HIGHLY THERMALLY CONDUCTIVE HYBRID THERMAL INTERFACE MATERIAL

1 . A thermal interface material, comprising:

a diamond-containing filler;

a silicone oil; and

a plurality of additives.

2 . The thermal interface material of claim 1 , wherein the plurality of additives comprise:

a dispersant;

a crosslinker;

a catalyst;

an inhibitor;

a release agent;

a pigment; and

a coupling agent.

3 . The thermal interface material of claim 1 , wherein the diamond-containing filler comprises from 93 wt. % to 98 wt. % of the total weight of the thermal interface material.

4 . The thermal interface material of claim 1 , wherein the diamond-containing filler comprises:

zinc oxide;

aluminum oxide (D50=2-5 μm);

aluminum oxide (D50=25-45 μm); and

diamond (D50=110-130 μm).

5 . The thermal interface material of claim 4 , wherein:

zinc oxide comprises from 0.2 wt. % to 2.5 wt. % of the total weight of the diamond-containing filler;

aluminum oxide (D50=2-5 μm) comprises from 5 wt. % to 20 wt. % of the total weight of the blended diamond filler;

aluminum oxide (D50=25-45 μm) comprises from 30 wt. % to 65 wt. % of the total weight of the blended diamond filler; and

diamond (D50=110-130 μm) comprises from 5 wt. % to 15 wt. % of the total weight of the blended diamond filler.

6 . The thermal interface material of claim 1 , wherein the blended diamond filler comprises:

zinc oxide;

aluminum oxide (D50=2-5 μm);

aluminum oxide (D50=10-15 μm);

aluminum nitride; and

diamond (D50=80-100 μm).

7 . The thermal interface material of claim 6 , wherein:

the zinc oxide comprises from 0.2 wt. % to 2.5 wt. % of the total weight of the blended diamond filler;

the aluminum oxide (D50=2-5 μm) comprises from 10 wt. % to 30 wt. % of the total weight of the blended diamond filler;

the aluminum oxide (D50=10-15 μm) comprises from 5 wt. % to 15 wt. % of the total weight of the blended diamond filler;

the aluminum nitride comprises from 40 wt. % to 65 wt. % of the total weight of the blended diamond filler; and

the diamond (D50=80-100 μm) comprises from 2 wt. % to 10 wt. % of the total weight of the blended diamond filler.

8 . The thermal interface material of claim 1 , wherein thermal interface material has a thermal conductivity from 10 W/(m.k.) to 13 W/(m.k.), as determined per ASTM D5470.

9 . The thermal interface material of claim 1 , wherein the silicone oil comprises 2.5 wt. % to 4.5 wt. % of the total weight of the thermal interface material.

10 . The thermal interface material of claim 2 , wherein the pigment comprises 0.01 wt. % to 0.10 wt. % of the total weight of the thermal interface material.

11 . A method for applying a thermal interface material to a substrate, comprising:

combining each of a conductive filler, a silicone oil, and a plurality of additives to form the thermal interface material;

wherein the conductive filler comprises a blended diamond filler; and

applying the thermal interface material to a metal substrate.

12 . The method of claim 11 , wherein the blended diamond filler comprises zinc oxide, aluminum oxide (D50=2-5 μm), aluminum oxide (D50=25-45 μm), and diamond (D50=110-130 μm).

13 . The method of claim 11 , wherein the blended diamond filler comprises zinc oxide, aluminum oxide (D50=2-5 μm), aluminum oxide (D50=10-15 μm), aluminum nitride, and diamond (D50=80-100 μm).

14 . An electronic component comprising:

a heat sink;

an electronic chip; and

a thermal interface material positioned between the heat sink and the electronic chip, wherein the thermal interface material comprises:

a conductive filler

wherein the conductive filler comprises a blended diamond filler;

silicone oil; and

a plurality of additives.

15 . The electronic component of claim 14 , wherein the plurality of additives comprises:

a dispersant;

a crosslinker;

a catalyst;

an inhibitor;

a release agent;

a pigment; and

a coupling agent.

16 . The electronic component of claim 14 , wherein the thermal interface material has a thermal conductivity from 10 W/(m.k.) to 13 W/(m.k.), as determined per ASTM D5470.

17 . The electronic component of claim 14 , wherein the blended diamond filler comprises:

zinc oxide; and

aluminum oxide (D50=2-5 μm);

aluminum oxide (D50=25-45 μm); and

diamond (D50=110-130 μm).

18 . The electronic component of claim 17 , wherein:

zinc oxide comprises from 0.2 wt. % to 2.5 wt. % of the total weight of the blended diamond filler;

aluminum oxide (D50=2-5 μm) comprises from 5 wt. % to 20 wt. % of the total weight of the blended diamond filler;

aluminum oxide (D50=25-45 μm) comprises from 30 wt. % to 65 wt. % of the total weight of the blended diamond filler; and

diamond (D50=110-130 μm) comprises from 5 wt. % to 15 wt. % of the total weight of the blended diamond filler.

19 . The electronic component of claim 14 , wherein the blended diamond filler comprises:

zinc oxide; and

aluminum oxide (D50=2-5 μm);

aluminum oxide (D50=10-15 μm);

aluminum nitride; and

diamond (D50=80-100 μm).

20 . The electronic component of claim 19 , wherein:

zinc oxide comprises from 0.2 wt. % to 2.5 wt. % of the total weight of the blended diamond filler;

aluminum oxide (D50=2-5 μm) comprises from 10 wt. % to 30 wt. % of the total weight of the blended diamond filler;

aluminum oxide (D50=10-15 μm) comprises from 5 wt. % to 15 wt. % of the total weight of the blended diamond filler;

aluminum nitride comprises from 40 wt. % to 65 wt. % of the total weight of the blended diamond filler; and

diamond (D50=80-100 μm) comprises from 2 wt. % to 10 wt. % of the total weight of the blended diamond filler.