INTERFACE PREPARATION FOR TANDEM PHOTOVOLTAIC DEVICES
Ways of making and using tandem photovoltaic devices are provided, where such devices can include a first submodule, a second submodule, and an interface between the first submodule and the second submodule. The interface permits a portion of light to pass therethrough and optically couples the first submodule and the second submodule. Optically coupling the first submodule and the second submodule includes reducing reflection of the portion of light passing through the interface.
1 . A tandem photovoltaic device comprising:
a first submodule; and
a second submodule over the first submodule, wherein the first submodule comprises an interface between the first submodule and the second submodule, wherein:
the interface permits a portion of light to pass therethrough,
the interface optically couples the first submodule and the second submodule, and
the interface comprises:
an absorber layer formed from a thin film semiconductor, the absorber layer having a surface having a roughness with a root mean square average from 50 nanometers to 200 nanometers; and
a conductive layer over the surface of the absorber layer, wherein the conductive layer has an index of refraction mismatch of at least 0.75 to the absorber layer.
2 . The tandem photovoltaic device of claim 1 , wherein the thin film semiconductor is a II-VI material, I-III-VI material, or a perovskite.
3 . The tandem photovoltaic device of claim 1 , wherein the conductive layer comprises a transparent conductive oxide.
4 . The tandem photovoltaic device of claim 3 , wherein the transparent conductive oxide is cadmium tin oxide.
5 . The tandem photovoltaic device of claim 3 , wherein the transparent conductive oxide is cadmium oxide.
6 . The tandem photovoltaic device of claim 1 , wherein the conductive layer comprises a plurality of layers, wherein the plurality of layers includes: a layer of cadmium tin oxide, and a layer of cadmium oxide.
7 . The tandem photovoltaic device of claim 1 , wherein the conductive layer comprises a transparent tunnel junction.
8 . The tandem photovoltaic device of claim 1 , comprising a back contact layer over the surface of the absorber layer and between the absorber layer and the conductive layer.
9 . The tandem photovoltaic device of claim 8 , wherein the back contact layer comprises ZnTe.
10 . The tandem photovoltaic device of claim 1 , wherein the root mean square average of the surface roughness of the absorber layer is less than 170 nanometers.
11 . The tandem photovoltaic device of claim 1 , wherein the root mean square average of the surface roughness of the absorber layer is less than 160 nanometers, less than 150 nanometers, or less than 120 nanometers.
12 . The tandem photovoltaic device of claim 1 , wherein the root mean square average of the surface of the absorber layer is less than 100 nanometers.
13 . The tandem photovoltaic device of claim 1 , wherein the root mean square average of the surface roughness of the absorber layer is from 175 nanometers to 200 nanometers.
14 . The tandem photovoltaic device of claim 1 , comprising a transparent layer over the conductive layer, wherein the transparent layer comprises titanium dioxide.
15 . The tandem photovoltaic device of claim 1 , comprising a transparent layer over the conductive layer, wherein the transparent layer and the conductive layer have an index of refraction mismatch of less than 0.2.
16 . The tandem photovoltaic device of claim 1 , comprising a transparent layer over the conductive layer, wherein the transparent layer has an index of refraction from 1.7 to 2.3.
17 . The tandem photovoltaic device of claim 1 , comprising a transparent layer over the conductive layer, wherein the transparent layer has a graded index of refraction.
18 . The tandem photovoltaic device of claim 1 , comprising a transparent layer over the conductive layer, wherein the transparent layer has a thickness in a range of 100 nm to 1000 nm.
19 . (canceled)
20 . A tandem photovoltaic device comprising:
a first submodule; and
a second submodule over the first submodule, wherein the first submodule comprises an interface between the first submodule and the second submodule, wherein:
the interface permits a portion of light to pass therethrough,
the interface optically couples the first submodule and the second submodule, and the interface comprises:
an absorber layer formed from a thin film semiconductor, the absorber layer having a surface having a roughness with a root mean square average less than 170 nanometers; and
a conductive layer over the surface of the absorber layer, wherein the conductive layer has an index of refraction mismatch of at least 0.75 to the absorber layer.
21 - 33 . (canceled)
34 . A method of making a tandem photovoltaic device, comprising:
providing a first submodule and a second submodule; and
forming an interface between the first submodule and the second submodule, wherein the interface permits a portion of light to pass therethrough, the interface optically coupling the first submodule and the second submodule, and optically coupling the first submodule and the second submodule includes reducing reflection of the portion of light.
35 - 62 . (canceled)