METHODS AND SYSTEMS FOR TREATMENT OF SUPERCONDUCTING CIRCUITS FOR QUANTUM COMPUTERS

1 . A method comprising:

preparing a surface of a device for removal of a dielectric layer;

removing the dielectric layer from the surface of the device; and

reducing two-level-system (TLS) degradation of the device, wherein reducing TLS degradation of the device further comprises:

preventing development of a new dielectric layer on the surface of the device by preventing an interaction between the surface of the device and atmospheric gasses by adding a capping layer to the surface of the device.

2 . The method of claim 1 wherein removing the dielectric layer further comprises:

exposing the device to a heat treatment.

3 . The method of claim 2 wherein exposing the device to a heat treatment further comprises:

evacuating a chamber surrounding the device;

ramping the device to a temperature greater than 340 degrees Celsius;

baking the device for a prescribed time; and

ramping the temperature of the device down.

4 . The method of claim 3 wherein baking the device for a prescribed time comprises:

baking the device for at least one hour.

5 . The method of claim 1 further comprising:

depositing a film on the surface of the device.

6 . The method of claim 5 wherein the film comprises one of:

a niobium film;

a tantalum film; and

a rhenium film.

7 . The method of claim 1 wherein the capping layer exhibits minimal TLS degradation.

8 . The method of claim 1 wherein the device comprises a superconducting quantum circuit.

9 . The method of claim 1 wherein the surface of the device comprises at least one of:

a sapphire substrate; and

a silicon substrate.

10 . The method of claim 1 wherein the capping layer comprises at least one of:

Tantalum;

Gold;

Titanium;

Aluminum;

Rhenium;

titanium nitride;

platinum;

palladium;

silicon; and/or

germanium.