SEMICONDUCTOR COMPONENT
A semiconductor component for emitting light, having a base body that has at least one mesa body with an emission region for light, the at least one mesa body being arranged on a surface of the base body and is assigned a first mirror portion, a second mirror portion, and an active layer arranged between the two mirror portions for generating the light, and having a contact unit for feeding electrical energy into the active layer, the contact unit having a joining portion for joining and/or for external contacting of the semiconductor component and an active contact portion that is arranged between the joining portion and the active layer, the at least one contact unit being arranged on a side of the base body opposite to the emission region, the joining portion at least partially covering the mesa-receiving body portion and a mesa-free body portion of the base body.
1 . A semiconductor component for emitting light, comprising:
a base body that has at least one mesa body arranged on a mesa-receiving body portion with an emission region for the light, the at least one mesa body being arranged on a surface of the base body and which is assigned a first mirror portion, a second mirror portion, and an active layer arranged between the two mirror portions for generating the light; and
at least one contact unit for feeding electrical energy into the active layer, the contact unit comprising a joining portion for joining and/or, in respect of the base body, for external contacting of the semiconductor component and an active contact portion that is arranged between the joining portion and the active layer, the at least one contact unit being arranged on a side of the base body opposite to the emission region, the joining portion at least partially covering the mesa-receiving body portion and a mesa-free body portion of the base body.
2 . The semiconductor component according to claim 1 , wherein the joining portion has at least one connecting element for connection by means of a soldering method to a further component, the at least one connecting element having a joining face that faces away from the surface.
3 . The semiconductor component according to claim 1 , wherein an array arrangement having at least two mesa bodies is formed on the base body, the mesa-free body portion being arranged directly next to the array arrangement.
4 . The semiconductor component according to claim 1 , wherein the mesa-free body portion is arranged on an edge of the base body and not arranged between two mesa-receiving body portions.
5 . The semiconductor component according to claim 1 , wherein at least one mesa body is partially covered by a connecting element.
6 . The semiconductor component according to claim 2 , wherein the connecting element has, parallel to a main extent plane of the base body, a contour that has straight side lines, the contour in particular approximately being a rectangle.
7 . The semiconductor component according to claim 1 , wherein a connecting element is arranged fully on the mesa-free body portion and/or a further connecting element is arranged fully on the mesa-receiving body portion.
8 . The semiconductor component according to claim 1 , wherein a connecting element covers an entirety of the mesa-receiving body portion.
9 . The semiconductor component according to claim 1 , wherein a separating trench that is bounded by mesa bodies and at least one supporting web integrated into the base body is formed between two directly neighboring mesa bodies.
10 . The semiconductor component according to claim 1 , wherein a separating trench is formed between the mesa body and the mesa-free body portion.
11 . The semiconductor component according to claim 1 , wherein the mesa body is enclosed by four separating trenches the four separating trenches being separated from one another by supporting webs.
12 . The semiconductor component according to claim 10 , wherein the separating trench is formed transversely with respect to a main crystal direction.
13 . The semiconductor component according to claim 9 , wherein the electrical conductivity of the supporting web is reduced, in particular by an oxidation process and/or an implantation process, in relation to the electrical conductivity of the material of the mesa bodies.