Silicon carbide thin films and vapor deposition methods thereof
A vapor deposition process is provided for the growth of as-deposited hydrogen-free silicon carbide (SiC) and SiC films including oxygen (SiC:O) thin films. For producing the SiC thin films, the process includes providing a silahydrocarbon precursor, such as TSCH (1,3,5-trisilacyclohexane), in the vapor phase, with or without a diluent gas, to a reaction zone containing a heated substrate, such that adsorption and decomposition of the precursor occurs to form stoichiometric, hydrogen-free, silicon carbide (SiC) in a 1:1 atom ratio between silicon and carbon on the substrate surface without exposure to any other reactive chemical species or co-reactants. For the SiC:O films, an oxygen source is added to the reaction zone to dope the SiC films with oxygen. In the silahydrocarbon precursors, every carbon atom is bonded to two silicon atoms, with each silicon atom being additionally bonded to two or more hydrogen atoms.
1. A method for producing an as-deposited SiC:O thin film containing not more than 1 atomic % hydrogen onto a substrate in a reaction zone of a deposition chamber, the method comprising:
providing a substrate in a reaction zone of a deposition chamber;
heating a substrate to a temperature of about 600° C. to about 1000° C.;
providing a precursor comprising a silahydrocarbon, wherein every carbon atom is bonded to two silicon atoms, with each silicon atom being additionally bonded to two or more hydrogen atoms, in the vapor phase without a carrier gas to the reaction zone containing the substrate; and
simultaneously providing a co-reactant reactive oxygen-containing gas to the reaction zone containing the substrate;
wherein a layer of SiC:O is formed on a substrate surface by adsorption and decomposition of the precursor;
and wherein the SiC:O thin film consists essentially of silicon, carbon, oxygen and not more than 1 atomic % hydrogen.
2. The method according to claim 1 , wherein the substrate comprises silicon, silicon oxide, silicon nitride, silicon carbide, gallium nitride, cobalt, ruthenium, copper, platinum, titanium, titanium nitride, tantalum, or tantalum nitride.
3. The method according to claim 1 , wherein the precursor comprises 1,3,5-trisilapentane; 1,3,5,7-tetrasilanonane; tricyclo[3.3.1.13,7]pentasilane; 1,3-disilacyclobutane; 1,3,5-trisilacyclohexane (TSCH); or 1,3,5,7-tetrasilacyclooctane.
4. The method according to claim 3 , wherein the precursor comprises 1,3,5-trisilacyclohexane (TSCH) or 1,3,5,7-tetrasilacyclooctane.
5. The method according to claim 1 , wherein the substrate is heated to a temperature of about 700° C. to about 850° C.
6. The method according to claim 1 , wherein the oxygen-containing gas comprises oxygen, water, ozone, and/or nitrous oxide.
7. The method according to claim 1 , wherein a partial pressure of the precursor in the deposition chamber is maintained at about 10% to about 100% of a total pressure in the reaction zone.