SEMICONDUCTOR DEVICE
A semiconductor device includes a semiconductor stack; a substrate formed on the semiconductor stack, including a lower surface connected to the semiconductor stack, an upper surface opposite to the lower surface, and a side surface between the lower surface and the upper surface, wherein the side surface includes a mirror area, a first scribing area, and a first crack area, the mirror area is closer to the lower surface than the first scribing area to the lower surface, and the first scribing area is located between the mirror area and the first crack area; an optical structure on the upper surface of the substrate; and a reflective structure on a side surface of the first scribing area and the first crack area, wherein the first scribing area is arranged below the upper surface of the substrate with a distance less than or equal to ¼ of a thickness of the substrate.
1 . A light-emitting device, including:
a semiconductor stack;
a substrate located on the semiconductor stack, including a lower surface connected to the semiconductor stack, an upper surface opposite to the lower surface and a side surface located between the lower surface and the upper surface, wherein the side surface includes a mirror area, a first dicing area, and a first crack area, the mirror area is closer to the lower surface than the first dicing area to the lower surface, and the first dicing area is located between the mirror area and the first crack area;
an optical structure located on the upper surface of the substrate; and
a reflective structure located on a side surface of the first dicing area and the first crack area, wherein the first dicing area is located below the upper surface of the substrate at a distance less than or equal to ¼ of a thickness of the substrate.
2 . The light-emitting device according to claim 1 , wherein the mirror area includes a width greater than 75 μm.
3 . The light-emitting device according to claim 1 , wherein the first dicing area includes a first dicing width between 4 μm and 30 μm.
4 . The light-emitting device according to claim 1 , wherein the first dicing area is located below the upper surface of the substrate at a distance less than 45 μm.
5 . The light-emitting device according to claim 1 , wherein the first dicing area is located below the upper surface of the substrate at a distance less than 25 μm, and the distance is larger than 1 μm.
6 . The light-emitting device according to claim 1 , wherein the first dicing area and the first crack area include a total width smaller than a total width of the mirror area.
7 . The light-emitting device according to claim 1 , wherein the first dicing area includes a roughness standard deviation (RMS) larger than a roughness standard deviation (RMS) of the first crack area, and the roughness standard deviation (RMS) of the first crack area is larger than a roughness standard deviation (RMS) of the mirror area.
8 . The light-emitting device according to claim 1 , wherein the first dicing area includes a plurality of dicing convex portions and/or a plurality of dicing concave portions, and the first crack area includes a plurality of crack convex portions and/or a plurality of crack concave portions extending to the upper surface of the substrate from the first dicing area.
9 . The light-emitting device according to claim 8 , wherein the plurality of dicing convex portions and/or the plurality of dicing concave portions include an amount or a size larger than an amount or a size of the plurality of crack convex portions and/or the plurality of crack concave portions.
10 . The light-emitting device according to claim 8 , wherein a minimum distance between the plurality of dicing convex portions and/or the plurality of dicing concave portions is smaller than a minimum distance between the plurality of crack convex portions and/or the plurality of crack concave portions.
11 . The light-emitting device according to claim 1 , wherein the mirror area includes a plurality of mirror portions passing through the first dicing area to form a plurality of first dicing portions, and one of the plurality of mirror portions is located between two adjacent first dicing portions.
12 . The light-emitting device according to claim 11 , wherein one of the plurality of first dicing portions includes a first length larger than a second length of one of the plurality of mirror portions in a direction parallel to the upper surface.
13 . The light-emitting device according to claim 12 , wherein the mirror portion includes a length of 0.5 to 0.8 times a length of one side of the light-emitting device in a side view of the light-emitting device.
14 . The light-emitting device according to claim 1 , wherein in a side view of the light-emitting device, the side surface includes two edges, and the first dicing area adjacent to the two edges of the substrate includes a roughness standard deviation (RMS) larger than a roughness standard deviation (RMS) of the first dicing area away from the two sides of the substrate.
15 . The light-emitting device according to claim 1 , further including a second dicing area located between the first dicing area and the upper surface of the substrate.
16 . The light-emitting device according to claim 15 , wherein the first crack area is located between the first dicing area and the second dicing area.
17 . The light-emitting device according to claim 15 , wherein the first dicing area includes a first width larger than a second width of the second dicing area.
18 . The light-emitting device according to claim 15 , wherein the first dicing area includes a first width smaller than a second width of the second dicing area.
19 . The light-emitting device according to claim 15 , wherein the first dicing area includes a first width that is the same as a second width of the second dicing area.
20 . The light-emitting device according to claim 1 , wherein the optical structure contains a wavelength conversion material and includes a layered structure.