IP Library Patent Application 18739625
Patent Application
App. No. 18/739,625

PHOTON-PHOTON RESONANCE PCSEL FOR HIGH-SPEED APPLICATIONS

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Quick Facts
Patent No.
US None
App. No.
18/739,625
Abstract

This disclosure describes a photon-photon resonance photonic crystal surface-emitting laser (PPR PCSEL) operable in high-speed applications. The PPR PCSEL comprises a first photonics crystal section and a second photonics crystal section located at along the same fabrication layer. The first photonics crystal section is operable to out-couple light vertically. The second photonics crystal section is operable to produce a photon-photon resonance. The etched pattern in the first photonics crystal section is different than the etched pattern in the second photonics crystal section.

Claims (42)

1 . A laser device, comprising:

a first photonics crystal section operable to out-couple light in a vertical direction; and

a second photonics crystal section operable to produce a photon-photon resonance in a horizontal direction.

2 . The laser device of claim 1 , wherein:

the first photonics crystal section comprises a first etched pattern, and

the second photonics crystal section comprises a second etched pattern that is different than the first etched pattern.

3 . The laser device of claim 1 , wherein:

the first photonics crystal section and the second photonics crystal section are located at a same fabrication layer.

4 . The laser device of claim 1 , wherein the laser device comprises:

an epitaxy layer operably coupled to the first photonics crystal section and the second photonics crystal section.

5 . The laser device of claim 1 , wherein the laser device is a photon-photon resonance photonic crystal surface-emitting laser (PPR PCSEL).

6 . The laser device of claim 1 , wherein the laser device is a bottom-emitting laser.

7 . The laser device of claim 1 , wherein the laser device comprises:

an active layer operably coupled to the first photonics crystal section and the second photonics crystal section.

8 . The laser device of claim 7 , wherein the laser device comprises:

an epitaxy layer operably coupled to the active layer.

9 . The laser device of claim 8 , wherein the laser device comprises:

a reflector operably coupled to the epitaxy layer.

10 . The laser device of claim 1 , wherein the laser device comprises:

a plurality of second photonics crystal sections, wherein:

each second photonics crystal section is operable to produce a photon-photon resonance in a horizontal direction.

11 . A method of fabricating a laser device, comprising:

fabricating a first photonics crystal section operable to out-couple light in a vertical direction; and

fabricating a second photonics crystal section, operably coupled to the first photonics crystal section, operable to produce a photon-photon resonance in a horizontal direction.

12 . The method of claim 11 , wherein:

etching the first photonics crystal section according to a first etched pattern, and

etching the second photonics crystal section according to a second etched pattern that is different than the first etched pattern.

13 . The method of claim 11 , wherein:

the first photonics crystal section and the second photonics crystal section are located at a same fabrication layer.

14 . The method of claim 11 , wherein the method comprises:

fabricating an epitaxy layer prior to fabricating the first photonics crystal section and the second photonics crystal section.

15 . The method of claim 11 , wherein the laser device is a photon-photon resonance photonic crystal surface-emitting laser (PPR PCSEL).

16 . The method of claim 11 , wherein the laser device is a bottom-emitting laser.

17 . The method of claim 11 , wherein the method comprises:

fabricating an active layer atop the first photonics crystal section and the second photonics crystal section.

18 . The method of claim 17 , wherein the method comprises:

fabricating an epitaxy layer atop the active layer.

19 . The method of claim 18 , wherein the method comprises:

fabricating a reflector operably atop the epitaxy layer.

20 . The method of claim 11 , wherein the method comprises:

fabricating a plurality of second photonics crystal sections, wherein:

each second photonics crystal section is operable to produce a photon-photon resonance in a horizontal direction.

Assignments (1)
SECURITY INTEREST Recorded Oct 6, 2025
From: II-VI DELAWARE, INC.; COHERENT, INC.
To: JPMORGAN CHASE BANK, N.A., AS COLLATERAL AGENT
Reel/Frame 072853/0806 →