LOCAL METALLIZATION FOR SEMICONDUCTOR SUBSTRATES USING A LASER BEAM
Local metallization of semiconductor substrates using a laser beam, and the resulting structures, e.g., micro-electronic devices, semiconductor substrates and/or solar cells, are described. For example, a solar cell includes a substrate and a plurality of semiconductor regions disposed in or above the substrate. A plurality of conductive contact structures is electrically connected to the plurality of semiconductor regions. Each conductive contact structure includes a locally deposited metal portion disposed in contact with a corresponding a semiconductor region.
1 . A solar cell, comprising:
a substrate;
a plurality of semiconductor regions disposed above the substrate; and
a plurality of conductive contact structures electrically connected to the plurality of semiconductor regions, each conductive contact structure comprising a locally deposited metal structure disposed in direct physical contact with at least one of the plurality semiconductor regions, a first one of the locally deposited metal structures connected to a first portion of a metal foil by a weakened structure of the metal foil, the weakened structure of the metal foil including patterning, wherein the first portion of the metal foil overhangs the substrate.
2 . The solar cell of claim 1 , wherein the plurality of semiconductor regions is a plurality of N-type and P-type polycrystalline silicon regions disposed above the substrate.
3 . The solar cell of claim 1 , further comprising:
an intervening layer disposed on the substrate, wherein the intervening layer includes openings exposing portions of the plurality of semiconductor regions corresponding to the plurality of conductive contact structures.
4 . The solar cell of claim 3 , further comprising:
a second portion of the metal foil disposed over at least a portion of the intervening layer.
5 . The solar cell of claim 4 , wherein the second portion of the metal foil is in contact with a second one of the locally deposited metal structures.
6 . The solar cell of claim 1 , wherein the conductive contact structures comprise an edge feature.
7 . The solar cell of claim 1 , wherein the metal foil is an aluminum foil.
8 . The solar cell of claim 7 , wherein the aluminum foil has a thickness of approximately 1 nm-500 μm.
9 . The solar cell of claim 7 , wherein the aluminum foil includes aluminum in an amount greater than approximately 97% and silicon in an amount approximately in the range of 0-2%.
10 . The solar cell of claim 7 , wherein the aluminum foil is anodized.
11 . A method of metalizing a substrate, the method comprising:
forming a plurality of semiconductor regions above the substrate;
locating a metal foil above the plurality of semiconductor regions above the substrate; and
exposing the metal foil to a laser beam to form a plurality of conductive contact structures in direct physical contact with the plurality of semiconductor regions, each having a locally deposited metal portion electrically connected to the substrate, a first one of the locally deposited metal structures connected to a portion of the first metal foil by a weakened structure of the metal foil, the weakened structure of the metal foil including patterning, wherein the first portion of the metal foil overhangs the substrate.
12 . The method of claim 11 , wherein locating the metal foil over the substrate comprises locating a continuous sheet of the metal foil over the substrate.
13 . The method of claim 11 , comprising patterning the plurality of conductive contact structures.
14 . The method of claim 11 , further comprising:
subsequent to exposing the metal foil to the laser beam, removing at least a portion of the metal foil.
15 . The method of claim 11 , further comprising:
forming an intervening layer above the substrate, the intervening layer having openings exposing portions of the plurality of semiconductor regions corresponding to the plurality of conductive contact structures.
16 . The method of claim 11 , wherein the metal foil is an aluminum foil.
17 . The method of claim 16 , wherein the aluminum foil has a thickness of approximately 1 nm-500 μm.
18 . The method of claim 16 , wherein the aluminum foil includes aluminum in an amount greater than approximately 97% and silicon in an amount approximately in the range of 0-2%.
19 . The method of claim 16 , wherein the aluminum foil is anodized.
20 . The method of claim 11 , wherein the plurality of semiconductor regions is a plurality of N-type and P-type polycrystalline silicon regions disposed above the substrate.