrated circuit (PMIC), comprising:

an inter-integrated circuit coupled with a conductive path;

a supply interface configured to receive power for provision to a memory device; and

a regulator configured to regulate the power provided to the memory device, the PMIC operable to:

receive, at an input pin of the PMIC, an activation signal from the memory device over the conductive path while the regulator of the PMIC is in a deactivated state, wherein the conductive path is coupled with an output pin of the memory device, and wherein the activation signal is received at the input pin based at least in part on a second activation signal transmitted by a host device;

activate the regulator of the PMIC based at least in part on receiving the activation signal from the memory device over the conductive path; and

deactivate the regulator in response to a deactivation signal received from the host device over a sideband channel that excludes the input pin used to receive the activation signal from the memory device.

8 . The PMIC of claim 7 , wherein the memory device and the PMIC are integrated into a dual input memory module (DIMM).

9 . The PMIC of claim 7 , wherein the activation signal is received by the inter-integrated circuit of the PMIC.

10 . The PMIC of claim 7 , wherein the activation signal received at the PMIC is induced via inductive coupling between the conductive path and a second conductive path.

11 . The PMIC of claim 7 , wherein the activation signal is received at the PMIC based at least in part on activation of a transistor configured to selectively isolate the conductive path from the memory device.

12 . The PMIC of claim 7 , wherein the PMIC is operable to:

enter a deactivated state based at least in part on the memory device entering a deactivated state, wherein receiving the activation signal is based at least in part on the PMIC being in the deactivated state.

13 . A memory system, comprising:

a power management integrated circuit (PMIC) configured to provide power to a memory device; and

one or more controllers coupled with the PMIC and configured to cause the memory system to:

receive, at the PMIC, an activation signal from the memory device to activate a regulator of the PMIC, wherein the activation signal is received at an input pin of the PMIC over a conductive path coupled with an output pin of the memory device while the regulator of the PMIC is in a deactivated state, and wherein the activation signal is received at the input pin based at least in part on a second activation signal transmitted by a host device;

activate the regulator of the PMIC, which regulates the power provided to the memory device, based at least in part on receiving the activation signal from the memory device over the conductive path; and

deactivate the regulator in response to a deactivation signal received from the host device over a sideband channel that excludes the input pin used to receive the activation signal from the memory device.

14 . The memory system of claim 13 , wherein the memory device and the PMIC are integrated into a dual input memory module (DIMM).

15 . The memory system of claim 13 , wherein the activation signal is received by an inter-integrated circuit of the PMIC.

16 . The memory system of claim 13 , wherein the activation signal received at the PMIC is induced via inductive coupling between the conductive path and a second conductive path.

17 . The memory system of claim 13 , wherein the activation signal is received at the PMIC based at least in part on activation of a transistor configured to selectively isolate the conductive path from the memory device.

Continuity (4)
Continuation 17544629 · Dec 7, 2021
Continuation 16290126 · Mar 1, 2019
Provisional Application 62697882 · Jul 13, 2018
Related Publication 20240311001A1 · Sep 19, 2024
References Cited (25)
US 20060063555A1 · Robbins · 2006 [cited by examiner]
US 20090300439A1 · Haywood · 2009 [cited by applicant]
US 20090316465A1 · Jain et al. · 2009 [cited by applicant]
US 20110022859A1 · More et al. · 2011 [cited by applicant]
US 20110035560A1 · Bodrozic · 2011 [cited by examiner]
US 20130124888A1 · Tanaka et al. · 2013 [cited by applicant]
US 20150213862A1 · Hendrickson · 2015 [cited by applicant]
US 20160282414A1 · Gielarowski et al. · 2016 [cited by applicant]
US 20170060224A1 · Cao et al. · 2017 [cited by applicant]
US 20170277446A1 · Cheong · 2017 [cited by applicant]
US 20170285989A1 · Lai et al. · 2017 [cited by applicant]
US 20180039324A1 · Lee et al. · 2018 [cited by applicant]
US 20180275714A1 · Chang · 2018 [cited by examiner]
US 20190340142A1 · Patel · 2019 [cited by examiner]
CN 104620321A · 2015 [cited by applicant]
CN 105098406A · 2015 [cited by applicant]
CN 106020721A · 2016 [cited by applicant]
JP 2003037532A · 2003 [cited by applicant]
WO 2005012949A2 · 2005 [cited by applicant]
Chinese patent office, “CN Notice of Allowance, including Search Report,” issued in connection with China Patent Application No. 201980052759.5 dated Jun. 12, 2024 (8 pages total; 4 pages original & 4 pages machine tran… [cited by applicant]
Chinese patent office, “China Office Action,” issued in connection with China Patent Application No. 201980052759.5 dated Feb. 1, 2024 (15 pages) (6 pages of English Translation and 9 pages of Original Document). [cited by applicant]
European Patent Office, “Extended Search Report,” issued in connection with European Patent Application No. 19834333.7, dated Oct. 26, 2021 (8 pages). [cited by applicant]
European Patent Office, “Office Action,” issued in connection with European Patent Application No. 1983433 dated Jun. 29, 2023 (8 pages). [cited by applicant]
International Search Report and Written Opinion received for PCT Patent Application No. PCT/US19/20529, mailed on Jun. 19, 2019, 11 pages. [cited by applicant]
NMOS Pass Transistor, Apr. 5, 2013 (Year: 2013). [cited by applicant]