SURFACE ACOUSTIC WAVE (SAW) DEVICE WITH BARRIER LAYERS BETWEEN ALUMINUM-COPPER LAYERS
Certain aspects of present disclosure are directed towards a surface acoustic wave (SAW) device. The SAW device may include a piezoelectric layer and an interdigital transducer (IDT) disposed above the piezoelectric layer and comprising an electrode including: a first aluminum (Al)-copper (Cu) layer; a second Al—Cu layer; a first barrier layer between the first Al—Cu layer and the second Al—Cu layer; a third Al—Cu layer; and a second barrier layer between the second Al—Cu layer and the third Al—Cu layer.
1 . A surface acoustic wave (SAW) device comprising:
a piezoelectric layer; and
an interdigital transducer (IDT) disposed above the piezoelectric layer and comprising an electrode including:
a first aluminum (Al)-copper (Cu) layer;
a second Al—Cu layer;
a first barrier layer between the first Al—Cu layer and the second Al—Cu layer;
a third Al—Cu layer; and
a second barrier layer between the second Al—Cu layer and the third Al—Cu layer.
2 . The SAW device of claim 1 , wherein at least one of the first barrier layer or the second barrier layer is implemented using titanium.
3 . The SAW device of claim 1 , wherein the electrode further comprises at least one of:
a first Al layer between the first Al—Cu layer and the first barrier layer; or
a second Al layer between the second Al—Cu layer and the second barrier layer.
4 . The SAW device of claim 3 , wherein at least one of the first Al layer or the second Al layer comprises a Cu-doped Al layer.
5 . The SAW device of claim 1 , wherein the electrode further comprises a third barrier layer between the piezoelectric layer and the first Al—Cu layer.
6 . The SAW device of claim 5 , wherein the first Al—Cu layer fills an entirety of a region between the third barrier layer and the first barrier layer.
7 . The SAW device of claim 1 , wherein a first magnitude of Cu content between the piezoelectric layer and the first barrier layer is more than a second magnitude of Cu content between the first barrier layer and the second barrier layer.
8 . The SAW device of claim 1 , wherein each of the first Al—Cu layer, the second Al—Cu layer, and the third Al—Cu layer comprises an Al 2 Cu layer.
9 . The SAW device of claim 1 , wherein at least one of the first barrier layer or the second barrier layer is implemented using titanium, chromium, tantalum, tungsten, titanium nitride, chromium nitride, tantalum nitride, or tungsten nitride.
10 . The SAW device of claim 1 , wherein at least one of the first Al—Cu layer, the second Al—Cu layer, or the third Al—Cu layer comprises a grain structure.
11 . A method of fabricating a surface acoustic wave (SAW) device, the method comprising forming an interdigital transducer (IDT) disposed above a piezoelectric layer, wherein forming the IDT comprises forming an electrode and wherein forming the electrode comprises:
forming a first aluminum (Al)-copper (Cu) layer;
forming a first barrier layer;
forming a second Al—Cu layer such that the first barrier layer is between the first Al—Cu layer and the second Al—Cu layer;
forming a second barrier layer; and
forming a third Al—Cu layer such that the second barrier layer is between the second Al—Cu layer and the third Al—Cu layer.
12 . The method of claim 11 , wherein forming the electrode further comprises forming a third barrier layer above the piezoelectric layer before forming the first Al—Cu layer, such that the third barrier layer is disposed between the piezoelectric layer and the first Al—Cu layer.
13 . The method of claim 12 , wherein the first Al—Cu layer is formed to fill an entirety of a region between the third barrier layer and the first barrier layer.
14 . The method of claim 11 , wherein a first magnitude of Cu content between the piezoelectric layer and the first barrier layer is more than a second magnitude of Cu content between the first barrier layer and the second barrier layer.
15 . The method of claim 11 , wherein each of the first Al—Cu layer, the second Al—Cu layer, and the third Al—Cu layer comprises an Al 2 Cu layer.
16 . The method of claim 11 , wherein at least one of the first barrier layer or the second barrier layer comprises titanium, chromium, tantalum, tungsten, titanium nitride, chromium nitride, tantalum nitride, or tungsten nitride.
17 . The method of claim 11 , wherein forming the electrode further comprises forming at least one of:
a first Al layer above the first Al—Cu layer before forming the first barrier layer, such that the first Al layer is disposed between the first Al—Cu layer and the first barrier layer; or
a second Al layer above the second Al—Cu layer before forming the second barrier layer, such that the second Al layer is disposed between the second Al—Cu layer and the second barrier layer.
18 . The method of claim 17 , wherein at least one of the first Al layer or the second Al layer comprises a Cu-doped Al layer.
19 . The method of claim 11 , wherein at least one of the first Al—Cu layer, the second Al—Cu layer, or the third Al—Cu layer comprises a grain structure.
20 . A wireless device comprising:
a radio frequency (RF) circuit; and
a surface acoustic wave (SAW) filter coupled to the RF circuit, the SAW filter comprising:
a piezoelectric layer; and
an interdigital transducer (IDT) disposed above the piezoelectric layer and comprising an electrode including:
a first aluminum (Al)-copper (Cu) layer;
a second Al—Cu layer;
a first barrier layer between the first Al—Cu layer and the second Al—Cu layer;
a third Al—Cu layer; and
a second barrier layer between the second Al—Cu layer and the third Al—Cu layer.