SEMICONDUCTOR STRUCTURE
A semiconductor structure includes a first semiconductor structure having a first conductivity type, a second semiconductor structure having a second conductivity type, an active structure disposed between the first semiconductor structure and the second semiconductor structure, a stress release structure disposed between the first semiconductor structure and the active structure, and an indium-containing layer disposed between the stress release structure and the first semiconductor structure. An indium content of the indium-containing layer is greater than an indium content of the stress release structure.
1 . A semiconductor structure, comprising:
a first semiconductor structure comprising a first conductivity type;
a second semiconductor structure comprising a second conductivity type;
an active structure between the first semiconductor structure and the second semiconductor structure;
a stress release structure disposed between the first semiconductor structure and the active structure; and
an indium-containing layer disposed between the stress release structure and the first semiconductor structure;
wherein an indium content of the indium-containing layer is greater than that of the stress release structure.
2 . The semiconductor structure of claim 1 , wherein a material of the indium-containing layer comprises In x1 Ga 1−x1 N, wherein 0<x1≤0.2.
3 . The semiconductor structure of claim 1 , wherein a material of the indium-containing layer comprises In x2 Al 1−x2 N, wherein 0<x2≤0.15.
4 . The semiconductor structure of claim 1 , wherein a thickness of the indium-containing layer is between 0.25 nm and 20 nm.
5 . The semiconductor structure of claim 1 , wherein the first semiconductor structure comprises a contact layer and a transition layer disposed between the contact layer and the stress release structure.
6 . The semiconductor structure of claim 5 , wherein the indium-containing layer is disposed between the stress release structure and the transition layer.
7 . The semiconductor structure of claim 5 , wherein the indium-containing layer is disposed between the transition layer and the contact layer.
8 . The semiconductor structure of claim 5 , wherein the first semiconductor structure further comprises an intermediate layer disposed between the contact layer and the transition layer.
9 . The semiconductor structure of claim 8 , wherein the intermediate layer and the contact layer comprise a first-conductivity-type dopant, and a concentration of the first-conductivity-type dopant in the contact layer is greater than that in the intermediate layer.
10 . The semiconductor structure of claim 5 , wherein the transition layer comprises a first group III-V semiconductor sub-layer disposed on the contact layer and a second group III-V semiconductor sub-layer disposed on the first group III-V semiconductor sub-layer.
11 . The semiconductor structure of claim 10 , wherein the first group III-V semiconductor sub-layer and the second group III-V semiconductor sub-layer respectively comprises a first-conductivity-type dopant.
12 . The semiconductor structure of claim 11 , wherein a concentration of the first-conductivity-type dopant in the second group III-V semiconductor sub-layer is greater than that in the first group III-V semiconductor sub-layer.
13 . The semiconductor structure of claim 12 , wherein the indium-containing layer is disposed between the first group III-V semiconductor sub-layer and the second group III-V semiconductor sub-layer.
14 . The semiconductor structure of claim 1 , wherein the stress release structure comprises a first stress release layer on the indium-containing layer.
15 . The semiconductor structure of claim 14 , wherein the stress release structure further comprises a second stress release layer between the first stress release layer and the indium-containing layer.
16 . The semiconductor structure of claim 15 , wherein an indium content of the second stress release layer is greater than that of the first stress release layer.
17 . The semiconductor structure of claim 15 , wherein the first stress release layer and/or the second stress release layer comprise a plurality of sub-layers.
18 . The semiconductor structure of claim 17 , wherein part of the plurality of sublayers of the first stress release layer and/or part of the plurality of sublayers of the second stress release layer comprise indium.
19 . The semiconductor structure of claim 15 , wherein the second stress release layer comprises a plurality of sub-layers, and the second stress release layer comprises the indium-containing layer.
20 . The semiconductor structure of claim 1 , wherein the indium content of the indium-containing layer is 2 to 3 times that of the stress release structure.