BIPOLAR TRANSISTOR
A device includes a bipolar transistor. The bipolar transistor includes: a collector region, a base region, and an emitter region. A first metallization is in contact with the emitter region, a second metallization is in contact with the base region, and a third metallization is in contact with the collector region. A first connection element is coupled to the first metallization and has dimensions, in a plane of the interface between the first metallization and the connection element, greater than dimensions of the first metallization. A second connection element is coupled to the second metallization and passes through spacers, which at least partially cover the second metallization, surrounding the emitter region. A third connection element is coupled to the third metallization and passes through spacers, which at least partially cover the third metallization, surrounding the base region.
1 . A device comprising a bipolar transistor, the bipolar transistor comprising:
a collector region, a base region, and an emitter region;
a first metallization at an upper surface of the emitter region; and
a connection element coupled to the first metallization and having dimensions, in a plane of an interface between the first metallization and the connection element, greater than dimensions of the first metallization.
2 . The device according to claim 1 , wherein a distance between opposite walls of the connection element is greater than a distance between opposite walls of the first metallization in a same direction.
3 . The device according to claim 1 , wherein an upper surface of the first metallization is entirely covered by, and in contact with, the connection element.
4 . The device according to claim 3 , wherein the transistor is covered with a first insulating layer, and wherein the connection element crosses through the first insulating layer to reach the first metallization.
5 . The device according to claim 1 , wherein the bipolar transistor further comprises:
a second metallization at an upper surface of the base region; and
a first spacer that at least partially covers the second metallization.
6 . The device according to claim 5 , wherein the first spacer surrounds the emitter region.
7 . The device according to claim 5 , wherein the transistor is covered with a first insulating layer, and wherein the device comprises a conductive contact crossing through the first insulating layer to reach the second metallization.
8 . The device according to claim 7 , wherein the conductive contact further crosses through the first spacer.
9 . The device according to claim 8 , wherein a material of the first insulating layer is selectively etchable over a material of the first spacer.
10 . The device according to claim 8 , wherein the transistor comprises a second spacer that is at least partially covered by the first spacer, and wherein said second spacer does not cover the second metallization.
11 . The device according to claim 1 , wherein the bipolar transistor further comprises:
a third metallization at an upper surface of the collector region; and
a third spacer that at least partially covers the third metallization.
12 . The device according to claim 11 , wherein the third spacer surrounds the base region.
13 . The device according to claim 11 , wherein the transistor is covered with a first insulating layer, and wherein the device comprises a conductive contact crossing through the first insulating layer to reach the third metallization.
14 . The device according to claim 13 , wherein the conductive contact further crosses through the third spacer.
15 . The device according to claim 14 , wherein a material of the first insulating layer is selectively etchable over a material of the third spacer.
16 . The device according to claim 14 , wherein the transistor comprises a fourth spacer that is at least partially covered by the third spacer, and wherein said fourth spacer does not cover the third metallization.
17 . A device comprising a bipolar transistor, the bipolar transistor comprising:
a collector region, a base region, and an emitter region;
a first metallization at an upper surface of the emitter region; and
a connection element coupled to the first metallization and having dimensions, in a plane of an interface between the first metallization and the connection element, greater than dimensions of the first metallization;
a second metallization at an upper surface of the base region;
a first spacer that at least partially covers the second metallization;
wherein the transistor is covered with a first insulating layer;
wherein the connection element crosses through the first insulating layer to reach the first metallization;
wherein the device comprises a conductive contact crossing through the first insulating layer to reach the second metallization; and
wherein the conductive contact further crosses through the first spacer.
18 . The device according to claim 17 , wherein an upper surface of the first metallization is entirely covered by, and in contact with, the connection element.
19 . The device according to claim 17 , wherein the first spacer surrounds the emitter region.
20 . The device according to claim 17 , wherein the transistor comprises a second spacer that is at least partially covered by the first spacer, and wherein said second spacer does not cover the second metallization.