BIPOLAR TRANSISTOR
An electronic device includes a bipolar transistor. A collector of the bipolar transistor is formed by first and second regions. The second region is located between the first region and a base of the bipolar transistor. A conductive element at least partially surrounds and is insulated from the second region. The conductive element is located between the first region and the base.
1 . A method of manufacturing an electronic device including a bipolar transistor, the method comprising:
forming a collector of the bipolar transistor to include a first region and a second region;
forming a base of bipolar transistor;
wherein the second region is positioned between the first region and the base; and
manufacturing a conductive element insulated from and at least partially surrounding the second region;
wherein the conductive element is located between the first region and the base.
2 . The method according to claim 1 , wherein the conductive element entirely surrounds the second region.
3 . The method according to claim 1 , wherein the conductive element is made of polysilicon.
4 . The method according to claim 1 , further comprising a biasing pad for the bipolar transistor that is electrically coupled to the conductive element.
5 . The method according to claim 1 , further comprising:
forming a first insulating layer in a substrate;
etching a first cavity in the first insulating layer; and
filling the first cavity with a conductive material to form a conductive region.
6 . The method according to claim 5 , further comprising:
forming a second insulating layer covering the conductive region;
forming a second cavity crossing the conductive region to form the conductive element from the conductive region; and
forming a third insulating layer covering exposed lateral walls of the conductive element.
7 . The method according to claim 6 , further comprising:
doping the substrate to form the first region of the collector; and
epitaxially growing semiconductor material in the second cavity from the first portion to form the second region of the collector.
8 . The method according to claim 7 , further comprising:
forming of an insulated-gate field effect transistor;
wherein portions of the insulated-gate field effect transistor are formed during the step of doping the substrate to form the first region.
9 . The method according to claim 6 , further comprising forming the base on the second insulating layer.
10 . The method according to claim 5 , wherein the electronic device comprises a MOSFET transistor inside and on top of a portion of the substrate which includes said bipolar transistor.
11 . An electronic device, comprising:
a bipolar transistor including:
a collector of comprising a first region and a second region;
a base;
wherein the second region is located between the first region and the base; and
a conductive element at least partially surrounding and insulated from the second portion;
wherein the conductive element is located between the first portion and the base.
12 . The electronic device according to claim 11 , wherein the bipolar transistor is of NPN type and wherein the conductive element is configured to be biased by a positive potential.
13 . The electronic device according to claim 12 , wherein the positive potential has an absolute value smaller than 5 V.
14 . The electronic device according to claim 12 , wherein a value of the positive potential is independent from a value applied to the base, to the collector, and to an emitter of the bipolar transistor.
15 . The electronic device according to claim 11 , wherein the bipolar transistor is of PNP type and wherein the conductive element is configured to be biased by a negative potential.
16 . The electronic device according to claim 15 , wherein the negative potential has an absolute value smaller than 5 V.
17 . The electronic device according to claim 15 , wherein a value of the negative potential is independent from a value applied to the base, to the collector, and to an emitter of the bipolar transistor.
18 . The electronic device according to claim 11 , wherein the conductive element entirely surrounds the second region.
19 . The electronic device according to claim 11 , wherein the conductive element is made of polysilicon.
20 . The electronic device according to claim 11 , further comprising a MOSFET transistor inside and on top of a portion of a substrate which includes said bipolar transistor.