Hybrid Bonding With Micro-Light Emitting Diode (LED) Devices

1 . A micro-light emitting diode (uLED) device comprising:

a source wafer comprising: a uLED die including a plurality of pixels each having sidewalls and comprising a mesa of semiconductor layers including an active region; a plurality of die n-contacts in electrical communication with an n-type layer of the mesa; a plurality of die p-contacts in communication with a p-type layer of the mesa; and a die dielectric material isolating the die n-contacts and the die p-contacts;

a target wafer comprising: a target substrate on which a plurality of wafer n-contacts, a plurality of wafer p-contacts, and a wafer dielectric material are located, the wafer n-contacts directly bonded to the plurality of die n-contacts; the wafer p-contacts directly bonded to the die p-contacts; and the wafer dielectric material directly bonded to the die dielectric material; the wafer dielectric material isolating the wafer n-contacts and the wafer p-contacts.

2 . The uLED device of claim 1 , wherein a width of each of the wafer n-contacts is 95% to 100% of a width of each of the die n-contacts at each location where they are directly bonded; and/or a width of each of the wafer p-contacts is 95% to 100% of a width of each of the die p-contacts at each location where they are directly bonded; and/or a width of the wafer dielectric material is 95% to 100% of a width of the die dielectric material at each location where they are directly bonded.

3 . The uLED device of claim 1 , wherein the die n-contacts, the wafer n-contacts, the die p-contacts and the wafer p-contacts comprise a metal.

4 . The uLED device of claim 1 , wherein the die n-contacts, the wafer n-contacts, the die p-contacts and the wafer p-contacts comprise the same metal.

5 . The uLED device of claim 1 , wherein the die n-contacts, the wafer n-contacts, the die p-contacts and the wafer p-contacts comprise one or more of: copper (Cu), aluminum (Al), nickel (Ni), titanium (Ti), titanium-tungsten (TiW), silver (Ag), gold (Au), platinum (Pt), and palladium (Pd).

6 . The uLED device of claim 1 , wherein the die dielectric material and the wafer dielectric material comprise the same dielectric material.

7 . The uLED device of claim 1 , wherein the die dielectric material and the wafer dielectric material comprise one or more of: silicon oxide (SiO), silicon dioxide (SiO2), silicon nitride (SiN), silicon carbide (SiC), aluminum oxide (Al2O3), and aluminum nitride (AlN).

8 . The uLED device of claim 1 , wherein the uLED die further comprises a die substrate in contact with the semiconductor layers including the active region.

9 . The uLED device of claim 8 , wherein the die substrate comprises a material selected from the group consisting of: a sapphire, silicon carbide, and III-nitride and/or the target substrate comprises a substrate material selected from the group consisting of: ceramic, silicon, aluminum, a sapphire, silicon carbide, and III-nitride.

10 . (canceled)

11 . The uLED device of claim 1 further comprising an etch stop layer on the target substrate below the wafer n-contacts, the wafer p-contacts, and the wafer dielectric material.

12 . The uLED device of claim 1 , wherein the wafer n-contacts are directly bonded to the plurality of die n-contacts over respective n-contact bond areas and the wafer p-contacts are directly bonded to the die p-contacts over respective p-contact bond areas, and wherein diameters of the n-contact bond areas and the p-contact bond areas have a diameter in a range of 0.5 micrometers to less than or equal to 30 micrometers.

13 . The uLED device of claim 1 , wherein the wafer n-contacts are directly bonded to the plurality of die n-contacts over respective n-contact bond areas and the wafer p-contacts are directly bonded to the die p-contacts over respective p-contact bond areas, and wherein a pitch between centers of all of the n-contact bond areas and the p-contact bond areas is in a range of greater than or equal to 1 micrometers to less than or equal to 60 micrometers.

14 . The uLED device of claim 1 , wherein the die n-contacts and the die p-contacts are connected in series to the wafer n-contacts and the wafer p-contacts.

15 . A method of manufacturing a micro-light emitting diode (uLED) device comprising:

preparing a target wafer comprising: a target substrate on which a plurality of wafer n-contacts, a plurality of wafer p-contacts, and a wafer dielectric material are located by:

depositing an etch stop layer on the target substrate;

depositing a primary dielectric material on the target substrate;

preparing a dielectric material mask on the target substrate, etching the primary dielectric material, and removing the dielectric material mask;

preparing a primary metal contact layer on the target substrate;

planarizing a preliminary surface of the target substrate;

depositing a secondary dielectric material layer on the target substrate, preparing a contact mask on the target substrate, etching the secondary dielectric material, and removing the contact mask;

preparing a secondary metal contact layer on the target substrate; and

planarizing a second surface of the target substrate to form the plurality of wafer n-contacts and the plurality of wafer p-contacts, which are isolated by the wafer dielectric material;

bonding a source wafer to the target wafer, the source wafer comprising: a uLED die including a plurality of pixels each having sidewalls and comprising a mesa of semiconductor layers including an active region; a plurality of die n-contacts in electrical communication with an n-type layer of the mesa; a plurality of die p-contacts in communication with a p-type layer of the mesa; and a die dielectric material isolating the die n-contacts and the die p-contacts, and

upon bonding, the plurality of the wafer n-contacts are directly bonded to the plurality of die n-contacts; the plurality of wafer p-contacts are directly bonded to the die p-contacts; and the wafer dielectric material directly is bonded to the die dielectric material.

16 . The method of claim 15 , wherein the wafer n-contacts are directly bonded to the plurality of die n-contacts over respective n-contact bond areas and the wafer p-contacts are directly bonded to the die p-contacts over respective p-contact bond areas, and wherein diameters of the n-contact bond areas and the p-contact bond areas have a diameter in a range of 0.5 micrometers to less than or equal to 30 micrometers, and/or wherein a pitch between centers of all of the n-contact bond areas and the p-contact bond areas is in a range of greater than or equal to 1 micrometers to less than or equal to 60 micrometers.

17 . (canceled)

18 . The method of claim 15 , wherein the preparing of the primary metal contact layer and the preparing of the secondary metal contact layer independently comprise: depositing a seed layer and conducting metal plating on the seed layer.

19 . The method of claim 15 , wherein the planarizing of the preliminary surface of the target substrate and of the second surface of the target substrate independently comprise a planarity of less than or equal to 5 Å, and/or the planarizing of the preliminary surface of the target substrate and of the second surface of the target substrate independently comprise a chemical mechanical polishing (CMP) process.

20 . (canceled)

21 . The method of claim 15 , further comprising a cleaning process after one or more both of the planarizing of the preliminary surface of the target substrate and of the second surface of the target substrate.

22 . The method of claim 15 , wherein upon the bonding of uLED die to the target wafer, the die n-contacts and the die p-contacts are connected in series to the wafer n-contacts and the wafer p-contacts.

23 . A source wafer comprising: a uLED die including:

a plurality of pixels each having sidewalls and comprising a mesa of semiconductor layers including an active region;

a plurality of die n-contacts in electrical communication with an n-type layer of the mesa;

a plurality of die p-contacts in communication with a p-type layer of the mesa; and

a die dielectric material isolating the die n-contacts and the die p-contacts;

each of the die n-contacts and the die p-contacts having a contact opening having a diameter “d” and a center “c”, and a pitch “p” between adjacent centers of each of the die n-contacts and the die p-contacts, the “d” being in a range of greater than or equal to 0.5 micrometers and less than or equal to 30 micrometers, and the “p” being in a of greater than or equal to 1 micrometer and less than or equal to 60 micrometers.