HIGH CRACK THRESHOLD PLANARIZING COATINGS AND PROCESSES TO FILL WIDE AND DEEP TRENCHES FOR SILICONE WAFERS

1 . A composition for planarizing a substrate, comprising:

a polysiloxane resin comprising the reaction product of one or more monomers of the following formulas:

wherein R is independently selected from an unsubstituted or substituted alkyl group and an unsubstituted or substituted aryl group;

a solvent medium, comprising:

at least one solvent having a boiling point greater than 100° C.; and

at least one solvent having a boiling point less than 100° C.; and

a crosslinker.

2 . The composition of claim 1 , wherein the monomer of Formula I comprises at least one of:

triphenylsiloxane blocks;

phenyldimethylsiloxane blocks; and

trimethylsiloxane blocks;

the monomer of Formula II comprises at least one of:

poly(diphenylsiloxane) blocks;

poly(phenylmethylsiloxane) blocks; and

poly(dimethylsiloxane) blocks;

the monomer of Formula III comprises at least one of:

poly(methylsiloxane) blocks;

poly(phenylsiloxane) blocks;

poly(propylsiloxane) blocks; and

poly(ethylsiloxane) blocks; and

the monomer of Formula IV comprises at least one of:

tetramethoxysilane;

tetraethoxysilane;

silicon tetrachloride;

silicon alkoxide; and

silicon tetraacetate.

3 . The composition of claim 1 , wherein the crosslinker is a siloxane compound of the general formula:

wherein R′ is one of an aliphatic and an aromatic comprising group and R 1 , R 2 , R 3 , R 4 , R 5 , and R 5 are each independently selected from hydrogen and an alkyl group with substituted or unsubstituted carbons.

4 . The composition of claim 1 , wherein the crosslinker is selected from the following formulas:

and combinations of the foregoing.

5 . The composition of claim 1 , further comprising a catalyst, wherein the catalyst is selected from tetraalkylammonium salts such as tetramethylammonium, tetrabutylammonium, cetyltrimethylammonium salts of acetic acid, triflic acid, trifluoro acetic acid, nitric acid, and combinations of the foregoing.

6 . The composition of claim 5 , wherein the composition comprises:

from 1 to 90 wt. % of polysiloxane resin;

from 0.0001 to 10 wt. % of the catalyst;

from 10 to 99 wt. % of the at least one solvent; and

from 0.0001 to 20 wt. % of the crosslinker, each based on a total weight of the composition.

7 . The composition of claim 1 , wherein the at least one solvent having a boiling point greater than 100° C. is selected from dipropylene glycol methyl ether, tripropylene glycol methyl ether, propylene glycol monomethyl ether acetate, n-propoxypropanol, and propylene carbonate, gammabutryo lactone, and combinations of the foregoing.

8 . The composition of claim 1 , wherein the at least one solvent having a boiling point less than 100° C. comprises at least two different solvents.

9 . The composition of claim 8 , wherein each of the two different solvents having a boiling point less than 100° C. are independently selected from acetone, ethyl acetate, methanol, ethanol, propanol, butanol, and isopropyl alcohol.

10 . The composition of claim 1 , wherein the polysiloxane resin further comprises end groups derived from hydroxysilane, chlorosilane, alkoxysilane, acryloxysilane, epoxysilane, non-reactive or chain terminating end groups, and combinations of the foregoing;

11 . A semiconductor article coated with a cured composition of claim 1 .

12 . A method for planarizing a semiconductor substrate, comprising:

applying a composition onto and within a plurality of channels in the semiconductor substrate, the composition comprising:

a polysiloxane resin comprising the reaction product of one or more monomers of the following formulas:

wherein R is independently selected from an unsubstituted or substituted alkyl group and an unsubstituted or substituted aryl group;

a solvent medium, comprising:

at least one solvent having a boiling point greater than 100° C.; and

at least one solvent having a boiling point less than 100° C.; and

a crosslinker; and

curing the composition to form a coating which at least partially fills the channels of the substrate.

13 . The method of claim 12 , wherein the crosslinker is a siloxane compound of the general formula:

wherein R′ is one of an aliphatic and an aromatic comprising group and R 1 , R 2 , R 3 , R 4 , R 5 , and R 6 are each independently selected from hydrogen and an alkyl group with substituted or unsubstituted carbons.

14 . The method of claim 12 , wherein the crosslinker is selected from the following formulas:

and combinations of the foregoing.

15 . The method of claim 12 , wherein applying the composition further comprises spin-coating the composition within the plurality of channels in the semiconductor substrate at a speed from 100 rpm to 500 rpm over a time period from 2 seconds to 60 seconds.

16 . The method of claim 15 , further comprising the additional step, after the applying step, of further spinning the substrate at a speed from 200 to 3000 rpm over a time period from 2 seconds to 60 seconds.

17 . The method of claim 12 , wherein curing the composition further comprises curing the composition at a temperature from 160° C. to 400° C. over a time period from 60 seconds to 60 minutes.

18 . The method of claim 12 , further comprising the additional step, prior to the applying step, of depositing a liner coating within the channels of the substrate.

19 . The method of claim 12 , further comprising the additional step, after the curing step, of depositing an overcoat over the plurality of channels in the substrate.

20 . The method of claim 12 , wherein the coating has a thickness from 1 μm to 100 μm within the plurality of channels of the substrate.