SILICON NEGATIVE ELECTRODE MATERIAL, AND SECONDARY BATTERY, BATTERY MODULE, BATTERY PACK, AND ELECTRICAL APPARATUS COMPRISING SAME
Provided are a silicon negative electrode material, which is characterized by comprising silicon particles and carbon nanotubes grown on the surface of the silicon particles, wherein the carbon nanotubes comprise fluffy carbon nanotubes and intertwined filamentary carbon nanotubes, and the silicon particles are wrapped by the fluffy carbon nanotubes and the filamentary carbon nanotubes. Further provided is a method for preparing the silicon negative electrode material.
1 . A silicon negative electrode material, comprising silicon particles and carbon nanotubes grown on a surface of the silicon particles, wherein
the carbon nanotubes comprise fluffy carbon nanotubes and intertwined filamentary carbon nanotubes, and the silicon particles are wrapped by the fluffy carbon nanotubes and the filamentary carbon nanotubes.
2 . The silicon negative electrode material of claim 1 , wherein an outer surface of the silicon particles has defects, the defects containing catalyst particles such that roots of the carbon nanotubes grow perpendicular to the surface of the silicon particles.
3 . The silicon negative electrode material of claim 1 , wherein
the fluffy carbon nanotubes have a length of 0.5-2 μm and the filamentary carbon nanotubes have a length of 5-100 μm.
4 . The silicon negative electrode material of claim 1 , wherein
the carbon nanotubes have a content of 3 wt % to 6.5 wt % based on a total weight of the silicon negative electrode material.
5 . The silicon negative electrode material of claim 2 , wherein the catalyst particles have a content of 0.5%-2% based on the total weight of the silicon negative electrode material; optionally, the silicon particles have a volume average particle size D v50 of 4 μm-7 μm, and the catalyst particles have a volume average particle size D v50 of 2 nm-15 nm.
6 . The silicon negative electrode material of claim 1 , wherein the silicon negative electrode material has a specific surface area of 5 m 2 /g-8 m 2 /g.
7 . The silicon negative electrode material of claim 1 , wherein the silicon particles are silicon oxide particles, silicon-carbon particles or elemental silicon particles; optionally, the silicon particles are prelithiated silicon oxide particles, silicon-carbon particles or elemental silicon particles.
8 . The silicon negative electrode material of claim 2 , wherein the catalyst particles are selected from at least one of elemental iron, elemental cobalt, elemental nickel, elemental copper and elemental zinc.
9 . A method for preparing a silicon negative electrode material, comprising the steps of:
1) heating silicon particles in an acidic solution to etch defects on a surface of the silicon particles, followed by centrifugal cleaning;
2) fully mixing the silicon particles obtained in step 1) with a precursor solution for producing catalyst particles, followed by drying, so that a precursor is deposited in the defects of a surface of silicon negative electrode particles;
3) placing powder obtained in step 2) in a high-temperature furnace to perform a reduction reaction under a protective atmosphere of H 2 /Ar, so that the precursor is reduced into catalyst particles, wherein the catalyst particles are at least one of elemental iron, elemental cobalt, elemental nickel, elemental copper and elemental zinc; and
4) introducing a gaseous carbon source into the high-temperature furnace to perform a high-temperature reaction to obtain the silicon negative electrode material finally; wherein
the silicon negative electrode material comprises silicon particles and carbon nanotubes grown on the surface of the silicon particles, the carbon nanotubes comprise fluffy carbon nanotubes and intertwined filamentary carbon nanotubes, and the silicon particles are wrapped by the fluffy carbon nanotubes and the filamentary carbon nanotubes.
10 . The method of claim 9 , wherein step 3) and step 4) are allowed to be performed simultaneously.
11 . The method of claim 9 , wherein in step 1), the acidic solution is an aqueous solution of hydrogen fluoride with a concentration of 1 mol/L-10 mol/L; etching temperature is 50° C.-90° C., preferably 80-90° C.; and etching time is 50 min-150 min, preferably 70 min-120 min.
12 . The method of claim 9 , wherein in step 2), the precursor solution for producing catalyst particles is an aqueous solution of iron nitrate, an aqueous solution of nickel nitrate or an aqueous solution of cobalt nitrate with a concentration of 0.1-3 mol/L.
13 . The method of claim 9 , wherein in step 2), the method for drying comprises spray drying, and drying with stirring; wherein the drying is carried out until moisture content of the obtained powder is less than 1 wt % based on the total weight of the obtained powder.
14 . The method of claim 9 , wherein in step 4), high temperature is 580° C.-900° C., preferably 800-850° C., reaction time is 20 min-50 min, and the gaseous carbon source is methane, acetylene or carbon dioxide.
15 . A secondary battery, comprising the silicon negative electrode material of claim 1 or the silicon negative electrode material prepared by the method for preparing a silicon negative electrode material of claim 9 .
16 . A battery module, comprising the secondary battery of claim 15 .
17 . A battery pack, comprising the battery module of claim 16 .
18 . An electrical apparatus, comprising at least one of the secondary battery of claim 15 , the battery module of claim 16 , or the battery pack of claim 17 .